• Proceedings of the Korea Crystallographic Association Conference
• /
• 2002.11a
• /
• pp.57-57
• /
• 2002

100 nm 이하의 입자의 크기와 모양을 정확하게 측정할 수 있는 기술개발을 위하여 투과형 전자현미경(TEM)으로 100 nm 지름의 폴리스티렌구의 평균지름을 측정하였다. 기기 표시 배율과 엣지결정불확도에 의한 크기측정오차를 최소화하기 위하여, 지름이 정확히 알려진 300 nm 입자를 내부 기준자로 쓰기 위하여 100 nm 입자와 섞었다. 100 nm 입자들의 지름은 동일한 TEM 필름상의 300 nm 입자와의 비교를 통하여 얻어졌다. 전자빔에 의한 입자축소효과의 보정을 위하여, 가속전압, 빔세기, 그리고 노출시간이 축소량에 미치는 정량적 관계를 조사하고 분석하였다. 그러한 분석과 몇가지 데이터 처리과정에 기초하여, 100 nm 폴리스티렌구의 평균지름을 95 ％ 신뢰수준에서 확장불확도 2 ％로 결정하였다. 측정값은 동일한 쌤플에 대하여, 다른 방법을 사용하는 다른 실험실들과의 결과와도 일치하고 있다.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.27 no.12
• /
• pp.1766-1771
• /
• 2003

House made differential mobility analyzer(DMA) is calibrated with NIST SRM 1691(300 nm PSL). Then the particle size and uncertainty for differential mobility analyzer(DMA) using the NIST SRM 1963(100 nm PSL). In result, calibration of prototype DMA is measured using 300 nm NIST SRM 1691, then sheath air flow was corrected 126.67 ㎤/s. Corrected sheath air flow is used in uncertainty measurement of prototype DMA. Uncertainty analysis is performed using NIST SRM 1963(100 nm PSL). The experimental result shows that NIST SRM 1963 is measured as 102.17 nm with a type A uncertainty of 0.33 nm.

• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.707-710
• /
• 2003

10nm 이하의 두께를 갖는 얇은 SOI 층 위에서 우수한 동작 특성을 보이는 Fully-Depleted SOI nMOSFET 을 제작하였다. 게이트의 길이가 큰 경우에는 SOI 층이 얇지 않아도 좋은 특성을 보이지만, 게이트 길이가 100nm 이하에서는 Short Channel Effect 에 의한 특성 열화 때문에 SOI thin body 의 두께가 게이트 길이에 따라 같이 얇아져야 한다. [1] 100nm 게이트 길이 SOI-NMOSFET에서 10nm 이하 body 두께에 따라 Vth는 조금 상승했고, Subthreshold slope은 조금 개선되는 특성을 보였다. 또한, 45nm 게이트 길이와 3nm 로 추정되는 body 두께를 갖는 nMOSFET 에서 우수한 I-V 동작 특성을 얻었다.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.7 no.3
• /
• pp.332-337
• /
• 2006

We prepared 100 nm-thick CoNi composite silicide on a 70 nm-thick polysilicon substrate. Composite silicide laye.s were formed by rapid thermal annealing(RTA) at the temperatures of $700^{\circ}C,\;900^{\circ}C,\;1000^{\circ}C$ for 40 seconds. A Focused ion beam (FIB) was used to make nano-patterns with the operation range of 30 kV and $1{\sim}100$ pA. We investigated the change of thickness, line width, and the slope angle of the silicide patterns by FIB. More easily made with the FIB process than with the conventional polycide process. We successfully fabricated sub-100nm etched patterns with FIB condition of 30kv-30pA. Our result implies that we may integrate nano patterns with our newly proposed CoNi composite silicides.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.180-183
• /
• 2000

Beginning with a brief introduction on near 100 nm or below CMOS devices, this paper addresses novel devices for future sub-100 nm CMOS. First, key issues such as gate materials, gate dielectric, source/drain, and channel in Si bulk CMOS devices are considered. CMOS devices with different channel doping and structure are introduced by explaining a figure of merit. Finally, novel device structures such as SOI, SiGe, and double-gate devices will be discussed for possible candidates for sub-100 nm CMOS.

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2002.11a
• /
• pp.56-56
• /
• 2002

100 nm 이하의 구형입자를 짧은 시간에 정확히 측정할 수 있는 기술을 개발하기 위하여 하전된 입자를 전기장내에 투입한 후 이의 이동도를 측정하였다. 100 nm의 표준 입자를 초순수에 분산시킨 후 Collison atomizer를 이용하여 입자를 공기중에 분산시켰다. 이후 입자를 건조시킨 후 입자의 분산과정에서 하전된 입자를 방사능 전기 중화장치를 통과시켜 입자의 하전을 기저상태로 만들었다. 이 후 입자를 전기 이동도 측정장치에 투입한 후 전기 이동도 측정장치의 유량과 전압을 조절하면서 입자의 크기를 측정하였다.

• Journal of Korean Society for Atmospheric Environment
• /
• v.9 no.2
• /
• pp.140-146
• /
• 1993

CoMo, NiMo/ZSM-5 catalysts were prepared at Si/Al ratios of 100, 200 and characterized by TGA, XRD and SEM. Simultaneous hydrocracking of n-heptane and hydrodesulfurization of DBT were studied over these catalysts at the ranges of temparatures between 400$^\circ$C and 500$^\circ$C, pressure of 30 $\times 10^5$ Pa and contact time of 0.02g cat. hr/ml feed in a fixed bed flow reactor. It was shown that the hydrocracking activity of n-heptane increased in the order of NM 100, CM 100, NM 200 and CM 200 catalysts. It was also shown that the Hydrodesulfurization activity of DBT increased in the order of CM 200, NM 200, CM 100 and NM 100 catalysts and these results were thought to be that the increase of acidity of catalysts might increase hydrocracking activity of these catalysts but deactive those simultaneously. In this study it was shown that CM 100 and NM 200 were active catalysts in simultaneous hydrodesulfurization of DBT and hydrocracking of n-heptane reactions.

• Journal of the Korean Vacuum Society
• /
• v.15 no.6
• /
• pp.637-641
• /
• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.1532-1536
• /
• 2007

A plastic substrate with tiny rectangular pillars less than 100nm is injection molded to study pattern replication in injection molding. The size of the substrate is 50mm ${\times}$ 50mm and 1mm thick. The substrate has 9 patterned areas of which size is 2mm ${\times}$ 2mm respectively. The lengths of the pillars are 50nm, 100nm, 150nm and 200nm and the width and height are 50nm and about 100nm respectively. A pattern master is fabricated by e-beam writing using positive PR(photo resist) and then a nickel stamper replicated from the PR master by nickel electro-plating. Cr is deposited on the PR pattern master before nickel electro-plating as a conducting layer. Using this nickel stamper, several injection molding experiments are done to investigate effects of the injection molding parameters such as mold temperature, injection rate, packing pressure or pattern location on the replication of the patterns under 100nm.

• Korean Journal of Optics and Photonics
• /
• v.21 no.4
• /
• pp.175-178
• /
• 2010

A transmission type color filter based on a thin film Ag-$SiO_2$-Ag etalon was proposed and realized in a quartz substrate. The device could acquire infrared suppressed transmission and wide effective area compared to costly e-beam lithography and laser interference lithography. The FDTD method was introduced to take into account the effect of the dispersion characteristics of the silver metal and the thickness thereof. Three different color filters were devised: The cavity length for the red, green and blue filters were 160 nm, 130 nm, and 100 nm respectively, with the metal layer unchanged at 25 nm. The observed center wavelengths were measured at 650 nm, 555 nm, and 480 nm for the red, green, and blue devices; the corresponding bandwidths were about 120 nm, 100 nm, and 120 nm; and the peak transmission for all was ~60%. Finally the relative transmission was measured to decline with the angle of the incident beam with the rate of 1%/degree.