• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.75-75
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• 2010

단일벽 탄소나노튜브(SWNT)는 뛰어난 물리적 성질과 화학적 안정성을 가지고 있어서 다양한 분야의 응용이 기대되어 폭넓은 연구가 진행 되고 있다. 특히 SWNT의 전기적 및 기계적 특성들은 SWNT의 직경 및 뒤틀림도(chirality)에 의해 크게 좌우되기 때문에, 합성하는 단계에서 직경 또는 chirality를 제어에 관한 많은 이론적 연구가 진행되어 왔으며, 최근에는 초기 SWNT의 핵생성 단계에서의 촉매의 거동 및 상호 연관성 등에 관한 실험적인 연구결과들이 속속 보고되고 있는 실정이다. 하지만, 아직도 이에 관한 더욱 다양하고 활발한 연구 접근 및 결과들이 필요한 시점이다. 상기 배경을 바탕으로 본 연구에서는 균일한 직경을 갖는 SWNT의 합성을 위한 기초연구로서 SWNT의 직경과 촉매나노입자의 크기의 상호 연관성에 대해 체계적으로 조사하였다. 우선 SWNT합성을 위한 촉매나노입자를 얻기 위해 페리틴(ferritin)용액의 농도 및 스핀코팅 조건을 변화시킴으로써 기판 위에 분산농도를 제어한 후, 대기 열처리를 통하여 촉매나노입자의 농도를 제어하였다. 나노입자의 평균직경은 4 nm 정도로 비교적 균일하였으며, 고농도의 촉매입자는 SWNT의 다발화(bundling)를 유발하였다. 따라서, SWNT와 나노입자 직경의 상호연관성을 조사하기 위해서는 단분산(monodispersed) 된 나노입자를 이용하였으며, 아르곤 분위기에서 추가적으로 고온($900^{\circ}C$) 열처리를 실시함으로써 나노입자의 크기감소를 도모하였다. 실험결과, 열처리 시간의 증가에 따라 입자크기가 감소함을 확인하였으며, 이는 나노입자의 증발에 의한 것으로 예상된다. 다음으로는 열처리를 통하여 직경이 제어된 나노입자를 이용하여 SWNT를 합성한 후 SWNT와 촉매크기 사이의 크기 관계를 조사하였다. SWNT의 합성은 메탄을 원료가스로 열화학증기증착법을 이용하였고, 합성기판으로는 산화실리콘웨이퍼와 퀄츠기판을 이용하였다. 성장한 SWNT의 직경은 AFM을 이용하여 측정하였으며, 퀄츠기판에 수평배향 성장시킨 SWNT를 3차원 구조의 기판으로 전사(transfer)하여, 라만분석이 용이하도록 하였다.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.310-315
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• 1993

The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

• Applied Chemistry for Engineering
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• v.32 no.6
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• pp.700-705
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• 2021

A portable and disposable pH sensor based on Ti wire was successfully developed for monitoring hydronium ion concentrations. A sensing electrode was prepared by electrochemically depositing iridium oxide onto a Ti wire, while a reference electrode was fabricated by coating Ag/AgCl ink on a Ti wire. Combining the two electrodes in the pH sensor enabled the collection of open circuit potential signals when the sensor was immersed in solutions of various pH values. The pH sensor exhibited excellent electrochemical sensing performance in terms of sensitivity, response time, repeatability, selectivity, and stability. To demonstrate point-of-measurement applications, the pH sensor was integrated with a wireless electronic module that could communicate with a mobile application. The portable pH sensor accurately measured pH changes in real samples. The results obtained were consistent with those of using a commercial pH meter.

• Korean Chemical Engineering Research
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• v.57 no.5
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• pp.606-610
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• 2019

In this study, we demonstrated that the nonenzymatic glucose sensor based on the flexible carbon fiber bundle electrode with BDD nanocomposites (CF-BDD electrode). As a nano seeding method for the deposition of BDD on flexible carbon fiber, electrostatic self-assembly technique was employed. Surface morphology of BDD coated carbon fiber electrode was observed by scanning electron microscopy. And the electrochemical characteristics were investigated by cyclic voltammetry, electrochemical impedance spectroscopy and chronoamperometry. This CF-BDD electrode exhibited a large surface area, a direct electron transfer between the redox species and the electrode surface and a high catalytic activity, resulting in a wider linear range (3.75~50 mM), a faster response time (within 3 s) and a higher sensitivity (388.8 nA/mM) in comparison to a bare CF electrode. As a durable and flexible electrochemical sensing electrode, this brand new CF-BDD scheme has promising advantages on various electrochemical and wearable sensor applications.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.31-36
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• 2011

Tetrafluoromethane ($CF_4$) has been used as the plasma etching and chemical vapor deposition (CVD) gas for semiconductor manufacturing processes. However, the gas need to be removed efficiently because of their strong absorption of infrared radiation and the long atmospheric lifetime which cause global warming effects. A waterjet gliding arc plasma system in which plasma is combined with the waterjet was developed to effectively produce OH radicals, resulting in efficient destruction of $CF_4$ gas. Design factors such as electrode shape, electrode angle, gas nozzle diameter, electrode gap, and electrode length were investigated. The highest $CF_4$ destruction of 93.4% was achieved at Arc 1 electrode shape, $20^{\circ}$ electrode angle, 3 mm gas nozzle diameter, 3 mm electrode gap and 120 mm electrode length.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.43-47
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• 2022

In this study, we demonstrated an eco-friendly thin-metallic-film-based heater which can be operated in water. Based on the materials stability, Mo was selected as the heating element to secure long-term stability. Using a magnetron sputtering, 40 nm-thick Mo layers were deposited onto a glass substrate, followed by the deposition of 60-nm-thick ZnO layer to prevent oxidation during the heater fabrication process. Then, PVB (Polyvinyl Butyral) was applied on top of ZnO layer and an additional glass substrate was placed, which were heated at 150℃ for 2 hr. The PVB was cured with strong adhesion by the processing condition. We operated the Glass/Mo/ZnO/Glass heater in water, and it was shown that the water temperature reached 50℃ within 2 minutes, with a minimal resistance change of the heater. Finally, the heaters exhibit a semi-transparency, and this aesthetic advantage is expected to contribute to the added value of the heater.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.157-160
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• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.69-72
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• 2021

Various studies for QLEDs using inkjet printing has been actively conducted. Multilayers in QLEDs need an orthogonal process inevitably using different solvents and it makes the inkjet printing process more difficult and expensive. Therefore, coating two layers in a single process can reduce the fabrication step, resulting in the process time. In this study, we fabricated QLEDs of standard structure using a mixture of emission layer and hole transport layer. The mixed layer was fabricated by dissolving TFB and QDs in chlorobenzene, and the maximum luminance of the device was 45,850 cd/m². It shows the bright future of the electroluminescence devices applied with inkjet printing process.

• Journal of IKEEE
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• v.27 no.1
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• pp.78-84
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• 2023

In this paper, front color glass for Building Integrated Photovoltaic (BIPV) system was implemented by spin coating method using color solution. Solutions suitable for color solutions were investigated using pearlescent pigments and various solutions to implement color glass. One of investigated solutions, NOA 63 and NOA 65, which are ultraviolet light curing agents, were able to implement color glass with superior coating properties and color reproducibility than other solutions. Color glass realized by spin coating with a NOA 65 based color solution showed high transmittance of 86% in the visible and near-infrared wavelength bands, and the change in optical properties of color glass over time was insignificant, making it a suitable material for realizing color glass for BIPV Suitable as a color solution. The solution process method using the spin coating method is expected to facilitate the manufacturing process of front color glass for BIPV as it can produce color glass more easily and quickly than the existing physical deposition method or color glass manufacturing process using nanoparticles.

• Journal of IKEEE
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• v.27 no.1
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• pp.19-24
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• 2023

Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.