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A Study on the Characteristics of a Quantum Dots Light-Emitting Diodes Using a Mixed Layer of Quantum Dots and Hole Transport Materials

양자점과 정공 수송 물질의 혼합층을 사용한 양자점 전계발광 소자의 특성 연구

  • Yoon, Changgi (Department of Advanced Materials Engineering, Kyonggi University) ;
  • Oh, Seongkeun (Department of Advanced Materials Engineering, Kyonggi University) ;
  • Kim, Jiwan (Department of Advanced Materials Engineering, Kyonggi University)
  • 윤창기 (경기대학교 신소재공학과) ;
  • 오성근 (경기대학교 신소재공학과) ;
  • 김지완 (경기대학교 신소재공학과)
  • Received : 2021.12.06
  • Accepted : 2021.12.14
  • Published : 2021.12.30

Abstract

Various studies for QLEDs using inkjet printing has been actively conducted. Multilayers in QLEDs need an orthogonal process inevitably using different solvents and it makes the inkjet printing process more difficult and expensive. Therefore, coating two layers in a single process can reduce the fabrication step, resulting in the process time. In this study, we fabricated QLEDs of standard structure using a mixture of emission layer and hole transport layer. The mixed layer was fabricated by dissolving TFB and QDs in chlorobenzene, and the maximum luminance of the device was 45,850 cd/m2. It shows the bright future of the electroluminescence devices applied with inkjet printing process.

Quantum Dot Light-Emitting Diodes (QLEDs)는 제조 공정이 용액 공정을 기반으로 하기 때문에 잉크젯 공정에 쉽게 적용할 수 있다. 하지만 QLED의 적층은 서로 다른 용매를 사용하는 직교 공정이 필요하기 때문에 잉크젯 인쇄 공정이 더 복잡하며 비용이 상승한다. 따라서 한 번의 공정으로 두 개의 층을 증착하면 제조 단계를 줄일 수 있어 공정 시간이 절감된다. 이 연구에서 우리는 QD와 정공 수송 재료의 혼합물을 사용하여 standard 구조의 QLED를 제작하였다. TFB와 QD를 클로로벤젠에 분산시켜 혼합층에 사용하였고, 소자는 45,850 cd/m2의 최고 휘도를 나타내었다. 이 연구는 잉크젯 프린팅 공정을 적용하여 전계발광 장치를 제작할 수 있는 가능성을 확인하였다.

Keywords

Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2021R1F1A1061248) and Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (P0017012, Human Resource Development Program for Industrial Innovation).

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