• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.504-513
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• 1997

Ideal candidates for the thermal-protection system of advanced spacecraft like Space Shuttle, are FRCI(Fibrous Refractory Composite Insulation) and AETB(Alumina-Enhanced Thermal Barrier). In the present work, we carried out the mathematical modeling and computer simulation of the thermal response of FRCI to heat, pulse, comparing with that of silica. Also, we calculated the conductivity of FRCI as various variables at the temperature range of 100~2000 K.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.161-162
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• 2008

본 논문에서는 820.11n 규격에 적합한 Fractional-N 주파수 합성기를 설계하였다. 본 논문에서 설계한 주파수 합성기의 특징은 PFD(Phase Frequency Detector) 뒷단에 잔여 펄스를 제거하는 Pulse Remover를 연결하여 이중 궤환 Charge Pump의 안정도를 향상시켰으며, Charge Pump에서 동시에 발생하는 Up/Down 전류로 인한 Spike성 전류를 없앰으로서 스퓨리어스를 최소화 시켰다. Pulse Removed RFD를 사용함으로서 발생하는 PFD Deadzon문제는 2N+2분주와 2N-2분주기를 3차의 ${\Delta}{\Sigma}$ Modulator가 선택해줌으로 해결하였다. 삼성 0.18u 공정을 이용하여 설계 하였으며 각 블록은 Cadence spectre를 이용하여 검증하였다.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.515-520
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• 2003

Characteristics of an amplifier with repetition rate of a few KHz is investigated. The continuous flash lamp pumped Nd:YAG laser head is used as an amplifier. The thermally induced birefringence of the laser medium is compensated and the depolarization is reduced to 5% in a double-pass amplifier. The amplification factor of a four pass amplifier reaches to about 3.2 at the repetition rate 5-10 KHz and the pulse width is lengthened from 40 ns to 48 ns.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1546-1548
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• 1998

Dual mode ring resonators(DMRR) have been fabricated using laser ablated $YBa_2Cu_3O_{7-x}$ superconducting thin films. The transition temperature of YBCO thin films were 85 - 88 K and the film thicknesses were about 5,000 $\AA$. Dual mode ring resonators were patterned by standard photolithography process and wet-etching. Then two-layer metal thin films (Ti/Ag) have been deposited for the ground plane on the back side of substrate by e-beam and thermal evaporation. The input/output feedline angles of each resonator were $60^{\circ}$, $100^{\circ}$, $180^{\circ}$. A network analyzer was used for testing the performance of the resonators in the frequency range of 6-13 GHz at 77 K.

• 유체기계공업학회:학술대회논문집
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• 2006.08a
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• pp.565-568
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• 2006

This paper achieved dynamic characteristics with test to use solenoid valve for flight model that have present. Designed pressure control virtual system which PWM solenoid valve to use test result. Examination compared solenoid valve dynamic characteristics in atmosphere and cryogenic fluid and presented technique and valuation method that measured upstream and down stream pressure of solenoid valve, as well as, temperature, excitation voltage etc. These test results could confirm solenoid valve response time and maximum using frequency characteristic at use in atmosphere and cryogenic temperature and this derived design variables pressure control system from those bases.

• Journal of ILASS-Korea
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• v.2 no.4
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• pp.22-28
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• 1997

In this paper an experimental study of a spray created by two impinging jets is presented utilizing a novel two-reference-beam double-pulse holographic technique. Visualization of the overall spray pattern as well as measurements on the size and velocity of the droplets were performed with the special emphasis on the effect of physical properties of liquids. The overall spray pattern clearly revealed the inherent wave nature In the disintegration process of this type of atomization. The structure of liquid elements near the impingement point is indicative of the mechanisms of the disintegration process. Surface tension plays an important role in the droplet size without any noticeable effect on the spray pattern, whereas viscosity affects the structure without any significant effect on the droplet sire. The droplet velocities were not affected by liquid properties.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1386-1388
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• 2008

본 논문에서는 820.11n 규격에 적합한 Fractional-N 주파수 합성기를 설계하였다. 본 논문에서 설계한 주파수 합성기의 특징은 PFD(Phase Frequency Detector) 뒷단에 잔여 펄스를 제거하는 Pulse Remover를 연결하여 이중 궤환 Charge Pump의 안정도를 향상시켰으며, Charge Pump에서 동시에 발생하는 Up/Down 전류로 인한 Spike성 전류를 없앰으로서 스퓨리어스를 최소화 시켰다. Pulse Removed PFD를 사용함으로서 발생하는 PFD Deadzon문제는 2N+2분주와 2N-2분주기를 3차의 ${\Delta}{\Sigma}$ Modulator가 선택해줌으로 해결하였다. 삼성 0.18u 공정을 이용하여 설계 하였으며 각 블락은 Cadence spectre 를 이용하여 검증하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.197-197
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• 2014

Plasma를 이용하는 반도체 공정에서 high density, plasma uniformity 및 electron temperature와 같은 plasma 특성을 조절하는 것은 차세대 공정 장비 개발에 있어서 매우 중요한 요소이다. 본 연구에서는 이를 위해 2개의 다른 주파수를 사용하는 spiral type의 안테나에 pulse를 적용시켜 각각 인가되는 power를 조절함으로써 plasma의 특성을 조절하고자 하였다. 또한 pulse plasma를 적용하여 다양한 duty ratio 조건에서 plasma 특성을 확인하였으며 식각 공정을 통하여 etch selectivity를 향상시키려 하였다.

• Journal of ILASS-Korea
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• v.2 no.2
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• pp.16-23
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• 1997

In this research a novel two-reference-beam double pulse holographic technique for the measurments of particle sizes and velocities was developed. This holographic method features the capability of separation of the first and second particle images by using two reference beams instead of one and the change of the polarization direction of laser light. The developed holographic system was tested through the measurements of droplet sizes and velocities in the spray created by two high speed impinging jets. The overall spray pattern clearly revealed the inherent wave nature. Smaller and faster droplets were generated with larger impingement angle, higher jet velocity. and smaller orifice diameter.

• Korean Journal of Crystallography
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• v.9 no.2
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• pp.131-137
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• 1998

결정결함의 밀도가 낮은 GaN epitaxy 막을 MOCVD(metal organic chemical vapour deposition) 방법에 의해 성장시켰다. 기판은 6H-SiC를 사용하였으며, AlN과 GaN으로 구성된 이중 buffer 층을 도입하였다. GaN buffer 층은 반응원료인 trimethyl gallium(TMG)과 NH3 가스를 교호식펄스공급(alternating pulsative supply, APS)방법에 의해 만들었다. AlN buffer/6H-SiC 위에 초기단계에 형성되는 GaN 섬은 APS처리에 의해 크기가 커지는 것을 AFM(atomic force microscope)으로 관찰하였다. Buffer 층의 역할은 그 위에 성막시킨 GaN epitaxy 막의 결정성과 결함밀도에 의해 조사하였다. 성막된 GaN의 결정구조와 결정성은 DCXRD(double crystal X-ray diffractormeter)에 의해 측정되었다. 결정결함은 EPD(etching pit density)를 측정하는 방법으로 알칼리혼합용에서 처리된 막을 SEM(scanning electron microscope)으로 관찰하였다.