• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.200-205
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• 2000

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.528-537
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• 2002

In this paper, the extended FDTD is used for the analysis of microwave circuits including active elements. Lumped elements such as R, L, C which are inserted into a microstrip line are analyzed with the FDTD lumped element modeling. Parasitic capacitance and inductance could be obtained using network modeling and so it is sure that FDTD lumped element modeling makes it possible to get more accurate data which include parasite components. Moreover, a balanced mixer using two diodes that are modeled by an extended FDTD is designed and the more exact characteristic of the mixer is acquired than in current circuit simulator.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2329-2334
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• 2012

In this paper, we performed a study of damage assessment model development to analyze the initial nuclear pulse radiation damage to semiconductor devices for military weapon systems. At first we modeled(M) the nuclear pulse radiation and diode device, and simulated(S) the output characteristics of the device to the input. Then the manufactured diodes which had the same characteristics with the modeled one were irradiated to the similar pulsed type radiation and their output signals were measured simultaneously. Error between the M & S results and the measured values of the analysis was 22.9%. Through the error value we could confirm that the damage assessment model simulated the TREE effects with a quite accuracy.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.225_226
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• 2009

최근 전력산업의 화두가 되고 있는 지능형 전력망과 그린 에너지 사용의 확대로 인하여 배전계통은 더욱 복잡한 망구조를 띄고 있으며, 이에 따라 계통에서 발생하는 고장전류 증가 및 과도현상들도 매우 다양하게 나타나고 있다. 이와 같은 과도현상으로부터 배전계통을 보호하기 위해 전력용 퓨즈, Recloser, 과전류 계전기, 과전압 계전기 등이 사용된다. 이러한 보호 기기들이 정상 동작하기 위해서는 사전 모의를 통해 상시 부하 전류와 고장 전류 및 계통 이상 상태를 파악하고, 다른 보호기기와의 보호 협조를 고려해야 한다. 이러한 보호 장비들을 구현하고, 동작을 검증함에 있어 기존에는 EMTP(ElectroMagnetic Transients Program)와 같은 과도현상 해석 프로그램이 사용되어 왔다. 최근 상용 버전으로 개발된 EMTP-RV(ElectroMagnetic Transients Program-Restructured Version)는 기존의 컨트롤 소자들로만 구현해야 했던 한계점을 극복하기 위해 사용자 정의가 가능한 DLL(Dynamic Link Library) 기능을 제공함으로써 사용자가 EMTP-RV 개발자와 동일한 환경 하에서 계통 소자를 구현할 수 있도록 하였다. 본 논문에서는 새로운 모델링 기법인 DLL 기능을 이용하여 과전압계전기를 구현하고 결과를 검증하여 모델링 방법의 적합함을 보였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.200-203
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• 2007

Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was $3{\mu}m$ space. In this paper, I-V characteristics was modeled by using of device fabricated process conditions parameters and it was extracted that the I-V property parameters, and it was compared and analyzed with between device parameters and model parameters.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.262-266
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• 2001

본 논문에서는 Excelics사의 EFA240D 모델을 이용하여 파라미터를 추출하였고, 파라미터 중 내부소자들은 ADS(Advanced Design System)의 SDD(Symbolically Defined Device)를 이용하여 정의하였다. 또한 내부소자들을 내부전압이 아닌 외부전압으로 정의하는 방법과 채널 전류를 DC와 AC로 나누어 모델링하는 방법을 제시하였다.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.32 no.1
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• pp.100-106
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• 1996

반도체 소자에 정전기 방전으로 인한 소자내의 온도 상승을 알기 위해 열전달 방정식으로부터 열모델을 유도하였다. 그리고 열파괴 문턱전류를 얻고 시간에 따른 온도 변화를 열모델로부터 해석하였다. 여기서 유도한 열모델은 Wunsch-Bell모델에 지수 항을 추가한 형태이다. 이 모델의 유효성을 증명하기 위해 실험결과와 비교한 결과 매우 잘 일치하였으므로 이 열모델의 함수는 입력보호회로의 반도체소자를 설계하는데 매우 유용하다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.8
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• pp.4723-4728
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• 2014

In this study, a thermoelectric module (TEM) and a diesel engine were modeled using 1-D commercial software AMESim, and the performance of the TEM was evaluated when the engine was operated under the NEDC driving cycle. The goal of TEM modeling was to investigate not only the waste heat recovery (WHR) rate and energy converting efficiency, but also the heat transfer rate by taking the materials characteristics into account. In addition, a diesel oxidation catalyst (DOC) was designed, and it was found that the waste heat recovery with TEM affects the activation of DOC and alters engine exhaust composition. The simulation indicated that the WHR using TEM is beneficial for decreasing the fuel consumption of vehicles, but the reduction in the exhaust temperature affects the activation of DOC, resulting in an approximately 14% increase in CO and HC emissions. Therefore, the effect of waste heat recovery on the automotive emission characteristics must be considered in the development of automotive engine WHR systems.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.6
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• pp.26-34
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• 2006

In this paper, We proposed he algorithm for defect extraction and a study of the stereo image modeling o inspect defect for the ball height of BGA(ball grid way) device using 2-dimensional images captured by the BGA device of using the high resolution CCD cameras. This paper propose the package/ball area extraction of BGA device part, the FOV(field of view) calibration part, the top point matching part, and ball height measurement method. Each BGA device propose extraction method by defect, Through the experiment, we verified the result.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.27-38
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• 2002

A new self-consistent mathematical model for semiconductor quantum well device was developed. The model was based on the direct solution of the Boltzmann transport equation, coupled to the Schrodinger and Poisson equations. The solution yielded the distribution function for a two-dimensional electron gas(2DEG) in quantum well devices. To solve the Boltzmann equation, it was transformed into a tractable form using a Legendre polynomial expansion. The Legendre expansion facilitated analytical evaluation of the collision integral, and allowed for a reduction of the dimensionality of the problem. The transformed Boltzmann equation was then discretized and solved using sparce matrix algebra. The overall system was solved by iteration between Poisson, Schrodinger and Boltzmann equations until convergence was attained.