Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2007.10a
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- Pages.200-203
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- 2007
Characteristics Modeling of Junction Barrier Schottky Diodes for ultra high breakdown voltage with 4H-SiC substrate
탄화규소(4H) 기판의 초고내압용 접합 장벽 쇼트키 다이오드의 특성 모델링
- Song, Jae-Yeol (Dongeui University) ;
- Bang, Uk (KERI) ;
- Kang, In-Ho (KERI) ;
- Lee, Yong-Jae (Dongeui University)
- Published : 2007.10.26
Abstract
Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was
넓은 에너지 갭의 물질인 탄화규소(4H)기판을 사용하여, 초고내압을 위한 접합장벽 쇼트키 구조의 소자를 설계하여 제작하였다. 측정결과로써 소자의 역방향 I-V 특성은 1000V 이상의 항복전압을 보였고 p-grid의 설계 최적 길이는