Computer Modeling and characteristics of MFMIS devices Using Ferroelectric PZT Thin Film

강유전체 PZT박막을 이용한 MFMIS소자의 모델링 및 특성에 관한 시뮬레이션 연구

  • 국상호 (고려대학교 전기·전자·전파공학과) ;
  • 박지온 (고려대학교 전기·전자·전파공학과) ;
  • 문병무 (고려대학교 전기·전자·전파공학과)
  • Published : 2000.03.01

Abstract

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

Keywords

References

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