• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.330-334
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• 2004

본 논문에서는 Nd:YAC 레이저의 제 2고조파에 의해 펌핑되는 고체레이저의 다중통과 증폭기의 이론적 고찰에 대하여 논하였다. 다중통과 증폭기의 입력레이저는 Ti:sapphire 레이저이며, 펌핑광원의 주입 후 입력 빔의 통과 회수에 따른 추출효율, 소신호 이득계수에 대한 변화 등을 조사하여 다중통과 증폭을 위한 최적조건을 구하였다. 또한, 실험에서 2단 다중통과 증폭기에서 790 nm의 입력 파장을 주입하였을 때, 42 mJ의 최대 출력에너지, 21 ㏈의 증폭이득, 25%의 출력효율을 얻었다.

• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.457-460
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• 1994

Dependence of saturation energy density and small signal gain coefficient on the active gas pressure in XeCl laser amplifier has been investigated. The saturation energy density was increased almost linearly as 1.3, 1.45, 2.0, and $2.3mJ/\textrm{cm}^2$ when the pressure of Xe and He were 30 and 2000 mb, and the pressure of HC] was varied as 34, 52, 73, and 92 mb. Whereas the small signal gain coefficient was measured to be 6.5, 7.5, 7.0, 7.0 %/cm, which shows that the small signal gain did not varies not so much.o much.

• Korean Journal of Optics and Photonics
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• v.6 no.2
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• pp.130-134
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• 1995

A small signal gain coefficient of Nd:glass was measured and a cavity-dumped laser was constructed. To measure the small signal gain coefficient, we constructed a resonator consisting of Nd:glass, Pockels cell, polarizing beam splitter. The measured small signal gain coefficient was $0.088 cm_{-1}$ when the input energy was 100 J and the round-trip internal loss of the resonator was 56%. The cavity-dumped laser was constructed using Nd:glass. 2 m radius of curvature HR-mirrors, Pockels cell, polarizinig beam splitter and $\lambda/4$ plate. The output energy of cavity-dumped laser was 0.85 J at 140 J input energy and the laser pulse width was 8 ns.s 8 ns.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.10a
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• pp.9-12
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• 2004

A numerical simulation is presented for investigating the effects of pressure ratio of $D_2$ injector to supersonic nozzle on the Population inversion in the DF chemical laser cavity, while a latins concurrently takes place. In this study, these phenomena are investigated by means of analyzing the distributions of the DF excited molecules, while simultaneously estimating the maximum small signal gains and power in the DF chemical laser cavity. Major results reveal that the higher $D_2$ injection pressure provides a favorable condition for $DF^{(1)}$-$DF^{(0)}$ transition to generate the higher power laser beam.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.6
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• pp.835-840
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• 1993

In this paper a FET mixer is designed realized by small-signal S-parameter using microwave CAD, LINMIC + at Ku-band. The mixer has conversion gain 9.88dB at 14GHz RF, 1GHz IF, and + 1dBm LO imput. The maximum conversion gain is obtained 11.71dB at 1.1GHz. The result shows that the FET mixer does not need pre-and/or IF amplifier. The mixer maintains the desired conversion gain with low LO power level. The conversion gain of the mixer is higher than the available gain of a amplifier, which is experimentally verified.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.1
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• pp.78-84
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• 2005

In the chemical laser system with a radial expansion nozzle array, the laser beam generation is achieved by mixing F atom from supersonic nozzle and $D_{2}$ molecule from holes of round-bended supply line. Based on that the fuel injection angle with main stream has a great influence of performance on supersonic combustor, the effects of $D_{2}$ injection angles with the main F flow on mixing enhancement are numerically investigated. The results are discussed by comparison with three cases of $D_{2}$ injection angles; $10^{o}$, $20^{o}$ and $40^{o}$ with the main flow direction. Major results reveal that as the $D_{2}$ injection angle increases, the maximum small signal gains and the static pressure in the laser cavity become higher. Consequently, the $D_{2}$ injection angle between $20^{o}$ and $40^{o}$ is recommended as an optimized geometric parameter in consideration of both of high gains and low cavity pressure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.4
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• pp.323-330
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• 2002

In this paper, we have designed and fabricated an BWLL MMIC amplifier using GaAs PHEMT devices. We have optimized power divider/combiner size for small size of MMIC amplifier Using 0.2 ${\mu}$m AIGaAs/lnGaAs/GaAs PHEMT devices, the two stave MMIC amplifier has demonstrated a S$_{21}$ gain of 8.7 ㏈ with input/output return losses of lower than -10 ㏈ at 26.7 GHz. The size of this chip is 4.11 ${\times}$ 2.66 $\textrm{mm}^2$.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.228-232
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• 1995

We have made modulation doped SMQW-PBH-DFB-LD for high speed optical communications. The waveguide and barrier layers were doped by Zn with the concentration of $1.2 \times 10^{18}cm^{-1}$. Mean threshold current and slope efficiency were 24.88 mA (minimum 16 mA) and 0.197 mW/mA (maximum 0.275 mW/mA) respectively. Linewidth enhancement factor ($\alpha$) of MD-SMQW-PBH-DFB-LD was reduced than that of SMQW-PBH-DFB-LD. Linewidth enhancement factor of 1.8 owes to the large gain coefficient of modulation doped active layer. The resonance frequency was linearly increased with the square root of optical power. The resonance frequency in small signal modulation was measured as 8 GHz and -3 dB modulation bandwidth was 10 GHzat $46mA(I_{th}+30mA)$..

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.7-12
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• 2004

In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm.