• Title/Summary/Keyword: 반도체상

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Comparative Study on the Characteristics of Heat Dissipation using Silicon Carbide (SiC) Powder Semiconductor Module (탄화규소(SiC) 반도체를 사용한 모듈에서의 방열 거동 해석 연구)

  • Jung, Cheong-Ha;Seo, Won;Kim, Gu-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.4
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    • pp.89-93
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    • 2018
  • Ceramic substrates applied to power modules of electric vehicles are required to have properties of high thermal conductivity, high electrical insulation, low thermal expansion coefficient and resistance to abrupt temperature change due to high power applied by driving power. Aluminum nitride and silicon nitride, which are applied to heat dissipation, are considered as materials meeting their needs. Therefore, in this paper, the properties of aluminum nitride and silicon nitride as radiator plate materials were compared through a commercial analysis program. As a result, when the process of applying heat of the same condition to aluminum nitride was implemented by simulation, the silicon nitride exhibited superior impact resistance and stress resistance due to less stress and warping. In terms of thermal conductivity, aluminum nitride has superior properties as a heat dissipation material, but silicon nitride is more dominant in terms of reliability.

Separation of Single-Wall Carbon Nanotubes by Agarose Gel (아가로스 겔을 이용한 단일벽 탄소나노튜브 분리)

  • Yu, Lan;Lim, Yun-Soo;Han, Jong-Hun
    • Applied Chemistry for Engineering
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    • v.22 no.3
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    • pp.272-276
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    • 2011
  • The separation of metallic and semiconducting single-wall carbon nanobubes (SWCNTs) by agarose gel method was carried out in this study. The effect of concentration of agarose, SDS (sodium dodecyl sulfate), and pH in the solution on separation behavior was investigated. With increasing the concentration of agarose in the solution, it showed that the ratio of metallic SWCNTs, which was analyzed from UV-vis-NIR spectroscopy, was increased in the solution phase, while the overall concentration of SWCNTs was decreased. With increasing the concentration of SDS, we could observe that the ratio of metallic SWCNTs was increased due to more affinity between SDS molecules and metallic SWCNT. The highest metallic SWCNTs ratio was reached up to 58.4% when the pH of solution was 8.2.

Secure Direct Communication protocol Using Entanglement Swapping (Entanglement Swapping을 이용한 안전한 직접 통신 프로토콜)

  • Hong Chang-ho;Lee Hwa-yean;Kim Ji-in;Lim Jong-in;Yang Hyung-jin
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.16 no.1
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    • pp.3-12
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    • 2006
  • We propose a direct communication protocol using entanglement swapping. The safety of this protocol is guaranteed by the basic properties of entanglement swapping. This protocol is efficient to transmit two classical bits of information per one session. This efficiency is better than that of ping-pong protocol suggested by Bostrom and Felbinger. Even if an eavesdropper intervenes in midway, the eavesdropper will be detected with the probability of $75\%$ in the verification process of one bit. Therefore the perfect security is guaranteed if we use enough amount of bits for the verification process.

Design and Evaluation of 32-Bit RISC-V Processor Using FPGA (FPGA를 이용한 32-Bit RISC-V 프로세서 설계 및 평가)

  • Jang, Sungyeong;Park, Sangwoo;Kwon, Guyun;Suh, Taeweon
    • KIPS Transactions on Computer and Communication Systems
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    • v.11 no.1
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    • pp.1-8
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    • 2022
  • RISC-V is an open-source instruction set architecture which has a simple base structure and can be extensible depending on the purpose. In this paper, we designed a small and low-power 32-bit RISC-V processor to establish the base for research on RISC-V embedded systems. We designed a 2-stage pipelined processor which supports RISC-V base integer instruction set except for FENCE and EBREAK instructions. The processor also supports privileged ISA for trap handling. It used 1895 LUTs and 1195 flip-flops, and consumed 0.001W on Xilinx Zynq-7000 FPGA when synthesized using Vivado Design Suite. GPIO, UART, and timer peripherals are additionally used to compose the system. We verified the operation of the processor on FPGA with FreeRTOS at 16MHz. We used Dhrystone and Coremark benchmarks to measure the performance of the processor. This study aims to provide a low-power, high-efficiency microprocessor for future extension.

Analysis of Internal Flow and Control Speed for NH3 (Ammonia) Leakage Scenario of ALD Facility (ALD 설비의 NH3(Ammonia)누출 시나리오에 대한 내부유동 및 제어 속도 해석)

  • Lee, Seoung-Sam;An, Hyeong-hwan
    • Journal of the Korean Institute of Gas
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    • v.26 no.5
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    • pp.22-27
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    • 2022
  • Atomic Layer Deposition (ALD) is a facility that deposits an atomic layer on a wafer by causing a chemical reaction after decomposition using heat or plasma by inputting two or more gases during the semiconductor process. The main gas used at this time is NH3 (Ammonia). NH3 has a relatively narrow explosive range with an upper limit (UFL) of 33.6% and a lower limit (LEL) of 15%, but it can explode if a large amount suddenly gathers in one place. It is Velocity and fatal if inhaled or in contact with the skin. NH3 (Ammonia) of ALD (Atomic Layer Deposition) facility is supplied to the chamber through the gas inlet and discharged after the reaction.

Toulene Removal over the Water-suspended Sn-Incorporated $TiO_2$ Photocatalyst Prepared by Solvothermal Method (Solvothermal 법에 의해 제조된 Sn-$TiO_2$ 나노 반도체 촉매 상에서의 수중 부유 톨루엔 광분해 반응)

  • Kim, Ji-Yeon;Kim, Ji-Eun;Kang, Mi-Sook
    • Clean Technology
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    • v.16 no.1
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    • pp.46-50
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    • 2010
  • This study focuses on the removal of water-suspended toluene of a representative sick house compounds in a liquid photo-system using nanometer-sized Sn-incorporated $TiO_2$ which was synthesized by a solvothermal method. The characteristics of the synthesized Sn-$TiO_2$ were analyzed by X-ray Diffraction (XRD), Transmission electron microscopy (TEM), Scanning electron microscopy (SEM), and UV-visible spectroscopy (UV-Vis). To estimate the photocatalytic activity of Sn-$TiO_2$, the photodegradation of water-suspended toluene was performed, and the remaining concentration was determined using UV-visible spectroscopy. The water-suspended toluene photodegradation over Sn-incorporated $TiO_2$ catalyst was better than that over pure $TiO_2$ (anatase). The water-suspended toluene of 500 ppm was perfectly decomposed within 300 minutes over 0.01 mol% Sn-$TiO_2$.

Research on a Model that reflects requests to suspend processing personal data in real time (개인정보 처리정지 요청을 실시간 반영하는 모델 연구)

  • Younhee Hong;Sang-Soo Ye
    • Journal of Platform Technology
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    • v.12 no.1
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    • pp.141-150
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    • 2024
  • The importance of personal data protection is increasingly emphasized both at home and abroad, and while overseas countries are applying various policies and dynamic management technologies, there are some gaps between compliance with laws and regulations and the application of technologies in Korea, and there are few user interfaces that provide convenient ways for data subjects to stop processing personal data. This study first analyzes the need for dynamic personal information consent management technology, the current state of the industry, and the prospects for its development. Next, this study proposes a basic model for dynamic management of personal information consent that maximizes the data subject's right to personal data self-determination while strictly complying with personal data protection laws in Republic of Korea. In particular, this study analyzes the basis of domestic laws and regulations related to the suspension of personal data processing, designs a basic model of personal data consent dynamic management interface, and presents its effectiveness. Based on the results of this study, we expect that the proposed dynamic management model for personal data use consent can be used in various ways for various websites and applications in the future.

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Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG method (EFG 법으로 성장한 β-Ga2O3 단결정의 Sn 도핑 특성 연구)

  • Tae-Wan Je;Su-Bin Park;Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Yeon-Suk Jang;Won-Jae Lee;Yun-Gon Moon;Jin-Ki Kang;Yun-Ji Shin;Si-Yong Bae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.2
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    • pp.83-90
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    • 2023
  • The β-Ga2O3 has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga2O3 has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga2O3 single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga2O3 single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga2O3 were prepared by adding different mole ratios of SnO2 powder to Ga2O3 powder, and β-Ga2O3 single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga2O3 single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga2O3 single crystal according to the Sn doping were extensively investigated.

RF Magnetron Sputtering 및 Evaporation을 이용하여 증착한 CdTe 박막의 물성평가

  • Kim, Min-Je;Jo, Sang-Hyeon;Song, Pung-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.345-345
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    • 2012
  • 최근 의료산업에서는 고해상도 및 동영상 구현이 가능한 직접 방식의 X-선 검측센서에서 X-ray 흡수효율이 좋은 반도체 센서(CdTe, CdZnTe 등)와 성숙된 기술, 집적효율이 뛰어난 CMOS 공정을 이용한 제품을 출시하여 대면적화 및 고집적화가 가능하게 되어 응용분야가 점차 확대되고 있는 추세이다. 하지만 이 역시 고 성능의 X-선 동영상 구현을 위해서는 고 해상도 문제, 검출효율 문제, 대면적화의 어려움이 있다. 기존의 X-선 광 도전층의 증착은 증착 속도와 박막 품질에서 우수한 Evaporation 법이 사용되고 있다. 한편, 대면적에 균일한 박막형성이 가능하기 때문에 양산성에서 우월성을 가지는 sputtering법의 경우, 밀도가 높은 소결체 타겟의 제조가 힘들뿐만 아니라 증착 속도가 낮아 장시간 증착 시 낮은 소결밀도로 인한 타겟 Particle 영향으로 인해서 대 면적에 고품질의 박막을 형성하기가 어렵다. 하지만 최근 소결체 타겟 제조기술 발달과 함께, 대면적화와 장시간 증착에 대한 어려움이 해결되고 있어 sputtering 법을 이용한 고품질 박막 제조 기술의 연구가 시급한 실정이다. 본 연구에서는 $50{\times}50$ mm 크기의 non-alkali 유리기판(Corning E2000) 위에 Evaporation과 RF magnetron sputtering을 사용하여 다양한 기판온도 (RT, 100, 200, 300, $350^{\circ}C$)에서 $1{\mu}m$의 두께로 CdTe 박막을 증착하였다. RF magnetron sputtering의 경우 CdTe 단일 타겟(50:50 at%)을 사용하였으며 Base pressure는 약 $5{\times}10^{-6}$ Torr 이하까지 배기하였고, Working pressure는 약 $7.5{\times}10^{-3}$ Torr에서 증착하였다. 시편과 기판 사이의 거리는 70 mm이며 RF 파워는 150 W로 유지하였다. CdTe 박막의 미세구조는 X-ray diffraction (XRD, BRUKER GADDS) 및 Field Emission Scanning Electron Microscopy (FE-SEM, Hitachi)를 사용하여 측정하였다. 또한, 조건별 박막의 조성은 Energy Dispersive X-ray Spectroscopy (EDS, Horiba, 7395-H)을 사용하여 평가하였다. X-선 동영상 장치의 구현을 위해서는 CdTe 다결정 박막의 높은 흡수효율, 전하수집효율 및 SNR (Signal to Noise Ratio) 등의 물성이 요구된다. 이러한 물성을 나타내기 위해서는 CdTe 박막의 높은 결정성이 중요하다. Evaporation과 RF magnetron sputtering로 제작된 CdTe 박막은 공정 온도가 증가함에 따라 기판상에 도달하는 스퍼터 원자의 에너지 증가로 인해서 결정립이 성장한 것을 확인할 수 있었다. 따라서 CdTe 박막이 직접변환방식 고감도 X-ray 검출기 광도 전층 역할을 수행할 수 있을 것으로 기대된다.

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Dosimetry for Total Skin Electron Beam Therapy in Skin Cancer (피부암치료를 위한 전자선 전신피부 치료방법과 선량분포 측정)

  • Chu, Sung-Sil;Loh, John-Jk;Kim, Gwi-Eon
    • Radiation Oncology Journal
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    • v.10 no.1
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    • pp.107-113
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    • 1992
  • Increasing frequency of skin cancer, mycosis fungoides, Kaposi's sarcoma etc, it need to treatment dose planning for total skin electron beam (TSEB) therapy. Appropriate treatment planning for TSEB therapy is needed to give homogeneous dose distribution throughout the entire skin surface. The energy of 6 MeV electron from the 18 MeV medical linear accelerator was adapted for superficial total skin electron beam therapy. The energy of the electron beam was reduced to 4.2 MeV by a $0.5\;cm\times90\;cm{\times}180\;cm$ acryl screen placed in a feet front of the patient. Six dual field beam was adapted for total skin irradiation to encompass the entire body surface from head to toe simultaneously. The patients were treated behind the acryl screen plate acted as a beam scatterer and contained a parallel-plate shallow ion chamber for dosimetry and beam monitoring. During treatment, the patient was placed in six different positions due to be homogeneous dose distribution for whole skin around the body. One treatment session delivered 400 cGy to the entire skin surface and patients were treated twice a week for eight consecutive weeks, which is equivalent to TDF value 57. instrumentation and techniques developed in determining the depth dose, dose distribution and bremsstrahlung dose are discussed.

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