• Progress in Medical Physics
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• v.16 no.3
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• pp.111-115
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• 2005

We have designed the multi channel detector for the quality assurance of clinical photon beams. The detector was composed of solid phantom inserted by six plane-parallel ionization chambers at different depth. The chamber as a mini plane parallel chamber was made of carbon coated microfilms. In this study the electrical characteristics of the six chambers in the solid phantom were evaluated using 6 MV photon beam. The leakage currents were less than 0.5 pA, reproducibility was less than 0.5$\%$, linearity was less than 0.5$\%$, and dose rate effect was less than 0.7$\%$. In addition the effect of dose variation from other chambers was estimated to maximum 0.8$\%$ approximately. The developed detector can be used for quality determination in output dosimetry or measurement of percentage depth dose approximately for clinical photon beam.

• Proceedings of the Korean Society for Rock Mechanics Conference
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• 2008.03a
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• pp.79-88
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• 2008

Since the hydraulic fracturing field testing method was introduced first to Korean geotechnical engineers in 1994, there have been lots of progresses in a hardware system as well as an interpretation tool. The hydrofracturing system of first generation was the pipe-line type, so it was not easy to handle. It had been modified to a wire-line system at their second generation. It was more compact one but it also needed an additional air-compressor. Our current system is much more compact and operated by all-in-one system, so it doesn't need an additional air-compressor. With a progress in a hardware system, the software for analyzing the in-situ stress regime has also been progressed. For example, the shut-in pressure, which is the most ambiguous parameter to be obtained from hydrofracturing pressure curves, can now be acquired automatically from the various methods. While the hardware and software for hydrofracturing tests are being developed during the last decade, the author could accumulate the field test results which can cover the almost whole area of South Korea. Currently these field data are used widely in a feasibility study or a preliminary design step for tunnel construction in Korea. Regarding the difficulties in a site selection and a test performance for the in-situ stress measurement at an off-shore area, the in-situ stress regime obtained from the field experiences in the land area can be used indirectly for the design of a sub-sea tunnel. From the hydrofracturing stress measurements, the trend of magnitude and direction of in-situ stress field was shown identically with the geological information in Korea.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.143-151
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• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.5
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• pp.947-954
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• 2009

This paper proposed a new balanced power amplifier using the reflected input of conventional balanced power amplifiers composed of branch line hybrid coupler. In general, the single-ended amplifier in balanced amplifiers does not have the perfect matching, so the reflected input power, in other words the leakage power, is terminated conventionally at the isolation port of hybrid coupler. However in this work, the leakage power is injected into the auxiliary amplifier, and its output power is combined to the output power of balanced amplifier. Therefore output power, efficiency, and 2-tone IMD3 performances of the proposed balanced amplifier are highly improved compared to the conventional balanced amplifier. For the verification of the proposed balanced amplifier, a conventional balanced amplifier and the proposed balanced amplifier are designed, fabricated and measured, and the measured results are compared. The proposed balanced amplifier shows the improvement in the output power(Pout), power added efficiency (PAE), and 2-tone IMD3 by 3dB, 5.2%, and $5{\sim}10dBc$, respectively, from the measurement.

• Food Science and Preservation
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• v.11 no.2
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• pp.263-268
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• 2004

Two field cooling tests were conducted to evaluate the cooling characteristic of paddy with a prototype grain cooler. The first test was carried out during summer season in a steel bin with 180.3ton of paddy at Sunchon. And the second test was carried out during harvesting season in a steel bin with 272.2ton of paddy at Ulsan. At the first test, initial paddy temperature of 23.6$^{\circ}C$ was dropped to 14$^{\circ}C$, and initial moisture content of 19.9% was dropped to 19.3% after 52.5 hours of cooling. At the second test, initial paddy temperature of 16.1$^{\circ}C$ dropped to 5.5$^{\circ}C$ after 78.0 hours of cooling. And, at the first test, the average air flow rates of chilled air leaving the grain cooler and penetrating the grain layer were 77.5 ㎥/min and 42.5 ㎥/min, respectively. To prevent leakage of chilled air from plenum chamber of steel bin, which was about 45% of the average air flow rates of chilled air leaving the grain cooler, a proper method was required. The average total power consumption at the first test during summer was 22.1 ㎾ with control of fan damper. At the second test, it was 17.4 ㎾ due to controlling the capacity of compressor with unloading solenoid valve and changing the flow rates of hot refrigerant gas flowing into evaporator and reheater from compressor, resulting in 27% reduction of energy consumption.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.42-48
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• 2002

The design, construction and performance test of a convenient multi-purpose irradiator is described. A multi-purpose irradiator using Cesium-137 has been developed for studies of low dose radiation effects in biology and for calibration of Thermo Luminescent dosimeter(TLD). During the operation, three rods of radioactive material which are 10cm in length revolve 180 degrees and irradiate biological samples, or TLD, and return to their shielded position, after the programmed time. A programmable Logic Controller(PLC) controls the sequence of operation, interlock, motor rotation and safety system. The rotation speed of biological samples can vary up to 20 RPM. A real time monitoring system was also incorporated to check and control the operation status of the irradiator. The capacity of the irradiation chamber was 4.5 liters. The isodose distribution at arbitrary vertical planes was measured by using film dosimetry. The dose-rate was 0.13 cGy/min in air and 0.11 cGy/min in water equivalent material in the case of Cesium-137. Range of activity was 2 Ci. The homogeneity of dose distribution in the chamber was ${\pm}$7%. The actual radiation level on the surface was within permissible levels. The irradiator had a maximum 0.35 mR/min radiation leakage on its surface.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.91-96
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• 2011

In this paper, a low-power direct-conversion transmitter based on current-mode operation, which satisfies the IEEE 802.15.4 standard, is proposed and implemented in a $0.13{\mu}m$ CMOS technology. The proposed transmitter consists of DACs, LPFs, variable gain I/Q up-conversion mixer, a divide-by-two circuit with LO buffer, and a drive amplifier. By combining DAC, LPF, and variable gain I/Q up-conversion mixer with a simple current mirror configuration, the transmitter's power consumption is reduced and its linearity is improved. The drive amplifier is a cascode amplifier with gain controls and the 2.4GHz I/Q differential LO signals are generated by a divide-by-two current-mode-logic (CML) circuit with an external 4.8GHz input signal. The implemented transmitter has 30dB of gain control range, 0dBm of maximum transmit output power, 33dBc of local oscillator leakage, and 40dBc of the transmit third harmonic component. The transmitter dissipates 10.2mW from a 1.2V supply and the die area of the transmitter is $1.76mm{\times}1.26mm$.

• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.456-456
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• 2010

CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.