• Proceedings of the Korean Information Science Society Conference
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• 2005.07b
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• pp.619-621
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• 2005

은닉 마코프 모델은 이산 동역학을 표현할 수 있는 확률 모형이다. 우도 함수 최적화를 수행하는 전통적인 Baum-Welch 학습 알고리즘은 국소해로 수령하기 쉬우며, 우도함수의 특성상 복잡한 모델을 선호하는 바이어스가 존재한다. 베이지안 프레임워크에서는 파라미터를 랜덤 변수로 보고 이에 대한 사후 확률 분포를 추정하여 이 문제를 해결할 수 있다. 본 논문에서는 베이지안 추정을 위한 결정론적 근사화 기법인 변분 베이지안 방법을 이용, 출력 노드에 가우시안 혼합 노드를 지니는 일반화된 HMM의 추론 방법을 유도한다. 인공 데이터에 대한 실험을 통해, 본 방법이 효과적인 HMM 학습을 수행할 수 있음을 보인다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.716-718
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1260-1265
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.2
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• pp.325-330
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.878-881
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of Korea Multimedia Society
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• v.12 no.8
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• pp.1155-1163
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• 2009

This paper proposes an automatic facial expression generation system of vector graphic character using gaussian process model. Proposed method extracts the main feature vectors from twenty-six facial data of character redefined based on Russell's internal emotion state. Also by using new gaussian process model, SGPLVM, we find low-dimensional feature data from extracted high-dimensional feature vectors, and learn probability distribution function (PDF). All parameters of PDF are estimated by maximization the likelihood of learned expression data, and these are used to select wanted facial expressions on two-dimensional space in real time. As a result of simulation, we confirm that proposed facial expression generation tool is working in the small facial expression datasets and can generate various facial expressions without prior knowledge about relation between facial expression and emotion.

• The Journal of the Acoustical Society of Korea
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• v.25 no.8
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• pp.370-374
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• 2006

Mel-frequency cepstral coefficients are widely used as the feature for speech recognition. In FMCC extraction process. the spectrum. obtained by Fourier transform of input speech signal is divided by met-frequency bands, and each band energy is extracted for the each frequency band. The coefficients are extracted by the discrete cosine transform of the obtained band energy. In this Paper. we calculate the output energy for each bandpass filter by taking the weighting function when applying met-frequency scaled bandpass filter. The weighting function is Gaussian distributed function whose center is at the formant frequency In the experiments, we can see the comparative performance with the standard MFCC in clean condition. and the better Performance in worse condition by the method proposed here.