• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.629-635
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• 2012

Two novel conjugated copolymers utilizing 4,7-dithien-2-yl-2,1,3-benzothiadiazole (DTBT) coupled with cyano (-CN) substituted vinylene, as the electron deficient moeity, have been synthesized and evaluated in bulk heterojunction solar cell. The electron deficient moeity was coupled with carbazole and fluorene unit by Knoevenagel condition to provide poly(bis-2,7-((Z)-1-cyano-2-(5-(7-(2-thienyl)-2,1,3-benzothiadiazol-4-yl)-2-thienyl)ethenyl)-alt-9-(1-octylnonyl)-9H-carbazol-2-yl-2-butenenitrile) (PCVCNDTBT) and poly(bis-2,7-((Z)-1-cyano-2-(5-(7-(2-thienyl)-2,1,3-benzothiadiazol-4-yl)-2-thienyl)ethenyl)-alt-9,9-dihexyl-9H-fluoren-2-yl) (PFVCNDTBT). The optical band gaps of PCVCNDTBT (1.74 eV) and PFVCNDTBT (1.80 eV) are lower than those of PCDTBT (1.88 eV) and PFVDTBT (2.13 eV), which is advantageous to provide better coverage of the solar spectrum in the longer wavelength region. The high $V_{oc}$ value of the PSC of PCVCNDTBT (~0.91 V) is attributed to its lower HOMO energy level ( 5.6 eV) as compared to PCDTBT ( 5.5 eV). Bulk heterojunction solar cells based on the blends of the polymers with [6,6]phenyl-$C_{61}$-butyric acid methyl ester ($PC_{61}BM$) gave power conversion efficiencies of 0.76% for PCVCNDTBT under AM 1.5, 100 mW/$cm^2$.

• Journal of the Korean Chemical Society
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• v.55 no.2
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• pp.177-182
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• 2011

A diketo-type ligand was synthesized by the Knoevenagel condensation reaction of thiophene-2-aldehyde with acetylacetone, subsequently its transition metal complexes with Cu(II), Ni(II), and Co(II) chlorides were also prepared. All the complexes were characterized by various physico-chemical methods. The molar conductivity data reveals ionic nature for the complexes. The electronic spectrum and the EPR values suggest square planar geometry for the Cu(II) ion. Interaction of the Cu(II) complex with CTDNA (calf thymus DNA) was studied by absorption spectral method and cyclic voltammetry. The $k_{obs}$ values versus [DNA] gave a linear plot suggesting psuedo-first order reaction kinetics. The cyclic voltammogram of the Cu(II) complex reveals a quasi-reversible wave attributed to Cu(II)/Cu(I) redox couple for one electron transfer with $E_{1/2}$ values -0.240 V and -0.194 V. respectively. On addition of CTDNA, there is a shift in the $E_{1/2}$ values 168 mV and 18 mV respectively and decrease in Ep values. The shift in $E_{1/2}$ values in the presence of CTDNA suggests strong binding of Cu(II) complex to the CTDNA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.461.1-461.1
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• 2014

본 연구진에서는 기존에 Ag2S 양자점을 흡광층으로 활용하여 양자점 감응형 태양전지(QDSC)를 제작, 그 성능과 특징을 분석하여 발표한 바 있다. 기존 연구에서 제작된 Ag2S QDSC는 11 mA/cm2의 비교적 높은 광전류와 260 mV의 비교적 낮은 전압으로 인해 1.2%의 광전환효율 성능을 나타내는 것으로 보고되었다. 추후 연구로 진행된 본 결과에서는, 기존에 Single absorber로 사용된 Ag2S의 한계를 보완하기 위해 CdS를 도입하여 co-sensitization을 활용하였다. CdS는 약 2.3 eV의 밴드갭 에너지를 갖는 물질로, 1.1 eV의 밴드갭을 갖는 Ag2S에 비해 흡광 영역은 좁지만 그만큼 전자-정공 재결합을 억제할 수 있는 장점을 가지고 있다. 또한, 전도층으로 사용한 n-type 물질인 ZnO 나노선과의 밴드구조가 매우 적합하게 조화되어, ZnO/CdS/Ag2S 순서로 이종구조를 접합시켰을 때 세 물질의 Conduction band level과 Valence band level이 순차적으로 연결되는 cascade-shaped 밴드구조를 이루게 된다. 빛을 받아 Ag2S와 CdS에서 생성된 전자는 이 cascade 모양의 conduction band를 따라 순차적으로 ZnO로 잘 전달되게 되어, 효율 향상에 큰 도움을 주었다. 이런 장점들로 인해, CdS-Ag2S co-sensitized QDSC는 Ag2S QDSC에 비해 2배나 향상된 효율인 2.4%를 기록하였으며, 이는 IPCE spectrum 측정 등으로 근거가 뒷받침되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.313-314
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• 2005

Organic light emitting diodes(OLEDs) are widely used as one of the information display techniques. We synthesized (1,10-phenanthroline)- (8-hydroxyquinoline) [Zn(Phen)q]. We studied the improvement of OLEDs properties using Zn(phen)q. The Ionization Potential(IP) and the Electron Affinity(EA) of Zn(phen)q investigated using cyclic voltammetry(CV). The IP, EA and Eg were 7.leV, 3.4eV and 3.7eV, respectively. The PL spectrum of Zn(phen)q was yellowish green as the wavelength of 535nm. In this study, we used Zn(phen)q as electron transporting layer(ETL) inserted between emitting layer(EML) and cathode. As a result, Zn(phen)q is useful as electron transporting layer to enhance the performance of OLEDs.

• Progress in Superconductivity
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• v.9 no.2
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• pp.162-166
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• 2008

We are developing a sensitive gamma ray spectrometer based on superconducting transition edge sensors. The detector consists of a small piece of high purity Sn as an absorber and a Ti/Au bilayer as a temperature sensor. It is designed to measure the thermal signal caused by absorption of gamma rays. The mechanical support and the thermal contact between the absorber and the thermometer were made with Stycast epoxy. The bilayer was formed by e-beam evaporation and patterned by wet etching on top of a $SiN_X$ membrane. A sharp superconducting transition of the film was measured near 100 mK. When the film was biased to the edge of the transition, signals were observed due to single photon absorption emitted from an $^{241}Am$ source. The measured spectrum showed several characteristic peaks of the source including 59.5 keV gamma line. The full with at half maximum was about 900 eV for the 59.5 keV gamma line. The background was low enough to resolve low energy lines. Considerations to improve the energy resolution of the gamma ray spectrometer are also discussed.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.106-107
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• 2002

Extreme ultraviolet (EUV) radiation of wavelength $\lambda$~10 nm or photon energy hv~100 eV is presently a blank region in the electromagnetic spectrum where applications are concerned. This is because no powerful sources were available until when intense-laser-produced plasmas are available. Both a new laboratory-sized source of EUV radiation and its new applications in lithography of semiconductor devices have been developed. (omitted)