Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 28 Issue 3
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- Pages.182-191
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- 1995
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
Fabrication and Characteristics of Porous Silicon
다공성 실리콘의 제조 및 특성에 관한 연구
Abstract
A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound (
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