• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.181-184
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• 1993

Microwave characteristics of the system (Zr, Sn)$TiO_4$, ceramics within composition range X between 0.2 and 0.35 were investigated at 8GHz. For the improvement properties of (Zr, Sn)$TiO_4$, system, $Ta_2O_5$ and $WO_3$ addition in the range of 0.5 to 2.0wt% were investigated.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.107-109
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• 1998

The $SnO_2$, Sn-doped $In_2O+3\; and \;Ce-doped\; TiO_2$ films have been prepared by RF sputtering method, and their opto-electrochemical properties were investigated in view of the applicability as counter electrodes in the electrochromic window system. These oxide films could reversibly intercalate $Li^+$ ions owing to the nanocrystalline texture, but remained colorless and transparent. The high transmittance of the lithiated films could be attributed to the prevalence of the $Sn^{4+}/Sn^{2+}\; and\; Ce^{4+}/Ce^{3+}$ redox couples having 5s and 6s character conduction bands, respectively. For the Ce-doped $TiO_2$ film, $(TiO_2)_{1-x}(CeO_2)_x$, an optimized electrochemical reversibility was found in the film with the composition of x = 0.1.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.461-468
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• 2012

This study focuses on the difference of photocatalytic activity depending on crystal structure type of nanoparticles ($TiO_2$) and nanotubes (TNT). The photodecomposition of 2-chlorophenol on the synthesized $TiO_2$, Sn-impregnated $TiO_2$, TNT, and Snimpregnated TNT were evaluated. The characteristics of the synthesized photocatalyts, TNT, Sn/TNT, $TiO_2$, and Sn/$TiO_2$ were analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM), and UV-Visible spectroscopy (UV-Vis), and cyclic voltammeter (CV). The water-suspended 2-chlorophenol photodegradation over $TiO_2$ (anatase structure) catalyst was better than that over pure TNT. Particularly, the water-suspended 2-chlorophenol of 10 ppm was perfectly decomposed within 4 h over Sn/$TiO_2$ photocatalyst.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.373-378
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• 2008

$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.453-457
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• 1998

In order to improve CO gas sensitivity, $TiO_2$added $SnO_2$ composite ceramics were prepared. Using XRD and SEM, the phases and micro structures of these ceramics were investigated. The resistances as a function of gas atmosphere were measured by High Voltage Measure/Source Unit. The maximum 100 ppm CO gas sensitivities of $SnO_2-TiO_2$composites were 2.5 times larger than that of pure $SnO_2$ composite and showed the obvious temperature dependence of sensitivities in 500, 100 ppm CO gas atmospheres.

• Journal of Sensor Science and Technology
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• v.33 no.2
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• pp.105-111
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• 2024

In this study, the H₂S gas sensing characteristics were evaluated using surface-modified SnO₂ microparticles by tip sonication. The surface-modified SnO₂ microparticles were synthesized using the following sequential process. First, bare SnO₂ microparticles were synthesized via a hydrothermal method. Then, the surfaces of bare SnO₂ microparticles were modified with Ti nanoparticles during tip sonication. The sensing characteristics of SnO₂ microparticles modified with Ti were systematically investigated in the range of 100-300℃, compared with the bare SnO₂ microparticles. In this study, we discuss in detail the improved H₂S sensing characteristics of SnO₂ microparticles via Ti nanoparticle modification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.277-279
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• 1996

A.C. and D.C. characteristic of TiO$_2$ added SnO$_2$ are investigated to study the electrical properties. The electrical inductivity increases as TiO$_2$content increase. The doer effect of TiO$_2$ is crucial role for the increase of electrical conductivity. The frequency-dependent ac inductivity increases with the increase of TiO$_2$ contents at low frequency region. However, at high frequency region, the difference of ac conductivity is very small. Impedance spectrums are consist of the one semicircle. Therefore, the sizes of semicircle decreases with increasing the TiO$_2$ contents.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.204-210
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• 2013

In order to improve osseointegration for biomedical implants, it is crucial to understand the interactions between nanostructured surfaces and cells. In this study, $TiO_2$ nanowires were prepared via Vapor-Liquid-Solid (VLS) process with Sn as a metal catalyst in the tube furnace. Nanowires were grown with $N_2$ heat treatment with their size controlled by the agglomeration of Sn layers in various thicknesses. MC3T3-E1 (pre-osteoblast) were cultured on the $TiO_2$ nanowires for a week. Preliminary results of the cell culture showed that the cells adhere well on the $TiO_2$ nanowires.

• Solar Energy
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• v.10 no.2
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• pp.69-76
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• 1990

Photoelectrochemical decomposition of water by the irradiation of light to the $TiO_2$ thin film soaked in water was observed. The $TiO_2$ thin film was coated on top of $SnO_2$ nesa glass by use of spray method and of dip-coating method. The spray technique of $SnO_2$ nesa film production and dip-coating technique of $TiO_2$ thin film preparation on top of the $SnO_2$ nesa film were discribed briefly. $TiO_2$ film appearance was observed by SEM and I-V characteristic curve were measured for the various thickness of $TiO_2$ film. The film Thickness $1.8{\mu}m$ showed the maximum photoelectric current. Xe-lamp was used as light source for the photoelectrochemical reaction of thin film $TiO_2$ in acidic water(pH=1)