Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2012.05a
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- Pages.110.1-110.1
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- 2012
Improvement in the negative bias stability on the water vapor permeation barriers on Hf doped $SnO_x$ thin film transistors
- Han, Dong-Seok ;
- Mun, Dae-Yong ;
- Park, Jae-Hyeong ;
- Gang, Yu-Jin ;
- Yun, Don-Gyu ;
- Sin, So-Ra ;
- Park, Jong-Wan
- 한동석 (한양대학교 나노반도체공학과) ;
- 문대용 (한양대학교 나노반도체공학과) ;
- 박재형 (한양대학교 나노반도체공학과) ;
- 강유진 (한양대학교 나노반도체공학과) ;
- 윤돈규 (한양대학교 신소재공학과) ;
- 신소라 (한양대학교 신소재공학과) ;
- 박종완 (한양대학교 신소재공학부)
- Published : 2012.05.17
Abstract
Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work,
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