• 한국안광학회지
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• 제5권2호
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• pp.167-173
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• 2000

시편의 열분석과 SEM 분석에서 투명한 BP-계열의 시료 중 BP-1은 두 가지의 미세한 상으로 형성된 액적을 가진 유리 상을 발견할 수 있었고 열처리에 의하여 불혼화 영역이 생겨났다. BP-2 시료의 경우에서는 구형의 불혼화 영역이 관찰되는데 이와 같은 불혼화 현상의 원인은 용융액 내에 존재하는 양이온의 이온장 세기에 의한 것으로 해석하였다. 그리고 BP-계열 유리의 파장에 대한 흡수도는 $Bi_2O_3$의 함량이 많을수록 크게 나타났으며 400~800 nm 파장범위에서 흡수도의 변화는 완만하게 나타났다. 그리고 자외선에 대한 흡수단은 좀더 긴 파장 쪽으로 이동하였다. FT-IR 스펙트럼에서 BP-계열의 유리는 PbO 함량이 많은 시료가 보다 큰 흡수가 일어났으며 $3382cm^{-1}$과 $2800cm^{-1}$에서 나타나는 흡수대는 각각 사면체 $BO_1$에서 B-O 신축진동에 해당하는 흡수대와 B-O-B 변각진동에 해당하는 흡수대임을 알 수 있었다. BP-계열에서 $3400cm^{-1}$ 흡수대들이 예리해지는 것은 유리질 내 생성된 결정상이 성장하고 있는 것으로 판명되었다.

• 한국표면공학회지
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• 제27권2호
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• pp.99-108
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• 1994

Films of glass-ceramics $Li_2O-Al_2O_3-SiO_2$(LAS)system were prepared on substrate of an iron plate(SCP) by sol-gel technique using metal alkoxide such as Si$(OC_2H_5)_4$,Al$(OC_2H_9)_3$) and Ti$(OC_2H_6)_4$). Sol which was made by means of simple spray coating, on the substrate was hydrolyzed at 75~$80^{\circ}C$ in moisture cabinet (80~90 % humidity) to form the multicomponent gel. The films up to about 0.8~1.0$mu extrm{m}$ in thickness can be obtained by repeating operation, spraylongrightarrowhydrolysis and condensationlongrightarrowdryinglongrightarrowheating and crystallization at $700^{\circ}C$ for 3~5min. The far-infrared radiation spectra of the coated films on substrate were examined by FT-IR and of films was also observed by scanning electron micrograph technique. The thermal evaluation of the gel-film is followed by TG/DTA measurements. The structure evaluation is followedd X-ray diffraction. These results suggest that this process is applicable to far-infrared radiat at thin film technique.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.11-14
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• 2003

[ $HfO_2$ ] thin films were deposited at $300^{\circ}C$ on p-type Si (100) substrates using $HfO_2(HfO_xN_y)$ as the precursor by plasma-enhanced chemical vapor deposition and were annealed at $300^{\circ}C$ in nitrogen plasma ambient. Compared with $HfO_2$, nitrogen plasma annealed $HfO_2$ show good chemical stability, higher crystallization temperature, lower leakage current and thermal stability. Leakage current density of nitrogen plasma annealed $HfO_2$ is approximately one order of magnitude lower than that of $HfO_2$ for the same EOT. The improvement in electrical characteristics of nitrogen plasma annealed $HfO_2$ can be explained by the better thermal stability due to nitrogen incorporation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• Bulletin of the Korean Chemical Society
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• 제19권9호
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• pp.927-933
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• 1998

Polycrystalline powder of vanadium-doped forsterite (Vδ $Mg_2SiO_4$) was synthesized by the $H_2O_2$-assisted sol-gel method. The vanadium dopant, which was added as VO$(OMe)_3$ in methanol, went through several redox reactions as the sol-gel reaction proceeded. Upon adding VO$(OMe)_3$ to a mixture of $Mg(OMe)_2$ and Si$(OEt)_4$ in methanol, V(V) reduced to V(IV). As hydrolysis reaction proceeded, the V(IV) oxidized all back to V(V). Apparently, some of the V(V) reduced to V(IV) during subsequent gelation by condensation reaction. The V(IV) remained even after heat treatment of the gel in highly oxidizing atmosphere. The crystallization of the xerogel around 880 ℃ readily produced single phase forsterite without any minor phase. Using the polycrystalline powder as feeding stock, single crystals of vanadium-doped forsterite were grown by the floating zone method in oxidizing or reducing atmosphere. The doping was limited in low level because of the high partitioning of the vanadium in liquid phase during melting. The greenish single crystal absorbed visible light of 700∼1100 nm. But, no emission was obtained in near infrared range.

• ETRI Journal
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• 제13권2호
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• pp.21-27
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• 1991

Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from $10^-8$ to $10^-12$ A/$\mum^2$at the electric field of 2MV/cm after rapid thermal annealing(RTA) in $O_2$at $1000^{\circ}C$, while little leakage reduction was observed after furnace annealing in $O_2$ at $500^{\circ}C$. The structural changes of thin tantalum oxide film after annealing were examined using high resolution electron microscope(HREM). The results of HREM show that substantial reduction in the leakage current density after the RTA in $O_2$ can be attributed to crystallization and reoxidation of the thin amorphous tantalum oxide film.

• 한국재료학회지
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• 제15권2호
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• pp.97-105
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• 2005

[ $11\AA$ ] tobermorite$(5CaO{\cdot}6SiO_2{\cdot}5H_2O)$ is synthesized from the mixtures of calcium hydroride and quartz using alumina in a molar ratio $Ca(OH)_2/SiO_2$ of 0.8 at $180^{\circ}C$ for 8 and 24 hrs under saturated steam pressure. The influence of alumina on the formation of $11\AA$ tobermorite was investigated by X-ray diffraction, differential thermal analysis and infrared spectroscopy. $11\AA$ tobermorite containing increasingly larger amounts of aluminum showed a shift of the basal spacing from 11.3 to $11.6\AA$. In general, there was a direct linear relation between the basal spacing and added content of alumina. The differential thermal analysis curves showed that $11\AA$ tobermorite with increasing alumina contents exhibited the exothermic peak at high temperature, namely $11\AA$ tobermorite containing aluminum gave a sharp exothermic peak at temperature around $850\~860^{\circ}C$ in the case of $S_3\~S_5$. The absorption band at $1607\~1620cm^{-1}$ is attributed to the bending vibration of water, and the position of the main O-H stretching and Si-O lattice vibration of $11\AA$ tobermorite at 3500 and $965cm^{-1}$ respectively is not altered. Consequently the existence of alumina accelerates the crystallization of $11\AA$ tobermorite, and that the aluminum ion appears to substitute for the silicon ion in $11\AA$ tobermorite structure. Al-containing tobermorite is distinguished from Al-free tobermorite.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.48-48
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• 2003

미세기공(microporous)을 가진 제올라이트는 다양한 유기질 분리의 촉매제 및 광학, 화학 센서, 기체 분리 등의 고기능 소재로서 크게 주목받고 있으며, 비표면적의 증가, 새로운 기능의 발현 둥으로 최근 들어 나노크기를 갖는 제올라이트 합성에 관한 연구가 활발히 진행되고 있다. 본 연구에서는 기체 분리에 응용하기 위한 제올라이트 분리막 개발에 앞서 분리막 제조에 유리할 것으로 판단되어지는 적합한 크기와 형상을 갖춘 나노크기의 제올라이트를 합성하였으며 그 특성을 분석하였다. 출발물질로서 실리카 원으로는 TEOS, LUDOX AS-40, Cab-O-SIL 등을 사용하였으며, 템프레이트(TPAOH)와 함께 특정조성의 TPAOH/SiO$_2$,/$H_2O$ 겔을 만들었다. 합성시간을 단축할 수 있는 방법의 연구로서 저온하의 2단계 온도 변화법을 적용하였으며, 결정성장속도의 향상을 목적으로 NaH$_2$PO$_4$, H$_2$SO$_4$, NH$_4$OH 등의 결정화 촉진제로 사용하여 수열합성법으로 Silicalite-1를 합성하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.198-199
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• 2006

$SrTa_2O_6$(STA) thin films were fabricated by sol-gel method. The films annealed below $700^{\circ}C$, showed amorphous phase and crystallization phase was observed after annealing over $800^{\circ}C$. From high frequency capacitance-voltage measurements, 24nm thick STA thin film annealed at $900^{\circ}C$, has an EOT of 5.7nm and a dielectric constant of 16. Leakage current characteristics were improved by the insertion of chemical oxide between STA and Si. Leakage current densities are around $3.5{\times}10^{-7}A/cm^2$ at 5V for the structure inserted chemical oxide but $1.4{\times}10^{-6}A/cm^2$ at 5V without chemical oxide.