• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.214-218
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• 2020

In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.123.1-123
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• 2003

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.5
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• pp.423-430
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• 2015

$Cu/ZnO/Al_2O_3$ catalysts for water gas shift (WGS) reaction were synthesized by co-precipitation method with the fixed molar ratio of Cu/Zn/Al precursors as 45/45/10. Copper and zinc precursor were added into sodium carbonate solution for precipitation and aged for 24h. During the aging period, aluminum precursor was added into the aging solution with different time gap from the precipitation starting point: 6h, 12h, and 18h. The resulting catalysts were characterized with SEM, XRD, BET surface measurement, $N_2O$ chemisorption, TPR, and $NH_3$-TPD analysis. The catalytic activity tests were carried out at a GHSV of $27,986h^{-1}$ and a temperature range of 200 to $400^{\circ}C$. The catalyst morphology and crystalline structures were not affected by aluminum precursor addition time. The Cu dispersion degree, surface area, and pore diameter depended on the aging time of Cu-Zn precipitate without the presence of $Al_2O_3$ precursor. Also, the interaction between the active substance and $Al_2O_3$ became more stronger as aging duration, with Al precursor presented in the solution, increased. Therefore, it was confirmed that aluminum precursor addition time affected the catalytic characteristics and their catalytic activities.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.424-425
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• 2006

The effects of reaction temperature and precursor concentration on the microstructure and magnetic properties of ${\gamma}-Fe_2O_3$ nanoparticles synthesized as final products of iron acetylacetonate in chemical vapor condensation (CVC) were investigated. Pure ${\gamma}-Fe_2O_3$ phase was obtained at temperature above $900^{\circ}C$ and crystallite size of ${\gamma}-Fe_2O_3$ nanoparticles decreased with lowering precursor concentration. Also, the coercivity decreases with decreasing crystallite size of nanopowder. The lowest coercivity was 7.8 Oe, which was obtained from the ${\gamma}-Fe_2O_3$ nanopowder sample synthesized at precursor concentration of 0.3M. Then, the crystallite size of ${\gamma}-Fe_2O_3$ nanoparticles was 8.8 nm.

• Progress in Superconductivity
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• v.8 no.1
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• pp.22-26
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• 2006

Total Fluorine content in the precursor solution for MOD processing of YBCO coated conductors can be significantly reduced by synthesizing precursor solution with F-free Y & Cu precursor and Barium trifluoroacetate(TFA). It was shown that crack-free and uniform precursor films were formed after calcinations in humidified oxygen atmosphere. Less than 2 hours are required to finish the calcination process, and XRD measurement shows that $BaF_2,\;CuO,\;and\;Y_2O_3$ are major constituent of calcined precursor films. Film thickness after calcination was measured to be ${\sim}2.8$ um by applying slot-die coating method. In particular, addition of Samarium shows critical current of Ic=226 A/cm-w($Jc=3.4\;MA/cm^2$). Also discussed are recent developments in the reel-to-reel processing using F-free Y & Cu precursor solutions. It is shown that uniform and fast processing route to YBCO coated conductor with high Ic can be provided by employing F-free Y & Cu precursor solutions in MOD process.

• Progress in Superconductivity and Cryogenics
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• v.8 no.3
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• pp.37-40
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• 2006

Oxide buffer layers for YBCO coated conductors were fabricated using MOD processing and development of microstructure and texture were investigated. A $CeO_2$ buffer layers were formed on RABiTS tape. Acetate-based precursor solution was employed to synthesize the precursor solution. Subsequently, the precursor solution was stabilized and modified with triethanolamine. $CeO_2$ precursor gel film was coated and annealed in $Ar/H_2$ atmosphere at high temperature. An annealed $CeO_2$ film shows mixed orientation with high (001) texturing. It was shown that (111) texture of $CeO_2$ layers were enhanced by multiple coating. This degradation was attributed to development of microcracks in the multiply coated $CeO_2$ films. Also discussed are the synthesis and the characterization of $La_2Zr_2O_7$ (LZO) buffer layers on RABiTS tape. A biaxially textured LZO buffer layer was fabricated with MOD processing method using metal alkoxide based precursor solution. It was shown that the LZO film were epitaxially grown on RABiTS tape and crack-free & uniform surface was obtained after annealing in $Ar/H_2$ atmosphere.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.193-197
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• 2005

CuO has been synthesized using the layered organic-inorganic hybrids, $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$ as precursor. The simple thermal decomposition of $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$ is used without any external organic templates. This method provides large-scale production at a low cost of the single-crystalline CuO particles. The morphology of CuO aggregated particles is strongly dependent on structure of the precursor.

• Progress in Superconductivity and Cryogenics
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• v.10 no.1
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• pp.1-5
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• 2008

The effect of $BaCeO_3$ doping on the critical current density of YBCO film by TFA-MOD method was studied. $BaCeO_3$ doping was made by two method; one is direct addition of $BaCeO_3$ nano-sized powder prepared by citrate process followed by grinding with planetary ball mill for 10 hours. Another is addition of Ba-Ce precursor solution prepared with Ba-acetate and Ce acetate dissolved in TFA to the YBCO-TFA precursor solution. The film was made by standard dip coating and heat treatment process with conversion temperature of $790^{\circ}C$ in 1000 ppm oxygen containing moisturized Ar gas atmosphere. The direct addition of $BaCeO_3$ powder resulted in YBCO film with good epitaxial growth and no evidence of second phase formation. The addition through precursor solution resulted in the increase of critical current density upto 30 at% doping and uniform dispersion of $BaCeO_3$ fine inclusion was confirmed by SEM-EDX.

• The Journal of the Convergence on Culture Technology
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• v.9 no.3
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• pp.593-599
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• 2023

Nickel oxide (NiO) nanoparticles were successfully synthesized by a simple liquid phase process for producing ceramics powder using a precursor impregnated with a nickel(II) nitrate hexahydrate aqueous solution in an industrial pulp. The microfibrile structure of the precursor impregnated with nickel nitrate hexahydrate aqueous solution was confirmed by scanning electron microscope (SEM), and the crystal structure and particle size of nickel oxide (NiO) particles produced as the heat treatment temperature of the precursor were analyzed by X-ray diffraction (XRD) and SEM. As a result, it was confirmed through XRD and SEM analysis that the temperature at which the organic material of the precursor is completely thermally decomposed was 495-500℃, and the size and crystallinity of the nickel oxide particles produced increased as the heat treatment temperature increased. The size of the nickel oxide particles obtained by heat treatment at 500-800℃ for 1 hour was 50-200 nm. It was confirmed by XRD and SEM analysis that a NiO crystal phase was formed at a heat treatment temperature of 380℃, only a single NiO phase existed until 800℃.