• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.295-298
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• 2003

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3-V_2O_5$. DTA, XRD and SEM were used to study and characterize BaO-ZnO-$B_2O_3-V_2O_5$ glasses. PbO free paste developed at this paper has thermal expansion of $74{\times}10^{-7}/^{\circ}C$, DTA transformation point of $460^{\circ}C$, and firing condition of $560^{\circ}C$, 10min.

• 미생물학회지
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• 제41권1호
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• pp.13-17
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• 2005

본 연구에서는 이 전 연구에서 단일 탄소원과 질소원 및 에너지원으로 aniline을 이용하는 Delftia sp. JK-2에서 분리, 정제된 바 있는 C2,3O의 N-말단 아미노산과 DNA 서열을 분석하였다. Aniline에서 배양한 Delftia sp. JK-2에서 분리된 약 35kDa의 C2,3O의 N-말단 아미노산 서열을 분석 한 결과 $^1MGVMRIGHASLKVMDMDAAVRHYENV^{26}$로 Pseudomonas sp. AW-2와 Comamonas sp. JS765의 C2,3O와 일치하는 것으로 나타났다. 위에서 확인된 아미노산 서열을 바탕으로 제작된 primer와 JK-2의 total genomic DNA를 기질로 사용하여 PCR을 수행한 결과 약 950 bp의 유전자 증폭산물을 획득하였다. 이 증폭산물 중 정확히 확인된 890 bp의 염기서열을 분석한 결과 Delftia JK-2의 C2,3O유전자 염기서열은 Pseudomonas su. AW-2의 C2,3O와 일치하였으며 Comamonas sp. Js765의 C2,3O와 $97\%$의 높은 상동성을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.128-129
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• 2008

The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.371-374
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• 2000

The electrochemical properties of LiM $n_2$ $O_4$as a cathode and an anode for the lithium secondary battery were evaluated. When LiM $n_2$ $O_4$ material was used as the cathode with the current collector of aluminum, the 1st specific capacity and the 1st Ah efficiency in LiM $n_2$ $O_4$/lithium cell were 123 mAh/g and 91.7%, respectively The anodic properties of LiM $n_2$ $O_4$ material was also evaluated in the LiM $n_2$ $O_4$/1ithium cell with the current collector of copper. It showed that the LiM $n_2$ $O_4$ was useful as the anode for the lithium secondary battery. During the 1st discharge, a potential plateau was observed at the potential of 0.3 $V_{Li}$ Li+/. The 1st specific charge capacity and the 1st specific discharge capacity were 790 mAh/s and 362 mAh/g, respectively. Therefore, the 1st Ah efficiency was 46%. The discharge capacity was gradually faded with the charge-discharge cycling to about 50th cycles. Thereafter, the discharge capacity was stabilized to about 110 mAh/g.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2007년도 제29회 추계학술대회논문집
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• pp.389-392
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• 2007

별도의 가압장치가 없이 산화제탱크 내에 저장된 $N_2O$액체산화제가 공급될 때 액체에서 기체로의 상변화를 고려하여 $N_2O$액체 산화제의 유량공급특성을 예측하였다. 보다 정확한 산화제 공급특성을 계산하기 위해 산화제의 압력과 온도에 따른 $N_2O$의 물성치 변화를 고려하였으며 오리피스 형상과 토출계수 관계식을 이용하여 산화제 유량을 계산하였다. 그리고 산화제 공급에 따른 산화제탱크 내의 압력변화를 측정하고 해석결과와 비교하였다.

• 전자공학회논문지A
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• 제29A권4호
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• pp.22-27
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• 1992

The cyclic voltammogram characteristics at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics/(($10^{-3}$M KCI + p-Si powders) and /(($10^{-4}$M CsNO$_3$ + n-GaAs powders) suspension interfaces have been studied using the microelectrophoresis and the cyclic voltammetric method. The negatively charged ions are specifically absorbed on the virgin and the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics surfaces. The zeta potentials of the p-Si and n-GaAs colloidal semiconductors are + 41mV and -44.8mV, respectively. The magnetization effects act as potential barriers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The positivelely charged p-Si and the negatively charged n-GaAs colloidal semiconductors act as potential barriers at the virgin SrO${\cdot}6Fe_{2}O_{3}$ interfaces. On the other hand, the charged p-Si and n-GaAs colloidal semiconductors act as potential barrier scavengers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The magnetization effects and the charged colloidal semiconductor effects are irreversible and interdependent.

• 전기전자학회논문지
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• 제27권4호
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• pp.399-404
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• 2023

본 논문에서는 3D NAND Flash memory의 O/N/O(Oxide/Nitride/Oxide) 구조와 blocking oxide를 ferroelectric material로 대체한 O/N/F(Oxide/Nitride/Ferroelectric) 구조의 current path를 분석했다. O/N/O 구조는 V_read가 인가되면 neighboring cell의 E-field로 인해 current path가 channel 후면에 형성된다. 반면 O/N/F 구조는 ferroelectric material의 polarization으로 인해 electron이 channel 전면으로 이동하여 current path가 전면에 형성된다. 또한 channel thickness와 channel length에 따른 소자 특성을 분석했다. 분석 결과 O/N/F 구조의 전면 electron current density 증가는 O/N/O 구조보다 2.8배 더 높았고 O/N/F 구조의 전면 electron current density 비율이 17.7% 높았다. 따라서 O/N/O 구조보다 O/N/F 구조에서 전면 current path가 더 효과적으로 형성된다.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• Journal of Korean Society for Atmospheric Environment
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• 제17권E3호
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• pp.109-115
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• 2001

Acidic air pollutants were collected to characterize indoor air quality at a private house in Seoul during the spring period. All indoor and outdoor samples were measured simultaneously using an annular denuder system. The data set was collected on twelve different days with a 24-hr sampling period in April and May 1997. The chemical species measured were HN $O_3$, HN $O_2$, S $O_2$ and N $H_3$in the gas phase and P $M_{2.5}$ (dp 2.5 ${\mu}{\textrm}{m}$), S $O_4$$^{2-}$, N $O_3$$^{[-10]}$ and N $H_4$$^{+}$ in the particulate phase. Indoor concentrations of HN $O_2$, N $H_3$, and P $M_{2.5}$ were greater than outdoor levels. However, indoor concentrations of HN $O_3$, S $O_2$, N $O_3$$^{[-10]}$ and N $H_4$$^{+}$ were less than those found from outdoors. In the case of S $O_4$$^{2-}$, the indoor and outdoor concentrations were similar. Indoor concentrations of P $M_{2.5}$ , S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ were dependent upon the outdoor concentrations. A tracer-gas decay technique with sulfur hexafluoride (S $F_{6}$ ) as the tracer gas was used to estimate the air exchange rate of a private home in the spring. The average air exchange rate was computed to be 2.87 h $r^{-1}$ .X> .