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Process Characteristics of SiOx and SiOxNy Films on a Gas Barrier Layer using Facing Target Sputtering (FTS) System

FTS 장치를 이용한 가스 차단막용 SiOx 및 SiOxNy 박막의 공정특성

  • 손진운 (울산대학교 공과대학 전기전자정보시스템공학부) ;
  • 박용진 (대구가톨릭대학교 전자공학과) ;
  • 손선영 (대구가톨릭대학교 전자공학과) ;
  • 김화민 (대구가톨릭대학교 전자공학과)
  • Published : 2009.12.01

Abstract

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

Keywords

References

  1. 김지환, 조도현, 손선영, 김화민, 김종재, '플렉서블 디스플레이용 저온공정을 갖는 대향타겟식 스퍼터링 장치를 이용한 $ZrO_2$ 가스 차단막의 특성', 전기전자재료학회논문지, 22권, 5호, p. 425, 2009 https://doi.org/10.4313/JKEM.2009.22.5.425
  2. W. T. Li, R. Boswell, M. Samoc, A. Samoc, and R. P. Wang, 'The effect of defects on the optical nonlinearity of thermally poled $SiO_{x}$ thin films', Thin Solid Films, Vol. 516, No. 30, p. 5474, 2008 https://doi.org/10.1016/j.tsf.2007.07.027
  3. A. G. Erlat, B. M. Heny, J. J. Ingram, D. B. Moutain, A. McGuigan, R. P. Howson, C. R. M. Grovenor, G. A. D. Briggs, and Y. Tsukahara, 'Characterization of aluminum oxynitride gas barrier films', Thin Solid Films, Vol. 388, No. 1-2, p. 78, 2001 https://doi.org/10.1016/S0040-6090(01)00836-7
  4. A. G. Erlat, B. M. Heny, J. J. Ingram, C. R. M. Grovenor, G. A. D. Briggs, R. J. Chater, and Y. Tsukahara, 'Mechanism of water vapor transport through PET/$AlO_{x}N_{y}$ gas barrier films', J. Phys. Chem. B, Vol. 108, No. 3, p. 883, 2004 https://doi.org/10.1021/jp036244y
  5. S. Takada, 'Relation between optical property and crystallinity of ZnO thin films prepared by RF magnetron sputtering', J. Appl. Phys., Vol. 73, No. 10, p. 4739, 1993 https://doi.org/10.1063/1.354091
  6. A. Gruniger and Ph. Rudolf von Rohr, 'Influence of defects in $SiO_{x}$ thin films on their barrier porperties', Thin Solid Films, Vol. 459, No. 1-2, p. 308, 2004 https://doi.org/10.1016/j.tsf.2003.12.146
  7. 김건희, 금민종, 김한기, 손인환, 장경욱, 이원재, 최형욱, 박용서, 김경환, 'FTS법을 이용한 ITO 박막의 제작', 전기전자재료학회논문지, 17권, 11호, p. 1230, 2004 https://doi.org/10.4313/JKEM.2004.17.11.1230
  8. 배강, 왕태현, 손선영, 김화민, 홍재석, '대향타겟식 스퍼터링 장치의 공정 조건에 따른 $SiO_{x}$ 가스 차단막의 특성', 전기전자재료학회논문지, 22권, 7호, p. 595, 2009 https://doi.org/10.4313/JKEM.2009.22.7.595
  9. Y. Hoshi, H.-O. Kato, and K. Funatsu, 'Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering', Thin Solid Films, Vol. 445, No. 2, p. 245, 2003 https://doi.org/10.1016/S0040-6090(03)01182-9
  10. L.-N. He and J. Xu, 'Properties of amorphous $SiO_2$ films prepared by reactive RF magnetron sputtering method', Vacuum, Vol. 68, No. 2, p. 197, 2003 https://doi.org/10.1016/S0042-207X(02)00388-3
  11. J. Shim, H. G. Yoon, S.-H. Na, I. Kim, and S. Kwak, 'Silicon oxynitride gas barrier coatings on poly(ether sulfone) by plasma- enhanced chemical vapor deposition', Surf. Coat. Tech., Vol. 202, No. 13, p. 2844, 2008 https://doi.org/10.1016/j.surfcoat.2007.10.020
  12. Permatran-W$^{\circledR}$, Model 3/33 Operator's Manual, MOCON, Inc
  13. 김광호, 이주원, 김영철, 주병권, 김재경, '유기 EL 보호층으로 적용하기 위한 무기 복합 박막의 투습율 특성 연구', 전기전자재료학회논문지, 17권, 4호, p. 432, 2004 https://doi.org/10.4313/JKEM.2004.17.4.432