대기오염은 인간의 건강에 중요한 영향을 미칠뿐 아니라 공업적으로도 많은 해를 초래하고 있다. 그중 한가지 예가 접촉부품에 대한 것을 열거할 수 있다. 일반적으로 모든 금속재 부품에 대해서도 같은 영향을 주나 접촉부품에서는 접촉저항 특성을 중요시하기 때문에 대기오염의 영향은 직접적으로 민감하게 미친다고 볼 수 있다. 접촉부품은 전기회로를 개폐, 절환 또는 이탈시키는 작용을 하며, 크게 나누어 개폐, 정지및 접동등 세가지 형식으로 분류할 수 있다. 이러한 견지에서 대부분의 전자장치및 전기기기에는 접촉부품이 어떠한 형태로서든지 사용하게 되며, 또한 중요한 기능과 역할을 담당하고 있음을 알 수 있다. 이러한 접촉부품에서 접점의 성능은 일반적으로 접촉저항특성, 융착특성 및 소모전이 특성 등 여러 특성으로 요약할 수 있으며 특히 소형화의 경향이 있는 접촉부에 대해서는 접촉저항특성이 중요한 요소가 된다. 일반용의 금속과 같은 과정으로 접촉부금속도 주위 분위기의 기체와 반응을 하여 접촉면에 여러 오염피막을 발생시킨다. 이러한 오염피막은 일반적으로 높은 전기저항을 표시하기 때문에 접촉저항특성을 현저하게 나쁘게 할 것이다. 이러한 입장에서 정밀하고 신뢰성 있어야 할 접촉부품이 대기오염으로 인하여 전기적성질이 저하되어 예기치 못하였든 사고발생을 추정해야 할 시기가 우리나라에도 도래한 것 같으며 공업단지내의 공장에 종사하는 기술자는 적어도 이러한 문제를 고려해야 하겠기애 몇가지 사항에 대하여 간단히 기술하고자 한다.

The effective ionization coefficient in $SF_{6}$/$N_{2}$ mixtures was attempted to derive from the pure gases. Measurements of static breakdown voltage were made under the uniform field at pressures up to 4 bar in order to compare with the results obtained from this assumption. The relative performance of $SF_{6}$/$N_{2}$ mixtures to pure $SF_{6}$ was also investigated. The effect of surface roughness on discharge thresholds in $SF_{6}$/$N_{2}$ mixtures was calculated employing the simplified model and mesurements of breakdown voltages for a gap with an artificial protrustion were also made. The experimental results show that the effective ionization coefficient in gas mixtures can not be reliably estimated from the values measured for the pure gases. Therefore, basic parameters for $SF_{6}$/$N_{2}$ mixtures must be measured by investigation of the mixtures themselves. The relative performance of mixtures to pure $SF_{6}$ could be considered with the values of pR.

Total number of resonant modes in a microwave oven cavity may be maximized for a given frequency bandwidth to obtain more uniform power distribution by choosing proper size of the cavity. The total number of modes is calculated for a dielectrically loaded rectangular cavity and its size is suggested here for which the change in the number of modes is less sensitive to the change of dielectric layer thickness and its total number of modes is maximized in a given range of cavity sizes. A prove coupled rectangular cavity is constructed and the total existing modes are measured to see the change of modes depending on the dielectric layer thickness and the cavity size. Surface wave mode existing in the dielectric layer is confirmed by measuring Q and the input impedance of the cavity for this mode, which closely compares with the calculation.

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.