한국전자통신학회논문지 (The Journal of the Korea institute of electronic communication sciences)

한국전자통신학회 (Korea Institute of Electronic Communication Science)
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잔차 오차 최소에 의한 HEMT의 외인성 파라미터 추출

Extraction of Extrinsic Circuit Parameters of HEMT by Minimizing Residual Errors

  • 전만영 (동양대학교 정보통신공학과)
  • 투고 : 2014.06.12
  • 심사 : 2014.08.11
  • 발행 : 2014.08.31
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초록

본 연구에서는 핀치오프 된 cold-FET에서 게이트와 드레인 패드를 디임베딩하여 얻어지는 Z-파라미터와 게이트와 드레인 패드 커패시턴스를 제외한 핀치오프 된 cold-FET의 나머지 파라미터에 의해 모델링되는 Z-파라미터 사이의 잔차 오차를 최소화함으로써 HEMT의 모든 외인성 파라미터를 추출하는 기법을 제시한다. 제시된 기법을 사용하면 게이트와 드레인 모조패드의 추가적 제작 없이 게이트와 드레인 패드의 커패시턴스 값뿐 아니라 나머지 외인성 파라미터 값 모두를 성공적으로 추출할 수 있다.

This study presents a technique for extracting all the extrinsic parameters of HEMTs by minimizing the residual errors between a pinch-off cold-FET's gate and drain pad de-embedded Z-parameters and its modeled Z-parameters calculated by the cold-FET's remaining parameters. The presented technique allows us to successfully extract the remaining extrinsic parameter values as well as the gate and drain pad capacitance value without the additional fabrications of the gate and drain dummy pad.

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참고문헌

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