Journal of the Korean Electrochemical Society (전기화학회지)

The Korean Electrochemical Society (한국전기화학회)
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Cu Metallization for Giga Level Devices Using Electrodeposition

전해 도금을 이용한 기가급 소자용 구리배선 공정

  • Kim, Soo-Kil (Center for Fuel Cell Research, Korea Institute of Science and Technology) ;
  • Kang, Min-Cheol (School of Chemical and Biological Engineering, Seoul National University) ;
  • Koo, Hyo-Chol (School of Chemical and Biological Engineering, Seoul National University) ;
  • Cho, Sung-Ki (School of Chemical and Biological Engineering, Seoul National University) ;
  • Kim, Jae-Jeong (School of Chemical and Biological Engineering, Seoul National University) ;
  • Yeo, Jong-Kee (LG Chem Ltd.)
  • 김수길 (한국과학기술연구원 연료전지연구단) ;
  • 강민철 (서울대학교 화학생물공학부) ;
  • 구효철 (서울대학교 화학생물공학부) ;
  • 조성기 (서울대학교 화학생물공학부) ;
  • 김재정 (서울대학교 화학생물공학부) ;
  • 여종기 (LG화학)
  • Published : 2007.05.28
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Abstract

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet the requirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since copper, which has low electrical resistivity and high resistance to degradation, has different electrical and material characteristics compared to aluminum alloy, new related materials and processes are needed to successfully fabricate the copper interconnection. In this review, some important factors of multilevel copper damascene process have been surveyed such as diffusion barrier, seed layer, organic additives for bottom-up electro/electroless deposition, chemical mechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

반도체 소자의 고속화, 고집적화, 고신뢰성화에 대한 요구는 알루미늄 합금으로부터 구리로의 배선 물질의 변화를 유도하였다. 낮은 비저항과 높은 내열화성을 특징으로 하는 구리는 그 전기적, 재료적 특성이 알루미늄과 상이하여 배선 형성에 있어 새로운 주변 재료와 공법을 필요로 한다. 본 총설에서는 상감공정(damascene process)을 사용하는 다층 구리 배선 공정에 있어 핵심이 되는 구리 전해 도금(electrodeposition) 공정을 중심으로 확산 방지막(diffusion barrier) 및 도전층(seed layer), 바닥 차오름(bottom-up filling)을 위한 전해/무전해 도금용 유기 첨가제, 화학적 기계적 평탄화(chemical mechanical polishing) 및 표면 보호막(capping layer) 기술 등의 금속화 공정에 대한 개요와 개발 이슈를 소개하고 최근의 연구 결과를 통해 구리 배선 공정의 최신 연구 동향을 소개하였다.

Keywords

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