• Title, Summary, Keyword: Device

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Comparative Analysis of PBTI Induced Device Degradation in Junctionless and Inversion Mode Multiple-Gate MOSFET (PBTI에 의한 무접합 및 반전모드 다중게이트 MOSFET의 소자 특성 저하 비교 분석)

  • Kim, Jin-Su;Hong, Jin-Woo;Kim, Hye-Mi;Lee, Jae-Ki;Park, Jong-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.1
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    • pp.151-157
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    • 2013
  • In this paper, a comparative analysis of PBTI induced device degradation in nanowire n-channel junctionless and inversion mode Multiple-Gate MOSFET(MuGFETs) has been performed. It has been observed that the threshold voltage is increased after PBTI stress and the threshold voltage variation of junctionless device is less significant than that of inversion mode device. However the degradation rate of junctionless device is less significant than that of inversion mode device. The activation energy of the device degradation is larger in inversion mode device than junctionless device. In order to analyze the more significant PBTI induced device degradation in inversion mode device than junctionless device, 3-dimensional device simulation has been performed. The electron concentration in inversion mode device is equal to the one in junctionless device but the electric field in inversion mode device is larger than junctionless device.

The Analysis and Strengthening Method of Export Competitive Power of Medical Device Industry - With Respect to Medical Device Industry in Gangwon Area (의료기기산업의 수출경쟁력 분석 및 강화방안 -강원지역 의료기기산업을 중심으로-)

  • Lee, Kang-Bin
    • THE INTERNATIONAL COMMERCE & LAW REVIEW
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    • v.45
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    • pp.191-238
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    • 2010
  • The purpose of this paper is to make research on the trend of the worldwide medical device market, the trend of the medical device market in the major foreign countries, the present status of the medical device industry in Korea and Gangwon area, the present status of export competitive power and the SWOT analysis of competitive power of the medical device industry in Gangwon area, and the strengthening methods of export competitive power of the medical device industry in Gangwon area. As the research method, the questionaire for the strengthening of export competitive power of the medical device industry in Gangwon area was carried out from August 13 to Otober 22, 2009. The worldwide medical device market in 2008 is estimated at USD 210.2 billion, with the United States being the largest market, followed closely by Japan and Western Europe. In 2006, the worldwide export amount of medical devices recorded USD 121.1 billion and the worldwide import amount of medical devices recorded USD 126.3 billion. As of the end of 2008, the number of Korea's medical device manufacturers expanded to 1,726. The production amount of Korea's medical device industry in 2008 recorded 2,525 billion won, and the domestic market volume of medical devices in 2008 recorded 3,618 billion won. Korea's export amount of medical devices in 2008 recorded USD 1,132 million and recorded a 9.67% growth compared to the previous year, and the import amount of medical devices recorded USD 2,123 million and recorded a 1.43% reduction compared to the previous year. As of the end of 2008, the number of Gangwon area's medical device manufacturers expanded to 81. The production amount of Gangwon area's medical industry in 2008 recorded 380 billion won, and Gangwon area's export amount of medical devices recorded USD 269 million and recorded a 0.25% reduction compared to the previous year, and the import amount of medical devices recorded USD 3 million and recorded a 39.63% reduction compared to the previous year. According to the result analysis of the questionaire for the strengthening of export competitive power of medical device industry in Gangwon area(August 13~October 22, 2009), the competing country of the export medical device is the United States being the highest ranking. Comparing to the collective competitive power level 100 of the competing country, the collective competitive level of the export medical device is 60 below and 70-80 below being the highest ranking. Comparing to the quality level 100 of the United States, EU and Japan, the quality level of the export medical device is 80-90 below being the highest ranking. Comparing to the design level 100 of the United States, EU and Japan, the design level of the export medical device is 90-100 below being the highest ranking. Comparing to the technology level 100 of the United States, EU and Japan, the technology level of the export medical device is 80-90 below being the highest ranking. According to the SWOT analysis of competitive power of medical device industry in Gangwon area, the strength is the abundant expert manpower of the medical device in Wonju area. The weakness is the fragility of the brand recognition of the medical device industry. The opportunity is the demand increase of the new medical device owing to the advanced age of population. The threat is the difficulty of entry into overseas market owing to the request of the new specification certification of the medical device. In order to strengthen the export competitive power of the medical device industry in Gangwon area, the following measures should be taken by the government, local self-government body, related organization and medical device industry : the development of new technology and design, the enhancement of brand recognition. the acquisition of the foreign specification certification, the building of overseas distribution channel and after sales service channel, the positive participation in overseas medical device exhibition and opening of medical device exhibition, the training of expert manpower, the strengthening of overseas marketing, and the application of FTA and the establishment of counter measures against FTA. In conclusion, the medical device industry in Gangwon area has the difficulty in the entry into the overseas market owing to the shortage of overseas marketing capability. Therefore, the government and local self-government body should make the intensive and systematical support for overseas marketing of the medical device industry. For the support of overseas marketing, the government and local self-government body should provide positively the support of expenses for the acquisition of foreign specification certification, the support of participation in the overseas medical device exhibition, the despatch of market development mission, the increase of the support amount for R&D investment fund, and the training of expert manpower of medical devices.

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SAW Device Reader Platform Using FPGA Implementation (FPGA를 이용한 SAW Device Reader Platform 구현)

  • Jeong, Yong-Hyun;Son, Young-Tae;Kim, Young-Kil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.12
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    • pp.2805-2810
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    • 2010
  • The Passive Device called SAW Device of the ID Tag or a small sensor that can replace all of MEMS technology Micro Device. When using SAW Device will be able to replace that sensor control the power needed or separate space. Enlarge the scope of this advantage to use as a platform for various SAW Device is required. However, the current SAW Sensor development has many, but SAW Sensor that can leverage the platform's development is sketchy. Therefore, this paper implements SAW Reader can be measured in SAW Device Using an FPGA more simple and efficient Reader platform.

Low Voltage Program/Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer

  • Choe, Jeong-Dong;Yeo, Kyoung-Hwan;Ahn, Young-Joon;Lee, Jong-Jin;Lee, Se-Hoon;Choi, Byung-Yong;Sung, Suk-Kang;Cho, Eun-Suk;Lee, Choong-Ho;Kim, Dong-Won;Chung, Il-Sub;Park, Dong-Gun;Ryu, Byung-Il
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.2
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    • pp.68-73
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    • 2006
  • We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.