Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Gate Insulator 두께 가변에 따른 TFT소자의 전기적 특성 비교분석

  • 김기용 (성균관대학교 정보통신공학부) ;
  • 조재현 (성균관대학교 정보통신공학부) ;
  • 이준신 (성균관대학교 정보통신공학부)
  • Published : 2009.11.12
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Abstract

We fabricated p-channel TFTs based on poly Silicon. The 35nm thickness silicon dioxide layer structure got higher $I_{on}/I_{off}$ ratio, field-effect Mobility and output current than 10nm thickness. And 35nm layer showed low leakage current and threshold voltage. So, 35nm thickness silicon dioxide layer TFTs are faster reaction speed and lower power consumption than 10nm thickness.

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