Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.40-40
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- 2009
GOLDD 구조를 갖는 LTPS TFT 소자의 전기적 특성 비교분석
- Published : 2009.11.12
Abstract
The electrical characteristic of the conventional self-aligned polycrystalline silicon (poly-Si) TFTs are known to present several undesired effects such as large leakage current, kink effect and hot-carrier effects. In this paper, LTPS TFTs with different GOLDD length were fabricated and investigated the effect of the GOLDD. GOLDD length of 1, 1.5 and