• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1229-1232
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• 2014

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.766-769
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• 2008

Zinc oxide (ZnO) nanowires were prepared on Si substrates by a thermal evaporation method at different temperatures and $O_2$ pressure. Microstructural analysis of the obtained ZnO nanowires was performed by using transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Phase analysis was done using X-ray diffraction(XRD). As the deposition temperature and oxygen pressure were increased, the diameter and length of ZnO nanowires had a tendency to increase. Based on TEM and XRD analyses, the nanowires are single crystalline in nature and consist of a single phase. According to the measurements, the ZnO nanowires grown at 1100$^{\circ}C$, Ar 50 sccm, $O_2$ 10 sccm have good properties.

• 한국재료학회지
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• 제25권7호
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• pp.358-363
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• 2015

We present an excellent detection for nitrogen monoxide (NO) gas using polycrystalline ZnO wire-like films synthesized via a simple method combined with sputtering of Zn metallic films and subsequent thermal oxidation of the sputtered Zn nanowire films in dry air. Structural and morphological characterization revealed that it would be possible to synthesize polycrystalline hexagonal wurtzite ZnO films of a wire-like nanostructure with widths of 100-150 nm and lengths of several microns by controlling the sputtering conditions. It was found from the gas sensing measurements that the ZnO wire-like thin film gas sensor showed a significantly high response, with a maximum value of 29.2 for 2 ppm NO at $200^{\circ}C$, as well as a reversible fast response to NO with a very low detection limit of 50 ppb. In addition, the ZnO wire-like thin film gas sensor also displayed an NO-selective sensing response for NO, $O_2$, $H_2$, $NH_3$, and CO gases. Our results illustrate that polycrystalline ZnO wire-like thin films are potential sensing materials for the fabrication of NO-sensitive high-performance gas sensors.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• 한국재료학회지
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• 제30권8호
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• pp.421-425
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• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

• Advances in nano research
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• 제12권6호
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• pp.593-603
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• 2022

The critical buckling temperature rise of a newly proposed piezoelectrically active sandwich plate (ASP) has been investigated in this work. This structure includes a porous polymeric layer integrated between two piezoelectric nanocomposite layers. The piezoelectric material is made of a passive polymeric material that is activated by lead-free nanowires (NWs) of zinc oxide (ZnO) embedded inside the matrix. In both nanocomposite layers and porous core, functional graded (FG) patterns have been considered for the distributions of ZnO NWs and voids, respectively. By adopting a higher-order theory of plates, the governing equations of thermal buckling are obtained. This set of equations is then treated using an extended mesh-free solution. The effects of plate dimensions, porosity states, and the nanowire parameters have been investigated on the critical buckling temperature rises of the proposed lightweight ASPs with different boundary conditions. The results disclose that the use of porosities in the core and/or mixing ZnO NWs in the face sheets substantially arise the critical buckling temperatures of the newly proposed active sandwich plates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.429.2-429.2
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• 2014

ZnO nanowire is known as synthesizable and good mechanical properties. And, stimuli-responsive polymer is widely used in the application of tunable sensing device. So, we combined these characteristics to make precise tunable sensing devise. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using nanosphere template with various conditions via hydrothermal process. Also, pH-temperature dependant tuning ability of nanostructure was studied. The brief experimental scheme is as follow. First, Zno seed layer was coated on a si wafer ($20{\times}20mm$) by spin coater. And then $1.15{\mu}m$ sized close-packed PS nanospheres were formed on a cleaned si substrate by using gas-liquid-solid interfacial self-assembly method. After that, zinc oxide nanowires were synthesized using hydrothermal method. Before the wire growth, to specify the growth site, heat treatment was performed. Finally, NIPAM(N-Isopropylacrylamide) was coated onto as-fabricated nanostructure and irradiated by UV light to form the PNIPAM network. The morphology, structures and optical properties are investigated by FE-SEM(Field Emission Scanning electron Microscopy), XRD(X-ray diffraction), OM(Optical microscopy), and WCA(water contact angle).

• Journal of the Optical Society of Korea
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• 제19권5호
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• pp.508-513
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• 2015

A capacitive-type touch screen panel (TSP) composed of silver nanowire (AgNW) crossing electrodes and transparent bridge structures was fabricated on a polycarbonate film. The transparent bridge structure was formed with a stack of Al-doped ZnO (AZO) electrodes and SU-8 insulator. The stable and robust continuity of the bridge electrode over the bridge insulator was achieved by making the side-wall slope of the bridge insulator low and depositing the conformal AZO film with atomic layer deposition. With an extended exposure time of photolithography, the lower part of the SU-8 layer around the region uncovered by the photomask can be exposed enough to the UV light scattered from the substrate. This leads to the low side-wall slope of the bridge insulator. The fabricated TSP sample showed a large capacitance change of 22.71% between with and without touching. Our work supplies the technological clue for ensuring long-term reliability to the highly flexible and transparent TSP made by using conventional fabrication processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.281-281
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• 2008

최근 높은 비표면적, 우수한 결정성, 나노스케일의 크기 등 다양한 물리 화학적 특성을 지닌 1차원 나노구조체를 이용한 가스센서 연구가 활발히 진행되고 있다. 가스센서는 네트워크 된 나노선들 이용하여 벌크, 박막 보다 극대화된 비표면적으로 가스 감도와 반응 속도를 향상시킬 수 있었다. 촉매 첨가를 위해 Acetylacetone 용액 7 ml에 10 mM이 되도록 Pt 분말을 첨가하여 촉매용액을 제조하였다. 마이크로피펫을 이용하여 미량을 센서의 감응체 부문에 뿌려 대기 중에서 건조한 후 센서의 감도를 측정하였다. 측정은 $250^{\circ}C$에서 일산화탄소 가스 500 ppm의 가스농도로 촉정하였을 때 촉매가 첨가된 센서가 70% 이상의 개선된 감도를 나타내었다. 이는 나노선에 분산된 촉매에 주입되는 가스가 흡착되고 다시 표면의 산소와 반응하여 전기전도도를 변화시키는 것으로 보인다. 첨가된 촉매에 대한 영향을 분석하기 위해 AES, XRD, FT-IR, TEM 등의 분석을 실시하였다.

• 한국재료학회지
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• 제28권11호
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• pp.671-679
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• 2018

Finite element analyses are carried out to understand the piezoelectric behaviors of ZnO nanowires. Three different types of ZnO nanowires, with aspect ratios of 1:2. 1:31, and 1:57, are analyzed for uniaxial compression, pure bending, and buckling. Under the uniaxial compression with a strain of $1.0{\times}10^{-4}$ as the reference state, it is predicted that all three types of nanowires develop the same magnitude of the piezoelectric fields, which suggests that longer nanowires exhibit higher piezoelectric potential. However, this prediction is not in agreement with the experimental results previously reported in the literature. Such discrepancy is understood when the piezoelectric behaviors under bending and buckling are considered. When only the strain field due to bending is present in bending or buckling, the antisymmetric nature of the through-thickness stain distribution indicates that two piezoelectric fields, the same in magnitude and opposite in sign, develop along the thickness direction, which cancels each other out, resulting in a zero net piezoelectric field. Once additional strain contribution due to axial deformation is superposed on the bending, such field cancelling is compensated for due to the axial component of the piezoelectric field. Such numerical predictions seem to explain the reported experimental results while providing a guideline for the design of nanowire-based piezoelectric devices.