Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of ZnO Nanowire Fabricated by Thermal Evaporation Method Depending on Different Temperatures and Oxygen Pressure

Thermal Evaporation법으로 제작한 ZnO 나노선의 온도와 산소유량에 따른 성장 특성

  • 오원석 (충북대학교 신소재공학과) ;
  • 장건익 (충북대학교 신소재공학과)
  • Published : 2008.08.01
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Abstract

Zinc oxide (ZnO) nanowires were prepared on Si substrates by a thermal evaporation method at different temperatures and $O_2$ pressure. Microstructural analysis of the obtained ZnO nanowires was performed by using transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Phase analysis was done using X-ray diffraction(XRD). As the deposition temperature and oxygen pressure were increased, the diameter and length of ZnO nanowires had a tendency to increase. Based on TEM and XRD analyses, the nanowires are single crystalline in nature and consist of a single phase. According to the measurements, the ZnO nanowires grown at 1100$^{\circ}C$, Ar 50 sccm, $O_2$ 10 sccm have good properties.

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References

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