• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.199-204
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• 2016

This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was $32{\mu}m$. The doping concentration of floating island was $5{\times}1,012cm^2$. And the width of floating island was $3{\mu}m$. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and $0.108{\Omega}cm^2$ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

• 해양환경안전학회지
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• 제13권4호
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• pp.113-117
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• 2007

현재 이동용 캐리지에 장착하여 사용하고 있는 용접기의 경우는 용접토치가 고정이 되어 비드 폭이 일정한 부분의 직선용접에 주로 사용되고 있다. 이러한 용접기는 비드 폭이 일정 폭 이상으로 큰 경우는 용접작업이 복잡해지고 여러 번 반복해서 위치를 바꾸어가며 용접을 해야 한다. 본 연구에서는 비드 폭이 넓은 곳에서 용접토치를 일정한 폭으로 움직여주는 기능을 갖도록 시스템을 구성하였다. 반자동 캐리지에 용접선 추적센서, 센서이동용 모터 슬라이드, 위치 추적용 로터리 엔코더 및 MCU(80C196KC)와의 인터페이스회로를 설치하여 자동으로 용접선을 추적할 수 있게 설계하고, 용접기의 위빙실험을 하여 그 성능을 실험적으로 확인하였다.

• Current Applied Physics
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• 제18권11호
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• pp.1381-1387
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• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• 한국인터넷방송통신학회논문지
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• 제13권2호
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• pp.47-52
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• 2013

플라즈마 다중모드 간섭 결합기 (MMIC)를 계단형으로 구성하여 전형적인 방법으로 설계된 MMIC 보다 결합길이를 현저하게 줄일 수 있는 새로운 구조가 본 논문에서 제안되었다. 전송폭이 계단형인 플라즈마 MMIC에서 60%의 cross 전력분배율에 대하여, 결합길이는 약 42%가 줄어들었다. 또한, 굴절률 변화에 따른 플라즈마 MMIC의 전력분배율과 결합길이는 약 2~6%로 거의 변화가 없었으나, 전송폭을 변화 시켰을 때 전력분배율과 결합길이는 약 30~40%로 큰 변화를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.37-38
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.16-20
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• 2020

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권1호
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• pp.61-65
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• 2010

Threshold voltage is one of the most important factors in a device modeling. In this paper, analytical method to calculate threshold voltage for recessed channel (RC) MOSFETs is studied. If we know the fundamental parameter of device, such as radius, oxide thickness and doping concentration, threshold voltage can be obtained easily by using this model. The model predicts the threshold voltage which is the result of 2D numerical device simulation.

• 한국광학회지
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• 제26권6호
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• pp.318-321
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• 2015

We demonstrate a frequency-resolved optical grating (FROG) device for measuring the intensity and phase versus time of several-tens-of-picoseconds laser pulses, using a thick nonlinear optical crystal. The huge pulse-front tilt generated by a holographic grating increases the temporal range of the device, which can make a single-shot measurement of laser pulses less than 100 ps in duration. To verify the measurement technique, we generate double pulses using a Michelson interferometer. The measured duration of a single pulse is about 300 fs and the measured maximum delay of two pulses is 60 ps, which implies that the proposed FROG device can measure laser pulses with maximum pulse width of about 120 ps.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.