• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.410-416
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• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.560-564
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• 2006

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C,\;200^{\circ}C,\;100^{\circ}C$, and R.T. by the temperature controller during the deposition. Crystalline and micro-structural characteristics of the films were investigated by XRD and SEM. ZnO films which cooled down naturally or slowly by the temperature controller during the deposition, especially the film were deposited with cooling down from $400^{\circ}C\;to\;200^{\circ}C$ slowly. showed the most outstanding c-axis preferred orientation.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1098-1101
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• 1995

NbTi thin films were prepared on Si wafer and Cu substrate by rf magnetron sputtering in the range of sputtering pressure $3{\times}10^{-2}$torr to $3{\times}10^{-4}$torr at room temperature. The influence of sputtering pressure and substrate type on crystallographic orientation and morphology of NbTi thin films was investigated by using X-ray diffraction(XRD) and scanning electron microscopy(SEM), respectively. And the effect of crystallographic orientation and morphology of NbTi film on electromagnetic behaviors was estimated by measuring critical current in various applied magnetic field. The film morphology changed from porous structure consisting of tapered crystallites to densely deposited film decreasing with sputtering pressure. The change of crystallographic orientation with the sputtering pressure and rf power was calculated from the texture coefficient of(002) plane based on XRD patterns. It was found that a change of texture coefficient of(002) plane increased with decreasing sputtering pressure. From observation of critical current in various applied magnetic field, we have identified that the change of critical current abruptly decrease applying with magnetic field and NbTi film produced at high sputtering pressure does not exhibit superconductivity but at low sputtering pressure shows superconductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.192-193
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• 2006

A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.419-419
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• 2016

High efficiency silicon solar cell requires the textured front surface to reduce reflectance and to improve the light trapping. In case of mono-crystalline silicon solar cell, wet etching with alkaline solution is widespread. However, the alkali texturing methods are ineffective in case of multi-crystalline silicon wafer due to grain boundary of random crystallographic orientation. The acid texturing method is generally used in multi-crystalline silicon wafer to reduce the surface reflectance. However the acid textured solar cell gives low short-circuit current due to high reflectivity while it improves the open-circuit voltage. To reduce the reflectivity of multi-crystalline silicon wafer, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE experimental condition with change of RF power (100W, 150W, 200W, 250W, 300W). During experiment, the gas ratio of SF6 and O2 was fixed as 30:10.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.94-106
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• 1995

A three-dimensional(3D) Monte Carlo simulator for boron ion implantation into <100>single-crystal silicon considering the mask structure has been developed to predict the mask-dependent impurity doping profiles of the implanted boron at low energies into the reduced area according to the trend of a reduction in the size of semiconductor devices. All relevant important parameters during ion implantation have been taken into account in this simulator. These are incident energy, tilt and rotation of wafer, orientation of silicon wafer, presence of native silicon dioxide layer, dose, wafer temperature, ion beam divergence, masking thickness, and size and structure of open window in the mask. The one-dimensional(1D) results obtained by using the 3D simulator have been compared with the SIMS experiments to demonstrate its capabilities and confirem its reliability, and we obtained relatively accurate 1D doping profiles. Through these 3D simulations considering the hole structure and its size, we found the mask effects during boron ion implantation process.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.7 s.184
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• pp.138-145
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• 2006

A nanopatterning technique was proposed and demonstrated for low cost and mass productive process using the scanning probe lithography (SPL) and soft lithography. The nanometer scale structure is fabricated by the localized generation of oxide patterning on the H-passivated (100) silicon wafer, and soft lithography was performed to replicate of nanometer scale structures. Both height and width of the silicon oxidation is linear with the applied voltagein SPL, but the growth of width is more sensitive than that of height. The structure below 100 nm was fabricated using HF treatment. To overcome the structure height limitation, aqueous KOH orientation-dependent etching was performed on the H-passivated (100) silicon wafer. Soft lithography is also performed for the master replication process. Elastomeric stamp is fabricated by the replica molding technique with ultrasonic vibration. We showed that the elastomeric stamp with the depth of 60 nm and the width of 428 nm was acquired using the original master by SPL process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.604-604
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• 2012

기존의 실리콘 이종접합 태양전지는 후면에도 passivation layer인 i-a-Si:H 및 BSF층인 n-a-Si:H가 형성되는 구조를 가지고 있었다. 이러한 구조를 대체하기 위하여 본 연구에서는 실리콘 이종접합 태양전지의 후면 구조에 passivation 층 및 BSF층을 novel material인 Sb증착 및 RTP, laser anneal을 통해 새로운 BSF층 형성하고 태양전지 특성에 대해서 분석하였다. 이를 위해서 carrier lifetime, LIV, DIV 및 QE 등 전기적, 광학적 분석뿐만 아니라 SIMS 분석을 통하여 laser annealing 공정으로 형성된 BSF층의 depth profile 분석도 진행하였다. 또한 wafer orientation에 따른 특성을 분석하기 위하여 (100) 및 (111) wafer를 이용하여 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.798-807
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• 2002

ZnO thin films on Si wafer were deposited by RF magnetron reactive sputter with various RF power, chamber pressure, argon/oxygen gas ratios ana substrate temperatures. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD, AFM, RBS, and electrometer(keithley 617). ZnO films showed a strong c-axis preferred orientation. Surface roughness and resistivity were changed by the argon/oxygen gas ratio. The minimum surface roughness of 12${\AA}$ and maximum resistivity of $10^8\Omega cm$ were achieved at Ar/O$O_2$=0/100.

• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.202-206
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• 2009

Optical images based on the porous silicon exhibiting photoluminescence have been prepared from an electrochemical etching of n-type silicon wafer (boron-doped,<100> orientation, resistivity $1{\sim}10{\Omega}-cm$) by using a beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. This provides the ability to fabricate complex optical encoding in the surface of silicon.