• 제목/요약/키워드: voltage transfer특성

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Zn(II)-Porphyrin LB막의 전기, 화학적 특성에 관한 연구 (Electrical and Chemical characteristics of Zn(II)-Porphyrin Langmuir-Blodgett(LB) Films)

  • 구자룡;이호식;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.752-755
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    • 2002
  • Since Metallo-Porphyrin (MP) is very interesting compound due to its unique electronic and redox properties and it is also chemically and thermally stable, MP has been studied for potential memory and switching devices. In this study, thin films of 5,10,15,20 - Tetrakis - Octadecyloxymethylphenyl - Porphyrin - Zn(II) (Zn-TPP) were prepared by the Langmuir-Blodgett (LB) method and characterized by using UV/vis absorption spectroscopy and cyclic voltammetry. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was $135{\AA}^2$/molecule. The current-voltage (I-V) characteristics of these films were investigated.

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전계자격에 따른 유기박막의 전기 특성 (Electrical Properties of Organic Thin Films by Electric Field Stimulus)

  • 전동규;최영일;김재민;차인수;이경섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.807-809
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    • 1998
  • We give pressure stimulation into organic thin films and detect the induced displacement current, In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(Kapton-Polyimide)/Au and I-V properties of the device is measured from 0(V) to +5(V). The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results.

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자외선 예비전리 KrF 레이저의 방전특성 해석 (Analysis of discharge characteristics of KrF laser system with UV preionization)

  • 최부연;이주희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1989년도 하계종합학술대회 논문집
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    • pp.642-646
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    • 1989
  • We have developed analysis program of discharge chracteristics of KrF laser system with charge transfer type, that studied about deposited energy, nonlinear discharge, and electron number density in the laser tube. With this program, voltagr, current, and deposited energy was calculated 27 KV,32.6 KA,200 MW at total pressure 2 atm and charging voltage 33 KV, respectively. At this condition, circuit parameters are L1=150nH, R1=$0.3{\Omega}$, L2=15nH, R2= $0.3{\Omega}$. In addition, nonlinear discharge resistance and electron number density was calculated ${\infty}{\sim}0.17{\Omega}.1{\times}10^{16}cm^{-3}$, respectively.

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Se와 $Sb_2S_3$를 이용한 광도전막의 제작과 그 특성 (Fabrication and Properties of Photoconductive Multilayer Using Se and $Sb_2S_3$)

  • 오상광;박기철;김건일;김기완
    • 대한전자공학회논문지
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    • 제24권4호
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    • pp.646-651
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    • 1987
  • The photoconductive multilayer composed of glassy, porous, and fine-grained layers was fabdricated with Se and Sb2S3 by vacuum evaporation in order to be used as vidicon target. And its electrical, optical properties were investigatee. The fabrication conditions were as follow: the glassy layer was first deposited to have the thickness of 6500 \ulcornerat the deposition rate of 250\ulcornersec. High photosensitivity(\ulcorner=1) was obtained but its shortcoming was high dielectric constant. Therefore, the porous layer was added to lower dielectric constant and had 7500\ulcornerthick in the argon gas ambikent of 7x10-\ulcorner And the fine-grained layer was formed to prevent secondary electron emission and obtain good resolution. Its thickness was about 1700\ulcorner For the given vidicon target, the light transfer characteristic, that is, photosensitivity (\ulcorner) was measured to be 0.8 at the applied voltage of 25V. The spectral sensitivity was quite similar to that of the human eyes.

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비정질 실리콘 박막 트랜지터 포화전압 대 전류특성의 새로운 모델 (Fabrication and New Model of Saturated I-V Characteristics of Hydrogenerated Amorphous Silicon Thin Film Transistor)

  • 이우선;강용철;양태환;정해인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 추계학술대회 논문집
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    • pp.3-6
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    • 1992
  • A new analytical expression for the saturated I-V characteristics of hydrogenerated amorphous silicon thin film transistors(a-si:H TFT) is presented and experimentally verified. The results show that the experimental transfer and output characteristics at several temperatures are easily modeled. The model is based on three functions obtained from the experimental data of $I_D$ versus $V_G$. Theoretical results confirm the simple form of the model in terms of the device geometry. It was determined that the saturated drain current increased at a fixed gate voltage and the device saturated at increasingly larger drain voltages while the threshold voltages decreased.

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Octa(2-ethylhexyloxy)copper-phthalocyanine LB막의 $NO_2$ 가스 탐지 특성에 관한연구 (A study on the $NO_2$ Gas Detection Characteristics of Octa(2-ethylhexyloxy)copper-phthalocyanine LB Films)

  • 임준석;김영관;김정수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1716-1718
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    • 1996
  • It is well known that the metallophthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as $NO_2$ and also chemically and thermally stable. Therefore, lots of MPcs are studied for the potential chemical sensor for $NO_2$ gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyanine were prepared by Langmuir-Blodgett method and characterized by using UV-VIS spectrascopy and ellipsometry. Transfer condition, film characterization, and preliminary results of current-voltage(I-V) characteristics of these films exposed to $NO_2$ gas as a function of film thickness will be discussed.

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ESD에 의한 반도체소자의 손상특성 (Damage and Failure Characteristics of Semiconductor Devices by ESD)

  • 김두현;김상렬
    • 한국안전학회지
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    • 제15권4호
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    • pp.62-68
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    • 2000
  • Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.

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Octa(2-ethylhexyloxy)copper-phnthalocyanine LB막의 NO$_2$ 가스 탐지 특성에 관한 연구 (A study on the NO$_2$ Gas Detection Characteristics of Octa(2-ethylhexyloxy)copper-phthalocyanine LB films)

  • 임준석;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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    • pp.162-165
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    • 1996
  • It is well shown that the metallophthalocyanine (MPcs) are sensitive to tonic gaseous molecules such as NO$_2$ and also chemically and thermally stable. Therefore, lots of MPcs are studied for the potential chemical sensor for NO$_2$ gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyaninc ware prepared by Langmuir-Blodgett method and characterized by using UV-VIS spectrascopy and cllipsometry. Transfer condition, film characterization, and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$ gas as a function of film thickness will be discusscd.

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multi-stack gate dielectric 구조를 통한 LTPS TFT 특성

  • 백경현;정성욱;장경수;박형식;이원백;유경열;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.200-200
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    • 2010
  • 이 논문에서는 field-effect mobility를 향상시키기 위해 triple-layer (SiNx/SiO2/SiOxNy stack 구조)를 gate dielectric material 로 LTPS TFTs에 적용하였다. 이는 플라즈마 처리 기법과 적층구조의 효과적인 in-situ 공정을 이용하여 interface trap과 mobile charge를 낮추어 높은 이동도의 결과를 생각하고 실험하였다. 실험은 SiO2 gatedielectric과 triple-gate dielectric의 C-V curve를 1 MHz의 주파수에서 측정하였다. 또한 Transfer characteristics를 single SiO2 gatedielectric과 triple-gate dielectric of SiNx/SiO2/SiOxNy를 STA 장비를 이용해 측정하였다. 위의 측정을 통해 threshold voltage, mobility, subtheshold swing, driving current, ON/OFF current ratio를 비교 분석하였다.

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Octa (2-ethyls expel oxy) copper-phthalocyanine LB막의 NO$_2$가스 탐지 특성에 관한 연구 (A study on the NO$_2$Gas Detection chracteristics of the Octa (2-ethylhexyloxy) copper-phthalocyanine LB film)

  • 임준석;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.121-124
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    • 1996
  • It is well known that the metallo- phthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$and also chemically and thermally stable. Therefore, lots of MPcs have been studied for the potential chemical sensor for NO$_2$gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyanine were prepared by Langmuir -Blodgett method and characterized by using UV-VIS spectroscopy and ellipsometry. Transfer condition, and characterization of LB films were investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$gas as a function of film thickness, temperature and temperature were discussed.

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