Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical and Chemical characteristics of Zn(II)-Porphyrin Langmuir-Blodgett(LB) Films

Zn(II)-Porphyrin LB막의 전기, 화학적 특성에 관한 연구

  • 구자룡 (홍익대학교 전기정보제어공학과) ;
  • 이호식 (홍익대학교 유기 소재 및 소자 연구센터) ;
  • 김영관 (홍익대학교 화학공학과) ;
  • 김정수 (홍익대학교 전기정보제어공학과)
  • Published : 2002.07.08
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Abstract

Since Metallo-Porphyrin (MP) is very interesting compound due to its unique electronic and redox properties and it is also chemically and thermally stable, MP has been studied for potential memory and switching devices. In this study, thin films of 5,10,15,20 - Tetrakis - Octadecyloxymethylphenyl - Porphyrin - Zn(II) (Zn-TPP) were prepared by the Langmuir-Blodgett (LB) method and characterized by using UV/vis absorption spectroscopy and cyclic voltammetry. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was $135{\AA}^2$/molecule. The current-voltage (I-V) characteristics of these films were investigated.

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