Fabrication and New Model of Saturated I-V Characteristics of Hydrogenerated Amorphous Silicon Thin Film Transistor

비정질 실리콘 박막 트랜지터 포화전압 대 전류특성의 새로운 모델

A new analytical expression for the saturated I-V characteristics of hydrogenerated amorphous silicon thin film transistors(a-si:H TFT) is presented and experimentally verified. The results show that the experimental transfer and output characteristics at several temperatures are easily modeled. The model is based on three functions obtained from the experimental data of $I_D$ versus $V_G$. Theoretical results confirm the simple form of the model in terms of the device geometry. It was determined that the saturated drain current increased at a fixed gate voltage and the device saturated at increasingly larger drain voltages while the threshold voltages decreased.