• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.172-178
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• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.

• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2324-2332
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• 2017

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current ($I_{on}$), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length ($L_G$) was scaled down. The proposed TFET with a $L_G$ of 5 nm operated with an $I_{on}$ of $1.3mA/{\mu}m$, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage ($V_{DS}$) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional $L_G$ of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

• Geomechanics and Engineering
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• 제15권2호
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• pp.739-744
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• 2018

This paper presents the results of numerical modeling studies on the effect of displacements of tunneling in granular soils. Presence of building loads is considered, to find displacement generated at the surface on tunnel. Effect of varying eccentricities of building is simulated, to find influence of building on vertical and horizontal displacement. Studies were carried out in two cases of with and without a geosynthetic layer installed at the bottom of the footing. Results of analysis revealed, the presence of geosynthetic layer under footing, with building placed on centre line, reduced the surface displacements compared to displacement generated without geosynthetic layer. Presence of geosynthetic layer under footing had a dominant effect in reducing displacements in high storey structures. However, when the building was shifted to greater eccentricities from centre line, presence of geosynthetic layer, led to insignificant reduction of displacements on the centre line at the surface.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.271-276
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• 2017

The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.

• 센서학회지
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• 제29권4호
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• pp.275-278
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• 2020

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (V_DS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (V_GS) = threshold voltage (V_T), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

• 구강생물연구
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• 제42권4호
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• pp.254-261
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• 2018

Reports have it that horizontal and vertical loss of the ridge happens during 6 months after tooth extraction. So valuable ridge preservation techniques are often necessary in the maxillary anterior areas. Maintaining and/or increasing blood supply and stability is essential to graft survival. The objective of this study was to determine the effect on extraction socket seal of pedicle subepithelial connective tissue graft with tunneling on maxillary esthetic zone through healing state for 8 weeks.

• 한국정보과학회논문지:정보통신
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• 제36권1호
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• pp.43-49
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• 2009

표준 Mobile IPv6(MIPv6)는 이종 접속 망간 호스트 이동성을 지원할 때, 핸드오프(handoff) 시 발생하는 링크 단절과 터널 변경시점의 차이로 인해 패킷 손실을 유발한다. 다시 말해, 새로운 터널 생성과 라우팅 갱신 과정에서 추가적인 패킷 손실이 발생하게 된다. 본 논문은 이 때 발생하는 상 하향 패킷 손실을 최소화하는 Mobile IPv6기반 이원적 터널 기법을 제안한다. 그래서, UMTS 광대역 망과 WLAN 협대역 망을 이종 접속 망 모델로 설정하고, 사이에서 Mobile IPv6기반 핸드오프 시 발생하는 패킷 손실을 정량적 분석과 컴퓨터 모의실험 측정을 통해 제안 기법의 성능 향상을 입증한다.

• 한국터널지하공간학회 논문집
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• 제13권1호
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• pp.51-69
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• 2011

본 논문은 터널 굴착에 따른 상부교량 말뚝기초의 거동 변화를 3차원 수치해석을 통하여 분석하였다. 또한 터널의 심도변화에 따른 상부 말뚝기초 거동의 변화를 분석하기 위하여 직경이 10 m인 터널의 심도에 대한 매개변수 분석을 수행하였다. 해석결과를 이용하여 지반 변위, 말뚝기초의 연직변위, 터널 굴착 직각방향 및 굴착방향 변위, 기초의 축력변화 등을 분석하였으며, 이 분석 결과를 토대로 터널의 굴착면의 위치에 따른 교량 기초의 지지거동 변화를 알아보았다.

• 대한치과보철학회지
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• 제36권5호
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• pp.738-747
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• 1998

The purpose of this study was to compare the positional stability of removable dies using several dowel pin systems. The removable dies were made by using five dowel pin systems: single dowel pin(Group I), single dowel pin and prepared groove on the die base(Group II), two-single dowel pin(Group III), two separate parallel dowel pins with plastic sleeves(Group IV), double straight dowel pins with metal sleeve(Group V). Special aluminum mold was made for specimens, and the dies of specimens removed and replaced thirty times with universal testing machine. Horizontal and vertical shift of dies was measured by Olympus monocular scanning tunneling microscope(STM5). The results were as follows: 1. The vertical shift was larger than the horizontal shift in all the other groups except Group I. 2. Single dowel pin system(Group I) was the most unstable of five dowel pin systems. 3. Double dowel pin systems with steeve(group IV, V) were the most stable of five dowel pin systems. 4. This study indicates that excellent horizontal positional stability is attainable with use of additional groove on the die base or double dowel pin. and excellent vertical positional stability is attainable with use of sleeve.