• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.27-30
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• 1988

This paper is investigated on the sublimation in obliguely deposited a-$Se_{75}Ge_{25}$ films. With varying the treatment conditions, the transmittance in each of $0^{\circ}$, $60^{\circ}$, and $80^{\circ}$-deposited films and the absorbance in $80^{\circ}$-deposited film were measured. By increasing the angle of deposition, the variation of transmittance in post-exposure annealing film showed the characteristic different from that in only exposed film or annealed film. And the changes of thickness in $80^{\circ}$-deposited film were measured. The results showed that the changing rate of thickness was 1.4% in exposed film and 9.4% in post-exposure annealing film. Therefore, in $80^{\circ}$-deposited film, the possibility for sublimatin due to physical and chemical change by post-exposure annealing can be suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.32 no.4
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• pp.41-48
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• 2000

The main objective of this study was to investigate the packing state and optical properties of coated paper prepared with different coating colors by varying the blending ratio of such pigment as clay, $CaCO_3$, and plastic pigment. To evaluate the effect of packing state of pigment on the properties of coated paper, the coating thickness, which was theoretically calculated by specific gravity, and packing volume of pigment were used. It was found that there exists close relationship between the coating thickness and surface property of coated paper. For instance, the macro roughness(smoothness) of coated paper is closely related to bulkiness. Plastic pigments used in this research has a high finishing efficiency on the light weight coatings. Especially, hollow sphere pigment was very effective for improving the property of coated paper produced in this test. And when HSP was blended with $CaCO_3$the surface property such as smoothness and gloss improved significantly.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.231-234
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• 2006

To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.319-324
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• 2003

AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

• Plant Journal
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• v.7 no.1
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• pp.49-55
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• 2011

This study analyzed causes and status of cracks to suggest preventives for welding cracks generated on fillet welding zone of atmosphere corrosion resisting steel box girder. Penetrant testing, a sort of non-destructive testing, was conducted for inspection of crack status on welding zone. As a result of test, welding cracks were found on the point of start, center and end to fillet welding zone of 32 mm-thickness. The result of carbon equivalent composition of materials was 0.452%. According to welding specification, to preheat prevent welding crack, preheat temperature of $100{\sim}200^{\circ}C$ should be kept before welding execution. It was failed to keep preheat temperature because it had been executed on winter season and the structure of box girder had wide heat transfer area. As a result of examination of time varying preheating temperature of 32mm-thickness material, it was understood that preheat temperature of above $230^{\circ}C$ on both 130mm-long sides of welded joint can prevent welding crack.

• Journal of the Society of Naval Architects of Korea
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• v.52 no.3
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• pp.180-186
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• 2015

This study proposed a new method of preparing granular ethylene glycol/aliphatic detergent (EG/AD) model ice that has both strength and uniform thickness. Various sheets of granular model ice prepared in ice tanks are surveyed and their preparation procedures are analyzed. We not only made a new granular model ice using the EG/AD solution but also measured its thickness, strength, and density. In addition, we found that the strength of the model ice could be controlled by varying the time and air temperature in the consolidation phase. Based on the results of this study, we verified that granular EG/AD model ice can be prepared more uniformly and effectively than columnar EG/AD model ice. This study is intended to contribute to reducing the time required for the ice model test and the operation of the ice model basin.

• Environmental Engineering Research
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• v.25 no.3
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• pp.418-425
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• 2020

In this study soft computing techniques including, Artificial Neural Network (ANN) and Adaptive Neuro-Fuzzy Inference System (ANFIS) were investigated for the prediction of Cr(VI) transport efficiency by novel Polymer Inclusion Membranes (PIMs). Transport experiments carried out by varying parameters such as time, film thickness, carrier type, carier rate, plasticizer type, and plasticizer rate. The predictive performance of ANN and ANFIS model was evaluated by using statistical performance criteria such as Root Mean Standard Error (RMSE), Mean Absolute Error (MAE), and Coefficient of Determination (R²). Moreover, Sensitivity Analysis (SA) was carried out to investigate the effect of each input on PIMs Cr(VI) removal efficiency. The proposed ANN model presented reliable and valid results, followed by ANFIS model results. RMSE and MAE values were 0.00556, 0.00163 for ANN and 0.00924, 0.00493 for ANFIS model in the prediction of Cr(VI) removal efficiency on testing data sets. The R² values were 0.973 and 0.867 on testing data sets by ANN and ANFIS, respectively. Results show that the ANN-based prediction model performed better than ANFIS. SA demonstrated that time; film thickness; carrier type and plasticizer type are major operating parameters having 33.61%, 26.85%, 21.07% and 8.917% contribution, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.728-731
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• 2009

We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.9-9
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• 2008

Recently, the thickness of solar cell gets thinner to reduce the quantity of silicon. And the reduced thickness make it easy to be broken while PV module fabrication process. This phenomenon might make PV module's maximum power and durability down. So, when using thin solar cell for PV module fabrication, it is needed to optimize the material and fabrication condition which is quite different from normal thick solar cell process. Normally, gel-content of EVA sheet should be higher than 80% so PV module has long term durability. But high gel-content characteristic might cause micro-crack on solar cell. In this experiment, we fabricated several specimen by varying curing temperature and time condition. And from the gel-content measurement, we figure the best fabrication condition. Also we examine the crack generation phenomenon during experiment.