• Title/Summary/Keyword: variation of channel

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Limitations of the Transition State Variation Model. Part 8. Dual Reaction Channels for Solvolyses of 3,4-Dimethoxybenzenesulfonyl Chloride

  • Koo, In-Sun;Kwon, Eun-Ju;Choi, Ho-June;Yang, Ki-Yull;Park, Jong-Keun;Lee, Jong-Pal;Lee, Ikc-Hoon;Bentley, T. William
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2377-2381
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    • 2007
  • Solvolyses of 3,4-dimethoxybenzenesulfonyl chloride (DSC) in water, D2O, CH3OD, and in aqueous binary mixtures of acetone, acetonitrile, 1,4-dioxane, ethanol, methanol, and 2,2,2-trifluoroethanol (TFE) have been investigated at 25.0 oC. Kinetic solvent isotope effects (KSIE) in water and in methanol and product selectivities in alcohol-water mixtures are also reported. The Grunwald-Winstein plot of first-order rate constants for the solvolyic reaction of DSC with YCl shows marked dispersions into separated lines for various aqueous mixtures. With use of the extended Grunwald-Winstein equation, the l and m values obtained are 1.12 and 0.58 respectively for the solvolyses of DSC. The relatively large magnitude of l is consistent with substantial nucleophilic solvent assistance. From Grunwald-Winstein plots the rate data are dissected approximately into contributions from two competing reaction channels. This interpretation is supported for alcohol-water mixtures by the trends of product selectivities, which show a maximum for ethanol-water mixtures. From the KSIE of 1.45 in methanol, it is proposed that the reaction channel favored in methanolwater mixtures and in all less polar media is general-base catalysed and/or is possibly (but less likely) an addition-elimination pathway. Also, the KISE value of 1.35 for DSC in water is expected for SN2-SN1 processes, with minimal general base catalysis, and this mechanism is proposed for solvolyses in the most polar media.

Effect of Sputtering Power on the Change of Total Interfacial Trap States of SiZnSnO Thin Film Transistor

  • Ko, Kyung-Min;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.328-332
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    • 2014
  • Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

Preliminary Analysis of Data Quality and Cloud Statistics from Ka-Band Cloud Radar (Ka-밴드 구름레이더 자료품질 및 구름통계 기초연구)

  • Ye, Bo-Young;Lee, GyuWon;Kwon, Soohyun;Lee, Ho-Woo;Ha, Jong-Chul;Kim, Yeon-Hee
    • Atmosphere
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    • v.25 no.1
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    • pp.19-30
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    • 2015
  • The Ka-band cloud radar (KCR) has been operated by the National Institute of Meteorological Research (NIMR) of Korea Meteorological Administration (KMA) at Boseong National Center for Intensive Observation of severe weather since 2013. Evaluation of data quality is an essential process to further analyze cloud information. In this study, we estimate the measurement error and the sampling uncertainty to evaluate data quality. By using vertically pointing data, the statistical uncertainty is obtained by calculating the standard deviation of each radar parameter. The statistical uncertainties decrease as functions of sampling number. The statistical uncertainties of horizontal and vertical reflectivities are identical (0.28 dB). On the other hand, the statistical uncertainties of Doppler velocity (spectrum width) are 2.2 times (1.6 times) larger at the vertical channel. The reflectivity calibration of KCR is also performed using X-band vertically pointing radar (VertiX) and 2-dimensional video disdrometer (2DVD). Since the monitoring of calibration values is useful to evaluate radar condition, the variation of calibration is monitored for five rain events. The average of calibration bias is 10.77 dBZ and standard deviation is 3.69 dB. Finally, the statistical characteristics of cloud properties have been investigated during two months in autumn using calibrated reflectivity. The percentage of clouds is about 26% and 16% on September to October. However, further analyses are required to derive general characteristics of autumn cloud in Korea.

A Study on the ASF Correction Age and Error for Effective eLORAN Data Channel Utilization in Korea

  • Choi, Yun Sub;Hwang, Sang-Wook;Yeo, Sang-Rae;Park, Chansik;Yang, Sung-Hoon;Lee, Sang Jeong
    • Journal of Positioning, Navigation, and Timing
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    • v.2 no.2
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    • pp.109-114
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    • 2013
  • The vulnerability of GPS to interference signals was reported in the early 2000s, and an eLORAN system has been suggested as a backup navigation system for replacing the existing GPS. Thus, relevant studies have been carried out in the United States, Europe, Korea, etc., and especially, in Korea, the research and development is being conducted for the FOC of the eLORAN system by 2018. The required performance of the eLORAN system is to meet the HEA performance, and to achieve this, it is essential to perform ASF correction based on a dLORAN system. ASF can be divided into temporal ASF, nominal ASF, and spatial ASF. Spatial ASF is the variation due to spatial characteristics, and is stored in an eLORAN receiver in the form of a premeasured map. Temporal ASF is the variations due to temporal characteristics, and are transmitted from a dLORAN site to a receiver via LDC. Unlike nominal ASF that is obtained by long-term measurement (over 1 year), temporal ASF changes in a short period of time, and ideally, real-time correction needs to be performed. However, it is difficult to perform real-time correction due to the limit of the transmission rate of the LDC for transmitting correction values. In this paper, to determine temporal ASF correction frequency that shows satisfactory performance within the range of the limit of data transmission rates, relative variations of temporal ASF in summer and winter were measured, and the stability of correction values was analyzed using the average of temporal ASF for a certain period.

Effect of the Log normal/Nakagami Faded Interferers on Imperfect power-controlled DS/CDMA cellular system (대수정규-나카가미(Nakagami)페이딩을 받은 간섭파가 불완전 전력제어된 DS/CDMA 셀룰러 시스템에 미치는 영향)

  • 현근주;김남수
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.24 no.8A
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    • pp.1107-1114
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    • 1999
  • In this paper, we analyze the effect of co-channel interferers coming from other systems with composite log-normal shadowing and Nakagami fading on the capacity of the imperfect power-controlled DS/CDMA cellular system. The analytical results are compared with the results of Prasad and Jansen in which they derive the result under the condition of imperfect power-control of DS/CDMA system and without considering interference. And the outage probability is calculated fro the effect of the log-normal/Nakagami faded inferers on DS/CDMA system using Schwartz and Yeh's method. With the deviation of outage probability, we analyzed the decreases in the capacity of DS/CDMA system with the variation of the paramenters of the imperfect power-control, the fadig index, the processing gain, the power ratio, the voice activity factor, and the number of interferers. Analysis reuslts have shown that the capacity of DS/CDMA system is very sensitive to the imperfect power-control and the number of interferers. It is shown that the DS/CDMA system capacity decreased according to increase of the deviation of the impertect power-control, the increase of the fading, and the increase of interferer number.

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Electrical characteristics of GaAs MESFET according to the heat treatment of Ti/Au and Ti/Pd/Au schottky contacts (Ti/Au, Ti/Pd/Au 쇼트키 접촉의 열처리에 따른 GaAs MESFET의 전기적 특성)

  • 남춘우
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.56-63
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    • 1995
  • MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

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Analysis of CRC-p Code Performance and Determination of Optimal CRC Code for VHF Band Maritime Ad-hoc Wireless Communication (CRC-p 코드 성능분석 및 VHF 대역 해양 ad-hoc 무선 통신용 최적 CRC 코드의 결정)

  • Cha, You-Gang;Cheong, Cha-Keon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37 no.6A
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    • pp.438-449
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    • 2012
  • This paper presents new CRC-p codes for VHF band maritime wireless communication system based on performance analysis of various CRC codes. For this purpose, we firstly describe the method of determination of undetected error probability and minimum Hamming distance according to variation of CRC codeword length. By using the fact that the dual code of cyclic Hamming code and primitive BCH code become maximum length codes, we present an algorithm for computation of undetected error probability and minimum Hamming distance where the concept of simple hardware that is consisted of linear feedback shift register is utilized to compute the weight distribution of CRC codes. We also present construction of transmit data frame of VHF band maritime wireless communication system and specification of major communication parameters. Finally, new optimal CRC-p codes are presented based on the simulation results of undetected error probability and minimum Hamming distance using the various generator polynomials of CRC codes, and their performances are evaluated with simulation results of bit error rate based on the Rician maritime channel model and ${\pi}$/4-DQPSK modulator.

An Analysis on Performance Degradation of Silicon Photomultipliers over Temperatures Variation for PET-MR Application (PET-MR 시스템에 적용을 위한 실리콘 광증배센서의 온도 변화에 따른 성능 열화 분석)

  • Park, Kyeongjin;Kim, Hyoungtaek;Lim, Kyungtaek;Cho, Minsik;Kim, Giyoon;Cho, Gyuseong
    • Journal of Radiation Industry
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    • v.9 no.3
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    • pp.143-151
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    • 2015
  • A PET-MR system is particularly useful in diagnosing brain diseases. We have developed a prototype positron emission tomography (PET) system which can be inserted into the bore of a whole-body magnetic resonance imaging (MRI) system that enables us to obtain PET and MRI images simultaneously with a reduced cost. Silicon photomultipliers (SiPM) are appropriated as a PET detector at PET/MR system because detectors have a high gain and are insensitive to magnetic fields. Despite of its improved performance compared to that of PMT-based detectors, there is a problem of the photo-peak channel shift which is due to the increase of the temperature inside the ring detector. This problem will occur decreasing sensitivity of the PET and image distortion. In this paper, I quantitative analyze parameters of the KAIST SiPM depending on temperature by experiments. And I designed cooling methods in consideration of the degradation of sensors for correction of the temperature in the PET gantry. According to this research, we expect that distortive images and degradation of the sensitivity will not be occurred with using the above idea to reduce heat even if the PET system operates for a long time.

Current-Voltage Characteristics of Schottky Barrier SOI nMOS and pMOS at Elevated Temperature (고온에서 Schottky Barier SOI nMOS 및 pMOS의 전류-전압 특성)

  • Ka, Dae-Hyun;Cho, Won-Ju;Yu, Chong-Gun;Park, Jong-Tae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.4
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    • pp.21-27
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    • 2009
  • In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measurement results of the temperature dependence of drain current with gate voltages. It is observed that the drain current increases with the increase of operating temperature at low gate voltage due to the increase of thermal emission and tunneling current. But the drain current is decreased at high gate voltage due to the decrease of the drift current. It is observed that the ON/Off current ratio is decreased due to the increased tunneling current from the drain to channel region although the ON current is increased at elevated temperature. The threshold voltage variation with temperature is smaller and the subthreshold swing is larger in SB-SOI nMOS and pMOS than in SOI devices or in bulk MOSFETs.

An Analytical Model with Three Sub-Regions for $M_2$ Tide in the Yellow Sea and the East China Sea

  • Jung, Kyung-Tae;Park, Chang-Wook;Oh, Im-Sang;So, Jae-Kwi
    • Ocean Science Journal
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    • v.40 no.4
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    • pp.191-200
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    • 2005
  • In this study an analytical tide model of uniform width with three sub-regions is presented. The three-subregions model takes into account step-like variations in depths in the direction of the channel as a way to examine the $M_2$ tide of the East China Sea (ECS) as well as the Yellow Sea (YS). A modified Proudman radiation condition has been applied at the northern open head, while the sea surface elevation is specified at the southern open boundary. It is seen that, due to the presence of an abrupt change in depth, co-amplitude lines of the $M_2$ tide are splitted to the east and west near the end of the ECS shelf region. Variations in depths, bottom friction and the open head boundary conditions all contribute to the determination of formation of amphidromes as well as overall patterns of $M_2$ tidal distribution. It is seen that increasing water depth and bottom friction in the ECS shelf results in the westward shift of the southern amphidrome. There is however no hint at all of the well-known degenerated tidal pattern being formed. It is inferred that a lateral variation of water depth has to be somehow incorporated to represent the tidal patterns in ECS in a realistic manner. Regarding the radiation factor introduced by Fang et al. (1991), use of a value larger than one, possibly with a phase shift, appears to be a proper way of incorporating the reflected waves from the northern Yellow Sea (NYS).