• Applied Science and Convergence Technology
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• 제25권4호
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• pp.73-76
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• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.217-225
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• 1997

In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].

• 한국표면공학회지
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• 제41권2호
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1357-1359
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• 2009

Many researchers studied cell culturing on surfaces with chemical functional groups. Previously, we reported surface properties of plasma polymerized ethylenediamine (PPEDA) films deposited by plasma enhanced chemical vapor deposition with various plasma conditions. Surface properties of PPEDA films can be controlled by plasma power during deposition. In this work, to analyze correlation of cell adherence/proliferation with surface property, we cultured rat intestinal epithelial cells-18 on the PPEDA films deposited with various plasma powers. It was shown that as plasma power was decreased, density of cells cultured on the PPEDA film surface was increased. Our findings indicate that plasma power changed the amine density of the PPEDA film surface, resulting in density change of cells cultured on the PPEDA film surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.195-195
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• 2010

$Ga_2O_3$ thin films have been grown on Si(001) substrates by metalorganic chemical vapor deposition (MOCVD) using dimethylgallium isopropoxide ($Me_2GaO^iPr$, DMGIP) with oxygen as the reactant gas. Suitability of the precursor for CVD was confirmed by thermogravimetric analysis (TGA) and vapor pressure measurement. Deposition was carried out in the substrate temperature range $450-650^{\circ}C$. Spectroscopic ellipsometry, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) and Rutherford back-scattering spectroscopy (RBS) were used to determine the thickness, crystallinity, and composition and stoichiometry of the films, respectively. From the slope of the Arrhenius plot in the temperature range $500-550^{\circ}C$, the activation energy of deposition was found to be $225.5\;kJ\;mol^{-1}$. As-deposited films were amorphous, but the monoclinic $\beta-Ga_2O_3$ phase was revealed after annealing the films in air at $1050^{\circ}C$. The XPS and RBS analyses indicate that the $Ga_2O_3$ films obtained by using DMGIP were found to be almost stoichiometric.

• Journal of Electrical Engineering and Technology
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• 제6권5호
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• pp.688-692
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• 2011

Carbon nanotubes (CNTs) are vertically grown inside high-aspect-ratio vertical pores of anodized aluminum oxide. A CNT catalyst layer is introduced by atomic layer deposition to the bottom of the pores, after which the CNTs are successfully grown from the layer using chemical vapor deposition. The CNTs formed a complete vertical conductive path. The conductivity of the CNT-vertical path is also measured and discussed. The present atomic layer deposition-incorporated catalyst deposition is predicted to enable the integration of CNTs with various challenging configurations, including high-aspect-ratio vertical channels or vertical interconnects.

• 한국초전도ㆍ저온공학회논문지
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• 제4권2호
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• pp.21-26
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• 2002

Textured CeO2 buffer layers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition (MOCVD). The degree of texture of deposited $CeO_2$ films was strong1y dependent on the deposition temperature (Td) and oxygen Partial Pressure(PO2). ($\ell$00) textured $CeO_2$ films were well deposited at T=500~52$0^{\circ}C$. PO2=0.90~3.33 Torr. The surface morphology showed that the films consisted of columnar CeO2 films grown from the Ni substrates. The root mean square roughness of CeO$_2$ films estimated by atomic force microscopy(AFM) increased as the deposition temperature(Td) increa- sed. The growth rate of the $CeO_2$ films deposited at T=52$0^{\circ}C$ and PO2=2.30 Torr was 150~200 nm/min that was much faster than that of other Physical deposition methods.

• 한국산학기술학회논문지
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• 제4권3호
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• pp.260-262
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• 2003

A thermal vapor deposition method for crystallization of insoluble analytes with matrix is established as a new sample preparation method for matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS). A mixture of mono, bis and tris(p-ethyl benzylidene) sorbitols was incorporated into microcrystals of ferulic acid, which was confirmed by confocal micrographs. Molecular masses of sorbitol derivatives were determined in this way by MALDI-MS without thermal decomposition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.139-142
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• 1995

Polyimide(PI) thin films are fabricated by vapor deposition polymerization(VDP) from PMDA and DDE. The IR spectrum show that PAA the films are changed into PI films by curing. The activation energy of PI films is estimated to be 0.32 [eV] at the electric field of 0.133 [Mv/cm]. The resistivity is about 4.5${\times}$10$\_$16/ [$\Omega$$.$cm] at room temperature.