Deposition of $CeO_2$ buffer layer for YBCO coated conductors on biaxially textured Ni substrate by MOCVD technique

양축 정렬된 Ni기판 위에 MOCVD법에 의한 YBCO 초전도 선재용 $CeO_2$ 완충층의 증착

  • 김호진 (성균관대 대학원 신소재공학과) ;
  • 주진호 (성균관대 금속재료공학부) ;
  • 전병혁 (한국원자력연구소 원자력재료기술개발부) ;
  • 정충환 (한국원자력연구소 원자력재료기술개발부) ;
  • 박순동 (한국원자력연구소 원자력재료기술개발부) ;
  • 박해웅 (한국기술교육대학교 신소재공학과) ;
  • 홍계원 (한국산업기술대학교 전자공학부) ;
  • 김찬중 (한국원자력연구소 원자력재료기술개발부)
  • Published : 2002.11.01

Abstract

Textured CeO2 buffer layers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition (MOCVD). The degree of texture of deposited $CeO_2$ films was strong1y dependent on the deposition temperature (Td) and oxygen Partial Pressure(PO2). ($\ell$00) textured $CeO_2$ films were well deposited at T=500~52$0^{\circ}C$. PO2=0.90~3.33 Torr. The surface morphology showed that the films consisted of columnar CeO2 films grown from the Ni substrates. The root mean square roughness of CeO$_2$ films estimated by atomic force microscopy(AFM) increased as the deposition temperature(Td) increa- sed. The growth rate of the $CeO_2$ films deposited at T=52$0^{\circ}C$ and PO2=2.30 Torr was 150~200 nm/min that was much faster than that of other Physical deposition methods.

Keywords

References

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