• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.80-84
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• 2008

We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1065-1068
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• 2003

For the first time, high quality ultra-thin strained Si/SiGe on Insulator (SGOI) substrate with total SGOI thickness( $T_{Si}$ + $T_{SiGe}$) of 13 nm is developed to combine the device benefits of strained silicon and SOI. In the case of 6- 10 nm-thick top silicon, 100-110 % $I_{d,sat}$ and electron mobility increase are shown in long channel nFET devices. However, 20-30% reduction of $I_{d,sat}$ and electron mobility are observed with 3 nm top silicon for the same long channel device. These results clearly show that the FETs operates with higher performance due to the strain enhancement from the insertion of SiGe layer between the top silicon layer and the buried oxide(BOX) layer. The performance degradation of the extremely thin( 3 nm ) top Si device can be attributed to the scattering of the majority carriers at the interfaces.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.13-18
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• 2000

We have fabricated LB ultra-thin films of maleate system by LB technique and evaluated the deposited status of LB ultra-thin films by I-V characteristics such as capacitance. It was found that the thickness of LB ultra-thin per layer is $27~30[{\AA}]$ by XRD. And, we have known that the conductivity along the horizontal direction of LB ultra-thin films was about $10^{-8}[S/cm]$, it corresponds to the semiconducting materials. Also, the I-V characteristics along the vertical direction of LB ultra-thin films was dominated by Schottky type current, the activation energy obtained by current-temperature characteristics was about 0.84[eV] and the conductivity was about $10^{-14}[S/cm]$, it corresponds to the insulator. And, the anisotropic conduction mechanism of the LB ultra-thin films in vertical direction and horizontal direction is determined by the hydrophilic group and the hydrophobic group in LB ultra-thin films. The above results are applicable to the semiconductor devices such as switching device, which function at the molecular level.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.19.2-19.2
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• 2011

The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

• 소성∙가공
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• 제29권6호
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• pp.323-330
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• 2020

The surface region of a sheet metal may have different characteristics from the inner region because the surface region is less restricted than the interior. In addition, the grains on the free surface are less hardened because of surface adsorption of the dislocations, rather than piling up. In the case of bulk or thick sheet metals, this effect is negligible because the fraction of the surface region is much smaller than that of the inner region. However, this surface effect is important in the case of ultra-thin sheet metals. In order to evaluate the surface effect, tensile and bending tests were performed for the SS304 stainless steel with a thickness of 0.39 mm. The bending force predicted using the tensile behavior is higher than the measurement because of the surface effect. To account for the surface effect, the surface layer model was developed by dividing the sheet section into surface and inner layers. The mechanical behaviors of the two regions were calibrated using the tensile and bending properties. The surface layer model reproduced the bending behavior of the ultra-thin sheet metal.

• Applied Science and Convergence Technology
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• 제25권2호
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• pp.32-35
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• 2016

Using conventional deposition techniques, we demonstrate a method to fabricate ultra-smooth 10 nm silver films without using a wetting layer or co-depositing another material. The argon working pressure plays a crucial role in achieving an excellent surface flatness for silver films deposited by DC magnetron sputtering on an InP substrate. The formation of ultra-smooth silver thin films is very sensitive to the argon pressure. At the optimum deposition condition, a uniform silver film with an rms surface roughness of 0.81 nm has been achieved.

• 한국항해학회지
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• 제19권4호
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• pp.83-92
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• 1995

In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ${\pm}0.006^{\circ}C$ at $800^{\circ}C$, temperature uniformity for graphite boat around was within ${\pm}0.15^{\circ}C$ at $650^{\circ}C$, and cooling rate was controllable from $2.2^{\circ}C$/min to $0.05^{\circ}C$/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.503-504
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2)superconducting thin films have been fabricated by atomic layer-by-layer deposition at an ultra low growth rate using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• 마이크로전자및패키징학회지
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• 제29권3호
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• pp.49-53
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• 2022

초박형 유리(Ultra-Thin Glass, UTG)는 디스플레이 보호용 커버 윈도우로 폴더블(foldable) 디스플레이에 사용되고 있으며, 향후에는 롤러블(rollable) 디스플레이나 다양한 플렉시블(flexible) 전자기기에 확대 적용될 것으로 예상되고 있다. 폴더블 디스플레이의 경우, 사용자들에 의해 굽힘과 터치 펜에 의해 충격을 받게 되고, 이 외에도 낙하 등 다른 외부충격에 쉽게 노출되어 있다. 초박형 유리는 100 ㎛ 이하로 두께가 얇고 취성하여 여러 외부 충격에 의해 쉽게 균열이나 파단이 발생할 수 있고, 이러한 균열이나 파단은 폴더블 디스플레이에 심각한 신뢰성 문제를 야기한다. 따라서, 본 연구에서는 초박형 유리의 내충격 신뢰성을 평가하는 펜 낙하 실험을 유한 요소 모델로 구성하고, 초박형 유리의 내충격 신뢰성을 향상시키기 위한 기계적 모델링을 진행하였다. 초박형 유리층 상부 혹은 하부에 보강층을 삽입했을 때, 펜 낙하에 의해 초박형 유리층에 작용하는 응력 메커니즘을 분석하였고, 그에 따라 신뢰성 향상을 위한 최적의 구조를 제시하였다. 또한 초박형 유리의 강도에 따른 최대 펜 낙하 높이를 예측할 수 있도록 펜 낙하 높이에 따라 초박형 유리층에 작용하는 최대 주 응력 값을 분석하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.