JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Resistive Switching Characteristics of TiO2 Films with -Embedded Co Ultra Thin Layer

  • Do, Young-Ho (New functional materials and devices lab, Department of Physics, Hanyang University) ;
  • Kwak, June-Sik (New functional materials and devices lab, Department of Physics, Hanyang University) ;
  • Hong, Jin-Pyo (New functional materials and devices lab, Department of Physics, Hanyang University)
  • Published : 2008.03.30
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Abstract

We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.

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