• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.08a
• /
• pp.248-248
• /
• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.320-320
• /
• 2007

Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.3
• /
• pp.246-250
• /
• 2001

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.539-542
• /
• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• Proceedings of the Korean Magnestics Society Conference
• /
• 2004.12a
• /
• pp.85-86
• /
• 2004

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.15-15
• /
• 2018

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.10a
• /
• pp.54-57
• /
• 1988

A film is fabricated by depositing several slices ultra thin films on a slide glass. The UV-absorbance outcomed on a multi-layered bulky ultra thin film with (N-docosyl pyridinium)-TCNQ (1:2) complex results tat the quantity of UV-absorbances becomes more linearly according to the number of layer becomes higher. In addition, it is found that the capacitance of this film gets smaller as the number of layer gets higher. Finally, the conductivity of this film is measured by the direction of the long axis of the TCNQ radical anion, and is resulted in a remarkably low value (about 1.66∼3.78 x 10$\^$-14/S/cm).

• Journal of Industrial Technology
• /
• v.19
• /
• pp.101-105
• /
• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• Electrical & Electronic Materials
• /
• v.8 no.5
• /
• pp.601-605
• /
• 1995

This study was concerned, after the oxide films(50 [.angs.]) were grown in a furnace and the MOS capacitor fabricated, with experimental comparison and verification about the Interference Effect of Electronic Waves in the ultra thin oxide/silicon interface. The average error was about 0.8404[%] in n'gate/p-sub and about 0.2991[%] in p$^{+}$gate/p-sub. Therefore, it was predicted that the Interference Effect of Electronic Waves can overcome somewhat according to the gate polarity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.39-41
• /
• 1992

The characteristics of LB ultra-thin film multi-layers were evaluated by the AT-cut quartz crystal. Cholesterol and phosphatidyl choline LB multi-layers were deposited on the surface of quartz crystal by using vertical lifting method and horizontal lifting method. There was good relationship between deposition ratio and frequency shift, and the frequency was more stable at the case of horizontal lifting method to the vertical lifting method.