Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Correlation Between Deposition Parameters and Photoluminescence of ZnO Semiconducting Thin Films by Pulsed laser Deposition

PLD증착 변수에 따른 II-VI족 화합물 ZnO 반도체 박막의 발광 특성 연구

  • 배상혁 (연세대학교 전기전자공학과) ;
  • 윤일구 (연세대학교 전기전자공학과) ;
  • 서대식 (연세대학교 전기전자공학과) ;
  • 명재민 (연세대학교 재료공학부) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2001.03.01
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Abstract

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

Keywords

References

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