• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권7호
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• pp.358-363
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• 2004

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.698-701
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• 2001

Loss analyses of two soft switching techniques for two-transistor forward converters are presented. The sums of snubber conduction and capacitive turn-on losses for two transistors are calculated to compare the losses of two techniques. While the conventional soft switching technique shows the loss difference between two transistors, proposed soft switching technique shows equal as well as lower loss in two transistors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1009_1010
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• 2009

This paper presents a power supply system with pre-regulator using zero voltage switching (ZVS) interleaving two-transistor forward converter for high input voltage and high power application. A SMPS has a advantage that a good efficiency, small size and light weight but has a noise problem. A linear power supply system has a advantage that a good stability, low ripple and noise but has a disadvantage that a big size, low efficiency and heat problem. To alleviate these problems, we propose an power supply system using dual ZVS interleaving two-transistor forward pre-regulator. The proposed converter is verified on a 1kW, 50kHz experimental prototype.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.196-197
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• 2006

In this paper, two types of vertical SIT(Static Induction Transistor) structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. First, a trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. Second, a trench gate-source region power SIT device is proposed to obtain more higher forward blocking voltage and forward blocking characteristics at the same size. The two proposed devices have superior electrical characteristics when compared to conventional device. In the proposed trench gate oxide power SIT, the forward blocking voltage is considerably improved by using the vertical trench oxide and the forward blocking voltage is 1.5 times better than that of the conventional vertical power SIT. In the proposed trench gate-source oxide power SIT, it has considerable improvement in forward blocking characteristics which shows 1500V forward blocking voltage at -10V of the gate voltage. Consequently, the proposed trench oxide power SIT has the superior stability and electrical characteristics than the conventional power SIT.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제48권9호
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• pp.467-475
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• 1999

This paper presents an analysis method of a forward converter, using both the finite element method considering the external circuit and a state variables equation. The converter operates at 50kHz and its one period is divided into two modes for the simplicity of the analysis. In the first mode, the switching transistor turns on and an input power is transferred into the load by the electromagnetic conversion action of a ferrite transformer. In the second mode, the switching transistor turns off and the stored energy in an inductor is delivered to the load, and the transformer core is demagnetized by the reset winding current. In this paper, time-stepping finite element method taking into account the on-state electrical circuit of the converter in used to analyze both the electrical circuit and electromagnetic field of the magnetic device during the first mode and the demagnetization period of the transformer core. Then a state variables equation for the circuit which the inductor current flows is constituted and solved during the second mode. As a result, the simulation results have been good agreement with the results obtained form experiment.

• Journal of Power Electronics
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• 제10권3호
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• pp.245-250
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• 2010

Input-series-output-parallel (ISOP) converters consisting of multiple modular DC/DC converters can enable low voltage rating switches to be used under high voltage input applications. This paper presents a digital control strategy, which can achieve equal sharing of input voltage for a modular ISOP system consisting of two-transistor forward DC/DC converters by forcing the input voltages of neighboring modules to be equal. The proposed scheme is analyzed using small signals analysis based on the state space average method. The performance of the proposed control strategy is verified with an experimental prototype of an ISOP converter made up of three two-switch forward converters.

• 대한전기학회논문지
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• 제45권2호
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• pp.230-234
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• 1996

A new trenched Hybrid Schottky INjection Field Effect Transistor (HSINFET) is proposed and verified by 2-D semiconductor device simulation. The feature of the proposed structure is that the hybrid Schottky injector is implemented at the trench sidewall and p-n junction injector at the upper sidewall and bottom of a trench. Two-dimensional simulation has been performed to compare the new HSINFET with the SINFET, conventional HSINFET and lateral insulated gate bipolar transistor(LIGBT). The numerical results shows that the current handling capability of the proposed HSINFET is significantly increased without sacrificing turn-off characteristics. The proposed HSINFET exhibits higher latch-up current density and much faster switching speed than the lateral IGBT. The forward voltage drop of the proposed HSINFET is 0.4 V lower than that of the conventional HSINFET and the turn-off time of the trenched HSINFET is much smaller than that of LIGBT.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.1160-1162
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• 2003

This paper presents ZVZCS(Zero-Voltage and Zero-Current Switching) Dual TTFC(Two-Transistor Forward Converter) without primary freewheeling diodes. The principle of operation, feature and design considerations are illustrated and verified through the ecperiment with a 1.8kW 55kHz MOSFET based experimental circuit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.292-295
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• 2004

The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2006년도 전력전자학술대회 논문집
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• pp.356-359
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• 2006

This paper presented the power losses comparison results with the Active clamp Forward, the Asymmetrical half bridge and the Two transistor forward converters. To estimate for conduction losses in the converters, the steady state analysis regard to parasitic resistance and current effective values for main parts of converters was derived. In addition, the theoretical efficiency for the converters with input voltage 400V, output voltage 12V and maximum power 480W was discussed.