• Title/Summary/Keyword: tunneling method

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The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling

  • Wu, Meile;Jin, Xiaoshi;Kwon, Hyuck-In;Chuai, Rongyan;Liu, Xi;Lee, Jong-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.3
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    • pp.245-251
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    • 2013
  • The effect of band-to-band tunneling (BTBT) leads to an obvious increase of the leakage current of junctionless (JL) transistors in the OFF state. In this paper, we propose an effective method to decline the influence of BTBT with the example of n-type double gate (DG) JL metal-oxide-semiconductor field-effect transistors (MOSFETs). The leakage current is restrained by changing the geometrical shape and the physical dimension of the gate of the device. The optimal design of the JL MOSFET is indicated for reducing the effect of BTBT through simulation and analysis.

Effect of tunneling under a bridge on pile foundation behavior mechanism (교량 직하부에 시공되는 터널에 의한 말뚝기초의 거동변화)

  • Choi, Go-Ny;Woo, Seung-Je;Yoo, Chung-Sik
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.13 no.1
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    • pp.51-69
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    • 2011
  • This paper presents the effect of tunneling on bridge pile foundation being operated using three-dimensional numerical modeling. Also the parametric study on the depth of tunnel of which the diameter was 10 m was carried out in order to evaluate the behaviors of pile foundation due to the tunnel excavation. This paper expresses the changes of vertical and horizontal displacement, movement of soil and stress of the pile. Based on the results obtained from the numerical analysis some insights into the changes of pile foundation behaviors due to variations of tunneling location were mentioned and discussed.

Vacuum Packaging and Operating Properties of Micro-Tunneling Sensors

  • Park, H.W.;Lee, D.J.;Son, Y. B.;Park, J.H.;Oh, M. H.;Ju, B. K.
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.110-110
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    • 2000
  • Cantilever-shaped lateral field emitters were fabricated and their electrical characteristics were tested. As shown in Fig.1, poly-silicon cantilevers were fabricated by the surface micromachining and they were used to the vacuum magnetic field sensors. The tunneling devices were vacuum sealed with the tubeless packaging method, as shown in Fig.2 and Fig.3. The soda-lime glasses were used for better encapsulation, so the sputtered silicon and the glass layers on the soda-lime glasses were bonded together at 1x10$^{-6}$ Torr. The getter was activated after the vacuum sealing fur the stable emissions. The devices were tested outside of the vacuum chamber. Through vacuum packaging, the tunneling sensors can be utilized. Fig.4 shows that the sensor operates with the switching of the magnetic field. When the magnetic field was applied to the device, the anode currents were varied by the Lorentz force. The difference of anode currents can be varied with the strength of the applied magnetic field.

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Electrical characteristic of stacked $SiO_2/ZrO_2$ for nonvolatile memory application as gate dielectric (비휘발성 메모리 적용을 위한 $SiO_2/ZrO_2$ 다층 유전막의 전기적 특성)

  • Park, Goon-Ho;Kim, Kwan-Su;Oh, Jun-Seok;Jung, Jong-Wan;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.134-135
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    • 2008
  • Ultra-thin $SiO_2/ZrO_2$ dielectrics were deposited by atomic layer chemical vapor deposition (ALCVD) method for non-volatile memory application. Metal-oxide-semiconductor (MOS) capacitors were fabricated by stacking ultra-thin $SiO_2$ and $ZrO_2$ dielectrics. It is found that the tunneling current through the stacked dielectric at the high voltage is lager than that through the conventional silicon oxide barrier. On the other hand, the tunneling leakage current at low voltages is suppressed. Therefore, the use of ultra-thin $SiO_2/ZrO_2$ dielectrics as a tunneling barrier is promising for the future high integrated non-volatile memory.

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Smart Gateway VPN Tunneling Control System based on IoT (IoT 기반 스마트 게이트웨이 VPN 터널링 제어 시스템)

  • Yang, Seungeui;Kim, Changsu;Lee, Jongwon;Jung, Hoekyung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.05a
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    • pp.575-576
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    • 2017
  • Recently, research have smart gateways can provide additional services through the IoT and Big Data. However, the existing System is number of devices connected increases to the Server, the stability of the network is degraded and data security is poor. In this paper, we design a smart gateway VPN tunneling control system based on IoT to solve these problems. we propose an effective VPN tunneling technology for low-end targets such as routers, and a method for efficiently controlling traffic in real-time in an environment where the quality of the Internet line changes dramatically. It is possible to control the sensor in the home safely through the VPN at the remote place.

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An Efficient Multicast Routing Scheme for Mobile Hosts in IPv6 based Networks (IPv6 기반 망에서 이동 호스트들을 위한 효율적인 멀티캐스트 라우팅 기법)

  • Yang, Seung-Jei;Park, Sung-Han
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.38 no.8
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    • pp.11-18
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    • 2001
  • In this paper, we propose a multicast routing scheme for an efficient and reliable support of multicast service to mobile hosts in IPv6 based networks. The purpose of this paper is to develop an algorithm to reduce both the number or multicast tree reconstruction and the multicast service disrupt time. The proposed multicast routing scheme is a hybrid method using the advantages of the bi-directional tunneling and the remote subscription proposed by the IETF Mobile IP working group. The proposed scheme satisfies the maximum tolerable transfer delay time and supports the maximum tunneling service. The simulation results show that the proposed scheme has better performance in the number of multicast tree reconstruction and the time of multicast service disrupt than the previous schemes does.

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Spatial mapping of screened electrostatic potential and superconductivity by scanning tunneling microscopy/spectroscopy

  • Hasegawa, Yukio;Ono, Masanori;Nishio, Takahiro;Eguchi, Toyoaki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.12-12
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    • 2010
  • By using scanning tunneling microscopy/spectroscopy (STM/S), we can make images of various physical properties in nanometer-scale spatial resolutions. Here, I demonstrate imaging of two electron-correlated subjects; screening and superconductivity by STM/S. The electrostatic potential around a charge is described with the Coulomb potential. When the charge is located in a metal, the potential is modified because of the free electrons in the host. The potential modification, called screening, is one of the fundamental phenomena in the condensed matter physics. Using low-temperature STM we have developed a method to measure electrostatic potential in high spatial and energy resolutions, and observed the potential around external charges screened by two-dimensional surface electronic states. Characteristic potential decay and the Friedel oscillation were clearly observed around the charges [1]. Superconductivity of nano-size materials, whose dimensions are comparable with the coherence length, is quite different from their bulk. We investigated superconductivity of ultra-thin Pb islands by directly measuring the superconducting gaps using STM. The obtained tunneling spectra exhibit a variation of zero bias conductance (ZBC) with a magnetic field, and spatial mappings of ZBC revealed the vortex formation [2]. Size dependence of the vortex formation will be discussed at the presentation.

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Tunnel Effects in the H + D$_2$ and D + H$_2$ Reactions

  • Jong-Baik Ree;Young-Seek Lee;In-Joon Oh;Tai-kyue Ree
    • Bulletin of the Korean Chemical Society
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    • v.4 no.1
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    • pp.28-36
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    • 1983
  • We considered the tunneling effect on the rate constants calculated from transition-state theory for the H + $D_2$ and D + $H_2$ reactions. A method for evaluating the important parameter Ec (potential barrier height) was proposed. A tunnel-effect correlation factor (TECF) ${\Gamma}_{t}exp{\theta}_t$ was estimated from experimental data, and compared with the corresponding values obtained from many theoretical methods. According to our results, the tunneling effect cannot be negligible around $800^{\circ}$K where the TECF value is ca. 0.8 whereas the factor approaches to unity at T > $2400^{\circ}$K where the tunneling completely disappears. In addition to the above fact, we also found that the TECF for the D + $H_2$ reaction is greater than that of the H + $D_2$ reaction in agreement with Garrett and Truhlar's result. In contrast to our result, however, Shavitt found that the order is reversed, i.e., TECF for (D + $H_2$) is greater than that for (H + $D_2$). We discussed about the Shavitt's result.

An overview of several techniques employed to overcome squeezing in mechanized tunnels; A case study

  • Eftekhari, Abbas;Aalianvari, Ali
    • Geomechanics and Engineering
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    • v.18 no.2
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    • pp.215-224
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    • 2019
  • Excavation of long tunnels by shielded TBMs is a safe, fast, and efficient method of tunneling that mitigates many risks related to ground conditions. However, long-distance tunneling in great depth through adverse geological conditions brings about limitations in the application of TBMs. Among various harsh geological conditions, squeezing ground as a consequence of tunnel wall and face convergence could lead to cluttered blocking, shield jamming and in some cases failure in the support system. These issues or a combination of them could seriously hinder the performance of TBMs. The technique of excavation has a strong influence on the tunnel response when it is excavated under squeezing conditions. The Golab water conveyance tunnel was excavated by a double-shield TBM. This tunnel passes mainly through metamorphic weak rocks with up to 650 m overburden. These metamorphic rocks (Shales, Slates, Phyllites and Schists) together with some fault zones are incapable of sustaining high tangential stresses. Prediction of the convergence, estimation of the creeping effects and presenting strategies to overcome the squeezing ground are regarded as challenging tasks for the tunneling engineer. In this paper, the squeezing potential of the rock mass is investigated in specific regions by dint of numerical and analytical methods. Subsequently, several operational solutions which were conducted to counteract the challenges are explained in detail.

Study on the Electromagnetic Wave Propagation In the Parallel-Plate Waveguide with the Metamaterial ENZ Tunnel Embedded (Metamaterial ENZ 터널이 포함된 평행 평판 도파관 내 전자기파의 전파 특성에 관한 연구)

  • Kahng, Sung-Tek
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.2
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    • pp.135-140
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    • 2009
  • This paper discusses how to change the electromagnetic waves' property in the cut-off causing discontinuity existing in the guiding structure of the RF passive component by using the metamaterial and elaborates on its principle. Particularly, we find and explain, from the viewpoint of electromagnetics and circuit theories, the so-called tunneling condition that when the segment with an extremely narrow cross-section leading to blockage in the parallel-plate waveguide is given the ENZ(Epsilon Near Zero) for its filling material, the wave starts to propagate through the segment. The analysis method as a transmission-line theory taking the discontinuity and material change into consideration is shown valid through the comparison with other methods for analyzing parallel-plate waveguides, and provides the illustration of the S-parameters and impedance describing the characteristics of the tunneling.