JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling

  • Wu, Meile (School of Information Science and Engineering, Shenyang University of Technology) ;
  • Jin, Xiaoshi (School of Information Science and Engineering, Shenyang University of Technology) ;
  • Kwon, Hyuck-In (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Chuai, Rongyan (School of Information Science and Engineering, Shenyang University of Technology) ;
  • Liu, Xi (School of Information Science and Engineering, Shenyang University of Technology) ;
  • Lee, Jong-Ho (School of EECS Eng. and ISRC (Inter-University Semiconductor Research Center), Seoul National University)
  • Received : 2012.12.03
  • Accepted : 2013.01.28
  • Published : 2013.06.30
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Abstract

The effect of band-to-band tunneling (BTBT) leads to an obvious increase of the leakage current of junctionless (JL) transistors in the OFF state. In this paper, we propose an effective method to decline the influence of BTBT with the example of n-type double gate (DG) JL metal-oxide-semiconductor field-effect transistors (MOSFETs). The leakage current is restrained by changing the geometrical shape and the physical dimension of the gate of the device. The optimal design of the JL MOSFET is indicated for reducing the effect of BTBT through simulation and analysis.

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References

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