• Title/Summary/Keyword: tunneling method

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Simple Parametric Analysis of the Response of Buried Pipelines to Micro-Tunneling-Induced Ground Settlements

  • Son, Moorak
    • Journal of the Korean GEO-environmental Society
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    • v.15 no.11
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    • pp.29-42
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    • 2014
  • This paper investigates the effects of micro-tunneling on buried pipelines parametrically. A simplified numerical approach was developed and various parametric studies have been conducted to evaluate the effects of ground settlements on the response of buried pipelines. The controlled parameters included the pipe stiffness, ground loss magnitude, and pipe location with respect to a micro-tunnel. Maximum settlement and curvature along a pipeline have been investigated and compared among others for different conditions. In addition, the numerical results have been compared with a theoretical method by Attewell et al. (1986), which is based on a Winkler type linear-elastic solution. The comparison indicated that the response of buried pipes to micro-tunneling-induced ground settlements highly depends on the soil-pipe interaction including the separation and slippage of pipe from soil with the effects of the investigated parameters. Therefore, rather than using the theoretical method directly, it would be a better assessment of the response of buried pipelines to consider the soil-pipe interaction in more realistic conditions.

Direct Measurement of Spindle Motion Error Using a Regular Crystalline Lattice and a Scanning Tunneling Microscope

  • Chaikool, Patamaporn;Aketagawa, Masato;Okuyama, Eiki
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.4
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    • pp.11-15
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    • 2008
  • Metrology tools with the ability to measure spindle motion error on the order of a nanometer are required due to recent advances in nanotechnology. We propose a direct measurement method for the radial motion error of a precision spindle using a regular crystalline lattice and a scanning tunneling microscope (STM). A highly oriented pyrolytic graphite (HOPG) crystal combined with an STM is used as a two-dimensional reference scale. The measurement principle and the preliminary experimental results are discussed in this article. The preliminary experimental results demonstrated that the proposed method has the capability to incorporate a two-dimensional encoder to measure the spindle motion error.

Recent Development of MRAM Technology

  • Miyazaki, T.;Ando, Y.;Kubota, H.
    • Journal of Magnetics
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    • v.8 no.1
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    • pp.36-44
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    • 2003
  • Three topics which are related to technologies for developing of large capacity MRAM over Gbits are reviewed. First, it is stressed that inelastic-electron-tunnel-tunneling spectroscopy(IETS) is a powerfull method to investigate the interface state between magnetic electrodes and insulator. Second, magnetic tunnel junctions with small bias voltage dependence are introduced. Finally, fabrication method of carbon masks for very small magnetic tunnel junctions is demonstrated. These three topics were presented at 47^{th} MMM 2002 conference and each paper will appear in the proceedings.

System dynamics of scanning tunneling microscope unit

  • Yamada, Hikaru;Endo, Toshiro;Tsunetaka-Sumomogi;Fujita, Toshizo;Morita, Seizo
    • 제어로봇시스템학회:학술대회논문집
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    • 1988.10b
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    • pp.794-797
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    • 1988
  • G. Binnig and H. Rohrer introduced the Scanning Tunneling Microscope (STM) in 1982 and developed it into a powerful and not to be missed physical tool. Scanning tunneling Microscopy is a real space surface imaging method with the atomic or subatomic resolution in all three dimensions. The tip is scanned over the surface by two piezo translators mounted parallel (X-piezo and Y-piezo) to the surface and perpendicular to each other. The voltage applied to the third piezo (Z-piezo) translator mounted perpendicular to the surface to maintain the tunneling current through the gap at a constant level reflects then the topography of the surface. The feed back control loop for the constant gap current is designed using the automatic control technique. In the designing process of the feed back loop, the identification of the gap dynamics is very complex and has difficulty. In this research, using some suitable test signals, the system dynamics of the gap including the Z-piezo are investigated. Especially, in this paper, a system model is proposed for the gap and Z-piezo series system. Indicial response is used to find out the model. The driving voltage of the Z-piezo and the tunneling current are considered as input and output signals respectively.

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Electrical resistivity tomography survey for prediction of anomaly in mechanized tunneling

  • Lee, Kang-Hyun;Park, Jin-Ho;Park, Jeongjun;Lee, In-Mo;Lee, Seok-Won
    • Geomechanics and Engineering
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    • v.19 no.1
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    • pp.93-104
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    • 2019
  • Anomalies and/or fractured grounds not detected by the surface geophysical and geological survey performed during design stage may cause significant problems during tunnel excavation. Many studies on prediction methods of the ground condition ahead of the tunnel face have been conducted and applied in tunneling construction sites, such as tunnel seismic profiling and probe drilling. However, most such applications have focused on the drill and blast tunneling method. Few studies have been conducted for mechanized tunneling because of the limitation in the available space to perform prediction tests. This study aims to predict the ground condition ahead of the tunnel face in TBM tunneling by using an electrical resistivity tomography survey. It compared the characteristics of each electrode array and performed an investigation on in-situ tunnel boring machine TBM construction site environments. Numerical simulations for each electrode array were performed, to determine the proper electrode array to predict anomalies ahead of the tunnel face. The results showed that the modified dipole-dipole array is, compared to other arrays, the best for predicting the location and condition of an anomaly. As the borehole becomes longer, the measured data increase accordingly. Therefore, longer boreholes allow a more accurate prediction of the location and status of anomalies and complex grounds.

Stress-Pore Pressure Coupled Finite Element Modeling of NATM Tunneling (NATM 터널의 응력-간극수압 연계 유한요소모델링)

  • Yoo, Chung-Sik;Kim, Sun-Bin
    • Journal of the Korean Geotechnical Society
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    • v.22 no.10
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    • pp.5-20
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    • 2006
  • This paper concerns the finite element (FE) modeling approach for NATM tunneling in water bearing ground within the framework of stress-pore pressure coupled analysis. Fundamental interaction mechanism of ground and groundwater lowering was first examined and a number of influencing factors on the results of coupled FE analysis were identified. A parametric study was then conducted on the influencing factors such as soil-water characteristics, location of hydraulic boundary conditions, the way of modeling drainage flow, among others. The results indicate that the soil-water characteristics play the most important role in the tunneling-induced settlement characteristics. Based on the results, modeling guidelines were suggested for stress-pore pressure coupled finite element modeling of NATM tunneling.

A CASE STUDY OF FEM ANALYSIS ON GROUND REINFORCEMENT USING HORIZONTAL JET GROUT ROOFING IN SOFT GROUND TUNNELING (연약 지층 터널의 보강공법에 관한 FEM 해석 사례연구)

  • 김주봉;문상조
    • Proceedings of the Korean Geotechical Society Conference
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    • 1993.10a
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    • pp.51-56
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    • 1993
  • This paper presents the FEM anlysis results performed to assess the applicability of Horizontal Jet Grout Roofing, and of ground improvement methods for tunneling in soft ground. Horizontal Jet Grount Roofing Method is applicable to ensure the stability of tunnel face in non-cemeted alluvial strata under high ground water pressure. For applying this method, to ensure the reliability, the Horizontel Jet Grout Roofing should be double lined with pre-grouting to reduce the water inflow during the jet grouting.

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A Study on the Operation Development Method through the Application Result TBM Tunneling in the Bard Rock (암반터널에서의 TBM 공법 적용 사례 분석을 통한 운영 개선 방안)

  • Song, Young-Sun;Choi, Jae-Jin;Park, Hong-Tae
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.4
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    • pp.1050-1058
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    • 2008
  • The application of TBM tunneling has been progressively increased since the first entrance into Korea in 1985. In order to an apprehension and operation development of TBM method which has excellent boring in hard rock tunnel, this study has analyzed mutual relation of lose time and TBM boring from actual construction result TBM tunneling. This study compared an analyzed result with TBM tunnelling construction results of Korea, America, Japan, analyzed a primary factor of TBM boring effect and suggested operation development method from the analyzed results. accordingly this study can be used an index when similar construction apply TBM method to planning steps.

Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cells with Modulated Tunneling Oxide

  • Lee, Sang-Youl;Yang, Seung-Dong;Yun, Ho-Jin;Jeong, Kwang-Seok;Kim, Yu-Mi;Kim, Seong-Hyeon;Lee, Hi-Deok;Lee, Ga-Won;Oh, Jae-Sub
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.5
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    • pp.250-253
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    • 2013
  • In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

The suggestion of tunneling information and detail requirements for EPB shield machine design (토압식 쉴드TBM 장비설계를 위한 설계항목과 세부 요구사양의 구성에 관한 제안)

  • Kim, Ki-Hwan;Kim, Hyouk;Kim, Seong-Cheol;Kang, Si-On;Mun, Cheol-Hwa
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.22 no.6
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    • pp.611-622
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    • 2020
  • Recently, tunneling projects using shield TBM are increasing in Korea, but the information of client for machine design and manufacturing considering the characteristics of the tunneling phase is not formal, and it is difficult to optimized machine for suitable tunneling works. This paper suggest as for reference the required terms that can be used in Korea on the design items and detailed requirements for ordering of EPB shield TBM based on overseas case study. It would be hope that the TBM user can request the overall tunneling plan and required machine specification when ordering TBM, and the TBM supplier can design and manufacturing that is clear condition and suitable machine for the successful project, so that there are no residential civil complaints and for safe tunneling as well, shield TBM tunneling method will be activated.