• 제목/요약/키워드: triode

검색결과 94건 처리시간 0.026초

고전압 Nano-second펄스 전자총에 관한 연구 (Study on HV Nano-second Pulse Electron Gun System)

  • 손윤규;박성주;장성덕;오종석;조무현;남궁원
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1391-1393
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    • 1995
  • An electron gun system for the Pohang Light Source has been installed and operated successfully. The basic design parameters are acceleration voltage of 80 kV, maximum peak emission current of 5 A, minimum pulse width of 1 ns, and maximum repetition rate of 100 Hz. The gun has a triode structure and is composed of a cathode, a focusing electrode(Wehnelt), and an anode. To sustain a $5{\times}10^{-9}$Torr vacuum, a $230{\ell}/s$ Ion pump has been adopted. We adopted a control and monitoring system based on the fiber-optic technology. In this article, we present the structure and operation principle of the system with special interest on the nanosecond pulser, remote control and monitoring system.

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표면 미세 가공된 측면형 전계 방출 소자를 이용한 초소형 진공 센서의 제작 (Fabrication of Micro-Vacuum Sensor using Surface-Macromachined Lateral-type Field Emitter Device)

  • 박흥우;주병권;이윤희;박정호;오명환
    • 센서학회지
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    • 제9권3호
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    • pp.182-189
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    • 2000
  • 미소 공간 내의 진공도를 측정하기 위하여 마이크로 진공 센서를 제작하였다. 동작 원리로서 전계 방출 전류가 진공도에 의존한다는 점을 이용하였고, 이를 위해 측면형 실리콘 전계 방출 소자를 제작하였다. 음극과 게이트, 그리고 양극을 분리하기 위하여 표면 미세가공을 이용하였으며, 제작된 소자는 $10^{-5}{\sim}10^{-8}\;Torr$ 범위의 진공도에서 $1.20{\sim}2.42\;{\mu}A$ 범위의 방출 전류 변화를 보였다.

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Analysis of a Spun-CNT Based X-ray Source

  • Kim, Hyun Suk;Castro, Edward Joseph D.;Hun, Choong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.639-639
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    • 2013
  • In this research we report the significant contribution of the as-spun multi-walled carbon nanotube (MWCNT) on the x-ray images formation using a low tube voltage x-ray source. The MWCNT, which was used for the fabrication of the spun CNT, was grown using a microwave plasma-enhanced chemical vapor deposition machine. Electrical-optics simulation software was utilized to determine the electron field emission trajectory of the triode-structure-as-spun CNT-based x-ray source. It was shown that a significant amount of converging electrons hit the target anode producing a clear x-ray image. These x-ray images where produced at a small amount of anode current of 0.67 mA at a tube voltage of 5 kV with the gate voltage of 0 V. Also, comparisons of the radiographs at various exposure times of the sample where analyzed with and without an x-ray dose filter. Results showed that spatially-resolved images were formed using the as-spun CNT at a low tube voltage with a $54-{\mu}m$ Al x-ray filter. This study can be used for low-voltage medical applications.

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Growth of carbon nanotubes on metal substrate for electronic devices

  • Ryu, Je-Hwang;Kim, Ki-Seo;Lee, Chang-Seok;Min, Kyung-Woo;Song, Na-Young;Jeung, Il-Ok;Manivannan, S.;Moon, Jong-Hyun;Park, Kyu-Chang;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1632-1635
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    • 2007
  • We developed a novel growth method of CNTs on metal substrate for device applications, deposited by a triode direct current plasma enhanced chemical vapor deposition (dc-PECVD). With resist-assisted patterning (RAP) method, we had grown CNTs on metal substrate, which were strongly bonded with metal substrate.

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직렬 복합 트랜지스터를 이용한 저전압 가변 트랜스컨덕터의 설계 (Design of Low Voltage Linear Tunable Transconductors using the Series Composite Transistor)

  • 윤창훈;유영규;최석우
    • 전자공학회논문지SC
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    • 제38권5호
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    • pp.52-58
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    • 2001
  • 본 논문에서는 직렬 복합 트랜지스터를 이용한 저전압 선형 가변 트랜스컨덕터를 설계하였다. 직렬 복합트랜지스터는 포화 영역에서 동작하는 트랜지스터와 선형 영역에서 동작하는 트랜지스터가 직렬 연결된 구조로 낮은 공급 전압에서도 넓은 입력 전압 범위를 갖는다. 설계된 트랜스컨덕터는 $0.25{\mu}m$ CMOS n-well 공정 파라미터를 이용하여 HSPICE로 시뮬레이션한 결과 차단주파수는 309MHz 이고, 입력 신호 주파수가 10MHz일 때 1.5VP-P의 차동 입력에 대해 1.1%이하의 THD 특성을 갖는다.

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Improved Field Emission by Liquid Elastomer Modification of Screen-Printed CNT Film Morphology

  • Lee, Hyeon-Jae;Lee, Yang-Doo;Cho, Woo-Sung;Kim, Jai-Kyeong;Lee, Yun-Hi;Hwang, Sung-Woo;Ju, Byeong-Kwon
    • Journal of Information Display
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    • 제7권2호
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    • pp.16-21
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    • 2006
  • The effect of improvement on the surface morphology of screen-printed carbon nanotube (CND) films was studied by using the optically clear poly-dimethylsiloxane (PDMS) elastomer for surface treatment. After the PDMS activation treatment was applied to the diode-type CNT cathode, the entangled carbon nanotube (CNT) bundles were broken up into individual free standing nanotubes to remarkably improve the field-emission characteristics over the as-deposited CNT film. Also, the cathode film morphology of a top gated triode-type structure can be treated by using the proposed surface treatment technique, which is a low-cost process, simple process. The relative uniform emission image showed high brightness with a high anode current. This result shows the possibility of using this technique for surface treatment of large-size field emission displays (FEDs) in the future.

VDP(Vapor Deposition Polymerization) 방법을 이용한 유기 게이트 절연막의 대한 연구 (Study on the Organic Gate Insulators Using VDP Method)

  • 표상우;심재훈;김정수;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.185-190
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    • 2003
  • In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

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Mesh-type PECVD를 이용한 DC-bias인가 및 수소가스 첨가에 따른 저수소화 비정질 실리콘 박막에 관한 연구 (The Properties of Low Hydrogen Content α-Si Thin Film Using DC-bias Enhanced or Addition of H2Gas in Mesh-type PECVD System)

  • 류세원;권도현;박성계;남승의;김형준
    • 한국재료학회지
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    • 제12권4호
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    • pp.235-239
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    • 2002
  • In this study mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that, a third electrode, a mesh, is inserted between the powered and the ground electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied bias. Applied DC-bia s enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom.

전자빔을 자체 집속하는 탄소나노튜브 삼전극 전계방출소자의 시뮬레이션 (Simulations Of a Self-focusing Carbon Nanotube Triode Field Emission Device)

  • 이태동;류성룡;변창우;김영길;고남제;천현태;박종원;고성우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.538-541
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    • 2002
  • 탄소나노튜브 (CNT)가 도포된 평면형 에미터와 원형 개구의 게이트 전극을 가지는 삼전극 전계방출 소자의 전계방출 특성을 시뮬레이션하였다. 체계적인 시뮬레이션을 위해 소자 내 전위의 공간적 분포 특정을 결정하는 전계형상인자 $\gamma$를 정의하고 이 값에 따른 전위분포의 특성과 방출 전자의 궤적을 계산하였다. 계산 결과$\gamma$ > 1 인 전압조건에서는 에미터의 가운데를 중심으로 강한 전자방출이 발생하고 전자빔이 구조의 축 방향으로 자체 집속됨을 알 수 있었다. 이렇게 되면 에미터와 게이트의 정렬이 전혀 필요하지 않게 되며 또한 별도의 전자집속회로 없이도 에미터와 양극에 있는 형광체가 1:1 로 대응하는 획기적인 디스플레이 구조를 가능하게 해 준다 적정 전압조건에서 CNT의 전계강화인자 $\beta$의 변화에 따른 총 전류를 계산한 결과,$\beta$ >3000인 CNT를 사용할 경우 실제 소자로서 구현이 가능함을 확인하였다.

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고분자막을 점착층으로 사용한 유기 박막 트랜지스터의 안정성 (Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film)

  • 형건우;표상우;김준호;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.61-62
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    • 2006
  • In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

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