Journal of the Institute of Electronics Engineers of Korea SC (전자공학회논문지SC)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of Low Voltage Linear Tunable Transconductors using the Series Composite Transistor

직렬 복합 트랜지스터를 이용한 저전압 가변 트랜스컨덕터의 설계

  • Yun, Chang-Hun (Department of Information and Communications Engineering, Woosuk University) ;
  • Yu, Young-Gyu (PLANET) ;
  • Choi, Seok-Woo (Electrical Circuits and Systems Research Institute, Chonbuk National University)
  • 윤창훈 (우석대학교 이공대학 정보통신컴퓨터공학부) ;
  • 유영규 ((주) 플레넷) ;
  • 최석우 (전북대학교 부속 전기전자회로합성연구소)
  • Published : 2001.10.30
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Abstract

In this paper, the low voltage linear tunable transconductors using the series composite transistor are presented. Due to the series composite transistor operating in the saturation region and the triode region, the proposed circuits have wide input range at low supply voltage. The designed transconductors have been simulated by HSPICE using $0.25{\mu}m$ n-welll CMOS process. Simulation results show that the cutoff frequency is 309M Hz and the THD of less than 1.1% can be obtained for the differential input signal of up to l.5VP-P with the input signal frequency of l0MHz.

본 논문에서는 직렬 복합 트랜지스터를 이용한 저전압 선형 가변 트랜스컨덕터를 설계하였다. 직렬 복합트랜지스터는 포화 영역에서 동작하는 트랜지스터와 선형 영역에서 동작하는 트랜지스터가 직렬 연결된 구조로 낮은 공급 전압에서도 넓은 입력 전압 범위를 갖는다. 설계된 트랜스컨덕터는 $0.25{\mu}m$ CMOS n-well 공정 파라미터를 이용하여 HSPICE로 시뮬레이션한 결과 차단주파수는 309MHz 이고, 입력 신호 주파수가 10MHz일 때 1.5VP-P의 차동 입력에 대해 1.1%이하의 THD 특성을 갖는다.

Keywords

References

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