• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.12
• /
• pp.65-71
• /
• 1996

A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.2
• /
• pp.212-216
• /
• 2004

In this paper, we have fabricated a triode field emitter using carbon nanotubes (CNTs) directly grown by thermal chemical vapor deposition(CVD) method as an electron omission source. Vertically aligned CNTs have been grown in the center of the gate hole, to the size of 1.5 ${\mu}{\textrm}{m}$ in diameter, with help of a sacrificial layer of a type generally used in metal tip process. By the method of tilling the substrate, we made CNTs emitters both with and without SiO$_2$layer, a sidewall protector, deposited on sidewall of gate. After that we researched the electrical characteristics about two types of emitters. In effect, a sidewall protector can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without it at a gate voltage of 100 V.

• Journal of the Korean Professional Engineers Association
• /
• v.30 no.3
• /
• pp.43-51
• /
• 1997

Vacuum tubes are electron tubes in which the motion of electrons are utilized. There are many kinds of vacuum tubes, e.g. diode tubes, triode tubes, pentodes. muti-tubes and etc. Generally accommodated in glass tube, its eletrodes can be seen easily from outside and it easy to understand. In 1884 Edison discovered a current flow in the vacuum tube. He could not, however, explain this phenomenon. This is called Edison effect. In 1904 Fleming developed the backup for the practical diode theory. The most important milestone in this early history of electronics came in 1906 when De Forest put a third electrode (a grid) into the above, and thus invented the triode tube. It is 90 years since the triode was invented by De Forest (as of 1996) and 100 years (centennial also as of 1996) since the specific electric change e/mo$_0$ ≒ 1.7589 ${\times}$ 1011 (C/kg) was confirmed by the English scientist Thomson in 1896. On the occasion of the 90th and 100th anniversary of these inventions and discovery, E would like to describe the rise and 1111 of the vacuum tubes and the current status of these tubes.

• Journal of Electrical Engineering and information Science
• /
• v.2 no.5
• /
• pp.129-133
• /
• 1997

A circuit model for a field emission triode has been proposed. The model parameters have been extracted from he fabricated silicon tip array and verified by comparing with the results simulated by circuit simulator(SPICE). The cut-off frequency can be calculated from the parametric capacitance and the transconductance values extracted from measurements. For the field emission triode, the capacitance of 3.45fF/tip and the transconductance of 0.94nS/tip have been measured under the emission current of 4.1nA/tip. From these values, the cut-off frequency is predicted to be 43 kHz but th measured one came out to be 6 kHz. because o the parasitic capacitance components.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.194-197
• /
• 2003

The actively addressable carbon nanotube (CNT) emitters have been studied for stable and low-voltage driving field emission display (FED). The a-Si TFT and screen-printed CNT emitters were successfully integrated to fabricate the diode type active-matrix cathode and FED panel. Also, we propose a new FED architecture based on the actively controlled triode CNT emitters showing the properties of ideal triode type cathode with electron beam focusing effect.

• Korean Journal of Materials Research
• /
• v.17 no.3
• /
• pp.173-178
• /
• 2007

Carbon nanotube cathodes(CNT cathodes) with a trench structure similar to gated structure of triode-type cathode were fabricated by a screen printing method using multi-walled carbon nanotubes. The effects of surface treatments on CNT cathodes were investigated for high efficiency field emission displays(FEDs). A liquid method easily removed the organic residue and protruded the CNTs. Field emission properties were measured by using a diode-type mode. The liquid method produced a turn-on field of $1.4V/{\mu}m$. The emission current density was measured about $3.1mA/cm^{2}$ at the electric field of $3V/{\mu}m$. The liquid method showed a high potential applicable to the surface treatment for triode-type FEDs.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.38-42
• /
• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.06a
• /
• pp.82-83
• /
• 1996

• Journal of Information Display
• /
• v.6 no.2
• /
• pp.19-24
• /
• 2005

The density controlled carbon nanotubes (CNTs) are grown on the iron acetate nanoparticles by using the freeze-dry method. The iron-acetate [Fe(II)$(CH_3COO)_2$] solution is used to prepare the catalytic iron nanoparticles. The density of CNTs is controlled in order to enhance the field emission process. Furthermore, the patterning of the iron nanoparticle catalyst-layer for the fabrication of electronic devices is simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to form the electron emitter with under-gate type triode structure.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.456-458
• /
• 2004

We proposed a novel triode-type carbon nanotube field emitter arrays in which extracted gate is surrounded by CNT emitters. We carried out 3-dimensional numerical calculations of electrostatic potential for the proposed CNT-FEAs using the finite element method and compared the results with those obtained from the structure of conventional CNT-FEAs. It was found that the proposed structure could reduce the turn-on voltage for electron emission and improve beam focusing.