Journal of Korean Vacuum Science & Technology
- Volume 3 Issue 1
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- Pages.38-42
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- 1999
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- 1226-6167(pISSN)
Electrical characteristics of lateral poly0silicon field emission triode using LOCOS process
- Lee, Jae-Hoon (School of Electronic and Electrical Engineering) ;
- Lee, Myoung-Bok (School of Electronic and Electrical Engineering) ;
- Park, Dong-Il (School of Electronic and Electrical Engineering) ;
- Ham, Sung-Ho (Sensor Technology Research Center, Kyungpook National University) ;
- Lee, Jong-Hyun (School of Electronic and Electrical Engineering) ;
- Lee, Jung-Hee (School of Electronic and Electrical Engineering)
- Published : 1999.04.01
Abstract
Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92
Keywords
- LOCOS(local oxidation of polysilicon);
- low turn-on anode voltage;
- large transconductance;
- microwave device;
- lateral type FED(field emission display)