• Journal of Information Display
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• 제2권3호
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• pp.60-65
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• 2001

Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.